• Journal of the Korean Ceramic Society
• /
• v.27 no.3
• /
• pp.337-344
• /
• 1990

As a function of sintering temperature and time, the electrical properties of ruthenium based thick film resistors were investigated with microstructure. The variatio of resistivity and TCR(temperature coefficient of resistance)trends of sintered speciman at various sintering temperature were different low resistivity paste(Du Pont 1721) from high one(Du Pont 1741). These phenomena are deeply relative to microstructure of sintered film. With increasing the sintering temperature for 1721 system, the electrical sheet resistivity decreased, but again gradually increased above 80$0^{\circ}C$. And TCR trends in 1721 system are all positive. On the other hand the electrical sheet resistivity of 1741 resistor system decreased with sintering temperature. And TCR trends variable according to sintering temperature. TCR of speciman sintered at $700^{\circ}C$ was negative value, and TCR of 80$0^{\circ}C$ sintered speciman coexisted negative and positive value. But in case of speciman sintered at 90$0^{\circ}C$, TCR was positive value. As results of this fact, it was well known that the charge carrier contributied to electrical conduction in 1741 resistor system varied with sintering temperature.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.3
• /
• pp.79-86
• /
• 1992

The cause of excess current noise which appears some times in RuO$_2$ thick film chip resistors and the process to reduce such noise are investigated. We observed that too large thermal expansion coefficients of resistor paste and electrode metal paste can induce the mechanical stress and microcracks in the contact region of the two sintered materials. Such microcracks result in the reduction of conduction paths in the sintered electrode and this provokes the increase of the resistance value and the current noise. Such excessive current noise induced by microcracks could be reduced or even eliminated by using an enlarged overcoat patterns in the plating process or by adding an additional annealing process before plating.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.11
• /
• pp.84-90
• /
• 1992

The dependence of electrical characteristics of RuO$_2$-based thick film resistors on the RuO$_2$ contents, glass composition variation and the firing temperatures was measured. The sheet resistance of resistors decreased as the contents of RuO$_2$ increased and at firing temperatures higher than C, the sheet resistance increased as the firing temperature increased. In case of using lead borosilicate glass-containing $Bi_{2}O_{3}$, the sheet resistance decreased as the contents of $Bi_{2}O_{3}$ increased. TCR changes from negative to positive values as RuO$_2$ contents increased and from positive to negative values as the firing temperature increased. TCR increased to positive values as $Bi_{2}O_{3}$ increased in the glass.

• Journal of the Korean Ceramic Society
• /
• v.31 no.12
• /
• pp.1529-1535
• /
• 1994

Electrical conduction mechanisms of RuO2-based thick film resistors were investigated with frequency depandence on AC conductivity. Electrical conduction mechanisms of lower resistivity system (100{{{{ OMEGA }}/sq) sintered at 600~90$0^{\circ}C$ were all metallic conduction mechanism. In case of higher resistivity (10K{{{{ OMEGA }}/sq) system, the electrical conduction mechanisms were very depenent on sintering temperature. When sintering temperature was $600^{\circ}C$, the electrical conduction mechamism was ionic, and as increasing the sintering temperature, the electrical conduction mechanism was changed from ionic to hopping conduction mechanism.

• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.4
• /
• pp.33-37
• /
• 2012

Microstructure developments of $RuO_2$ based thick film resistors during firing as a function of glass viscosity were analytically quantified and its effect on the electrical property was investigated. The microstructure development was retarded as the viscosity of glass was increased. It was found that the viscosity range for each stage of microstructure development are as follows ; $7500-10^5Pa{\cdot}s$ for the glass sintering, $2000-7500Pa{\cdot}s$ for the glass island formation, $700-2000Pa{\cdot}s$ for the glass spreading, and $50-700Pa{\cdot}s$ for the infiltration. The sheet resistivity decreased as the viscosity of glass in the resistor film increased due to the higher chance of sintering for the conductive particles with the higher viscosity of the glass.

• Korean Journal of Materials Research
• /
• v.2 no.1
• /
• pp.58-64
• /
• 1992

TCR modifying oxides which have negative TCR were added to the $\textrm{RuO}_2$ thick film resistors and how they affect the TCR and resistivity of the systems were investigated. Two types of resistor systems whose ratio of $\textrm{RuO}_2$ to glass were 20/80 and 12/88 were used as standard resistors. It was observed that the modifiers did not always lower the TCR of the resistors and the direction of the TCR change were different from system to system. It was confirmed, however, that the feasibility of optimization of TCR of the resistors. When more than two TCR modifiers were added simultaneously there was no interaction between them. The resultant TCR of the resistor wart just sum of the effects from individual modifier. It was found to be desirable that the amount of addition of the TCR modifiers should be less than 2 to 3 percent.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2001.04a
• /
• pp.57-65
• /
• 2001

Economical consumption of energy, longer life of lamps, higher lighting comfort and new aesthetic of illumination is subject of numerous research and development works. The halogen lamps are an example of positive solution some of above mentioned problems. The electronic transformers are more frequent used for their supply. In comparison with conventional transformers they have less weight, less volume and 60% less power tosses. Their advantages are particular visible, when the hybrid technique is applied. The paper presents the results of engineering research and development works carried out ill Private Institute of Electronic Engineering, in R. & D. Center for Hybrid Microelectronics and Resistors and in Technical School of Communications in Krakow, in the field of the design and exploitation tests of hybrid converters 220V AC /12V DC (electronic transformers) and electronic ballasts destined for the supply of halogen lamps 20W to 150W and fluorescent lamps respectively. To perform the converters, thick film technology and surface mount technology were used. For the protection of converter electronic circuit the thick film temperature sensor and transistors were applied. Moreover the paper presents the base application circuits of elaborated converters, their technical parameters and exploitation results. The development perspectives of hybrid domain of hybrid circuits are also discussed.

• Journal of the Korean Ceramic Society
• /
• v.47 no.5
• /
• pp.467-473
• /
• 2010

The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass system was chosen as a sintering aid of $RuO_2$. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. $RuO_2$ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C$/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using $RuO_2$-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%$B_2O_3$-7%$Al_2O_3$-15%$SiO_2$ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of $10.6\Omega/\spuare$ and the temperature coefficient of resistance of 702ppm/$^{\circ}C$ after sintering at $850^{\circ}C$.

• Proceedings of the KIEE Conference
• /
• 1990.07a
• /
• pp.215-220
• /
• 1990

A.C. impedance properties of $RuO_2$ based thick film resistors which having different resistivity value (DuPont 1721 : $100{\Omega}$/ sq., 1741 : $10K{\Omega}$/sq.) were investigated using by impedance analyzer. In case of lower resistivity 1721 system, the complex impedance was composed nearly R component for all speciman sintered at above $600^{\circ}C$, and the frequency dependancy on impedance was not affected very much up to 5MHz and again gradually increase with increasing the frequency. In case of higher resistivity 1741 resistor system, impedance properties were very depandant on sintering temperature. When sintering temperature was $600^{\circ}C$, the complex impedance plot shows a vertical line, which correspond to lone capacitance equivalant circuit, and the impedance linearly decreased with increasing frequency. In case of speciman sintered at $700-900^{\circ}C$, the complex impedance plot shows semi-circular are correspond to a lumped RC combination, and the impedance shows constant value to 5MHz, again decreased with increasing frequency. But the complex impedance behavior of speciman sintered at $1000^{\circ}C$ was shows the equivalent circuit correspont to parallel combined LCR component, and the impedance was not varied with frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.348-348
• /
• 2008

In recent, the concept of system-on-package (SOP) for highly integrated multifunctional systems has been paid attention to for the miniaturization and high frequency of electronic devices. In order to realize SOP, co-integration of passive devices, such as capacitors, resistors and inductors, and active devices should be achieved. If ceramic thick films can be grown at room temperature, we expect to be able to overcome many problems in conventional fabrication processes. So, we focused on the aerosol deposition method (ADM) as room temperature fabrication technology. ADM is a novel ceramic coating method based on the Room Temperature Impact Consolidation (RTIC) phenomena. This method has a wide range potential for fabrication of co-integration of passive and active devices. In this paper, I will present the future potential of ADM introducing various ceramic dielectric thick films for the integration of electronic ceramics.