• Journal of the Korean Society for Heat Treatment
• /
• v.4 no.1
• /
• pp.19-29
• /
• 1991

This study was to investigate the influence of the substrate hardness on the hardness and adhesion of TiN thin film deposited by R.F. PACVD. Although the substrate hardness changed, chemical composition, stoichiometry and structure of TiN thin film did not change. ISE index was 1.96-1.99 for the substrate and was 1.57-1.79 for TiN thin film. And ISE index of TiN thin film was inverse proportion to the substrate hardness. When the substrate hardness was low, TiN thin film had many cracks around the indentation. But as the substrate hardness increased, TiN thin film had a few cracks and the deformation was limited within indentation. In having measured the adhesion of TiN thin film by SAT, the critical load (Lc) generally increased as the substrate hardness decreased.

• Bulletin of the Korean Chemical Society
• /
• v.22 no.11
• /
• pp.1183-1191
• /
• 2001

The metallorganic chemical vapor deposition (MOCVD) method has been used to prepare TiO2 thin films for the degradation of hazardous organic compounds, such as 2-chlorophenol (2-CP). The effect of supporting materials and metal doping on the photocatalytic activity of TiO2 thin films also has been studied. TiO2 thin films were coated onto various supporting materials, including stainless steel cloth(SS), quartz glass tube (QGT), and silica gel (SG). Transition metals, such as Pd(II), Pt(IV), Nd(III) and Fe(III), were doped onto TiO2 thin film. The results indicate that Nd(Ⅲ) doping improves the photodegradation of 2-CP. Among all supporting materials studied, SS(37 ${\mu}m)$ appears to be the best support. An optimal amount of doping material at 1.0 percent (w/w) of TiO2-substrate thin film gives the best photodegration of 2-CP.

• Journal of Integrative Natural Science
• /
• v.11 no.4
• /
• pp.209-211
• /
• 2018

A zinc oxide thin film doped with aluminum was deposited by RF sputtering. The deposition temperature of the sputter chamber was kept constant at $350^{\circ}C$, the power supplied to the chamber was 75 W, the oxygen flow rate was changed to 10 sccm and 20 sccm, and the thin film deposition time was changed to 120 and 180 minutes. The structures of the deposited zinc oxide thin films were analyzed by van der Waals method using an X-ray diffractometer. As a result of X-ray diffraction, the amount of oxygen supplied to the zinc oxide thin film increased, and the surface growth of the (002), (400), (110), and (103) planes showed a change with increasing deposition time. Moreover, as the amount of oxygen supplied to the zinc oxide thin film increased, their shape was observed to be coarse, and the thin film' s particles shape was correlated with the oxygen chemical defect introduced.

• Korean Journal of Metals and Materials
• /
• v.49 no.2
• /
• pp.192-196
• /
• 2011

The multi-layered thin film with an ITO/Ag/ITO structure was produced on PET by using magnetron reactive sputtering method. First, 30 nm of ITO thin film was coated on PET by using normal temperature process. Then 20-52 nm of the Ag thin film was coated. Lastly, 30 nm of ITO thin film was coated on Ag layer. The sample of the 20 nm Ag thin film showed more than 70% transmission and a $2.7{\Omega}/{\Box}$ sheet resistance. When compared to the existing single-layered transparent conducting thin film, multi-layered film was found to be superior with about $5{\Omega}/{\Box}$ less sheet resistance. However, since the Ag layer became thinner, the band gap energy needs to be increased to more than 3.5 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.34 no.1
• /
• pp.33-38
• /
• 2021

Using facing target magnetron sputtering (FTMS) with a graphite target source, carbon nitride thin films were deposited on silicon and glass substrates at different substrate temperatures to confirm the tribological, electrical, and structural properties of thin films. The substrate temperatures were room temperature, 150℃, and 300℃. The tribology and electrical properties of the carbon nitride thin films were measured as the substrate temperature increased, and a study on the relation between these results and structural properties was conducted. The results show that the increase in the substrate temperature during the fabrication of the carbon nitride thin films increased the hardness and elastic modulus values, the critical load value was increased, and the residual stress value was reduced. Moreover, the increase in the substrate temperature during thin-film deposition was attributed to the improvement in the electrical properties of carbon nitride thin film.

• Structural Engineering and Mechanics
• /
• v.84 no.4
• /
• pp.453-464
• /
• 2022

Thin plates are the most common spatially stressed members in engineering structures that bear out-of-plane loads. Therefore, it is of great significance to study the deformation performance characteristics of thin plates for structural design. By constructing 12 basic displacement and deformation basis vectors of the four-node square thin plate element, a deformation decomposition method based on the complete orthogonal mechanical basis matrix is proposed in this paper. Based on the deformation decomposition method, the deformation properties of the thin plate can be quantitatively analyzed, and the areas dominated by each basic deformation can be visualized. In addition, the method can not only obtain more deformation information of the structure, but also identify macroscopic basic deformations, such as bending, shear and warping deformations. Finally, the deformation properties of the bidirectional thin plates with different sizes of central holes are analyzed, and the changing rules are obtained.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2007.02a
• /
• pp.114-114
• /
• 2007

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.06a
• /
• pp.93-93
• /
• 1998

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.08a
• /
• pp.409-409
• /
• 2009

• Applied Science and Convergence Technology
• /
• v.27 no.1
• /
• pp.1-4
• /
• 2018

A sputtering-assisted magnetic field system was successfully developed for depositing crystalline Cu thin films at room temperature. This system employs a plasma source and an ion-beam gun with two magnetic field generators, which is covered with sputtering target and the ion-beam gun, simultaneously serving as sputtering plasma and a magnetic field generator. The formation of crystalline Cu thin films at room temperature was dominated by magnetic fields, which was revealed by preliminary experiments. This system can be employed for producing crystalline metal thin films at room temperature.