• Journal of the Korean Physical Society
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• 제80권
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• pp.415-419
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• 2022

Ultrathin Pt less than 10 nm thick is widely used in spintronic devices including spin Hall current. The transport property and underlying physics however have not been much studied for ultrathin films. Classical theories are analyzed to find that they cannot be applied to ultrathin films. Quantum mechanical size effect theory was applied to analyze Pt and Pt/CoFeB film sets. The quantum mechanical theory explained the conductance variation for both films along with roughness remarkably well.

• 한국전산구조공학회논문집
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• 제30권2호
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• pp.111-117
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• 2017

본 논문에서는 유한요소 자유진동해석을 수행하여 박판 보에서의 국소변형효과를 조사하였다. 자유진동해석은 단일셀 및 다중셀 박스보에 대해 수행하였으며, 풍력발전 블레이드를 가장 단순하게 모사할 수 있는 단일셀 박스보를 먼저 해석하였다. 쉘요소 해석결과를 보요소 해석결과와 비교하여 보았을 때 박스 보의 박판 두께가 정확도에 매우 중요한 역할을 함을 확인하였다. 두께가 얇은 경우에는 쉘의 국소변형(또는 쉘 모드)가 주요하게 나타난 반면에 두꺼울 경우에는 전단변형의 효과가 크게 나타남을 알 수 있었다. 목이 있는 단일셀 박스보에서의 국소변형은 목 주위에 집중되어 나타남을 확인하였다. 마지막으로 실제 블레이드와 유사한 다중셀 테이퍼 보의 주파수 및 모드형상을 분석하였다. 보 요소 해석결과는 쉘 요소 결과와 비교하여 약 5~7% 주파수 차이를 보였으며, 이는 보요소가 국소변형을 제대로 모사하지 못하기 때문이다. 특히 래그모드(lagwise mode)의 경우에는 단면의 분할 정도의 영향보다 국소변형의 효과가 매우 크다는 것을 알 수 있었다.

• 전기의세계
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• 제17권4호
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• pp.13-17
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• 1968

Up to the present time, laminated insulators have been used for the insulation of electrical apparatus. The reason to use laminated insulators is based on the fact that electrical break-down voltage depends on the weak spot theory. If thin insulators are laminated, the weak spot existence probability across the electrodes decreases according to the number of lamination. In this test, the effect of the number of lamination and the thickness of each lamination sheets on their break-down voltage are discussed. The results taken as a whole indicate; (1) The break-down voltage of laminated insulators composed of thin sheets are higher than those of thick sheets, however, the voltage may become the same beyond any definite thickness of laminated insulators. (2) When the lamination sheets becomes thinner, the variation of break-down voltage is great according to the number of lamination sheets. (3) It may by effective to use laminated insulators even when the insulators are aparted from the electrodes.

• 한국세라믹학회지
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• 제34권3호
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• pp.241-248
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• 1997

RuO2 박막은 SiO2(1000$\AA$)Si와 MgO(100) 단결정 위에 낮은 증착온도에서 hot-wall MOCVD법으로 증착시켰다. 그리고 박막의 특성에 미치는 공정변수의 영향을 고찰하였다. 25$0^{\circ}C$의 비교적 낮은 온도에서부터 RuO2의 단일상을 얻었으며 SiO2(1000$\AA$)Si위에 증착된 RuO2박막은 무질서한 배향을 보이는 반면 MgO(100)단결정 위에 증착시킨 RuO2박막의 경우에는 (hk0) 배향성을 보이는 것을 관찰하였다. 증착온도가 증가함에 따라 RuO2박막의 결정성은 증가하였고 전기적 비저항은 감소하였다. O2유량이 감소함에 따라 RuO2박막의 비저항은 감소하였으며, 증착온도 35$0^{\circ}C$, O2 유량 50sccm에서 증착된 두께 2600$\AA$-RuO2박막의 비저항은 52.7$\mu$$\Omega$-cm이었으며 이는 고 유전물질의 하부전극으로 이용하기에 적합하다.

• 한국표면공학회지
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• 제51권4호
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• pp.243-248
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• 2018

All solid state thin film batteries with two types of cell structure, Pt / $LiCoO_2$ / LiPON / Cu and Pt / $LiCoO_2$ / LiPON / $LiCoO_2$ / Cu, are prepared and their electrochemical performances are investigated to evaluate the effect of $LiCoO_2$ interlayer at the interface of LiPON / Cu. The crystallinity of the deposited $LiCoO_2$ thin films is confirmed by XRD and Raman analysis. The crystalline $LiCoO_2$ cathode thin film is obtained and $LiCoO_2$ as the interlayer appears to be amorphous. The surface morphology of Cu current collector after cycling of the batteries is observed by AFM. The presence of a 10 nm-thick layer of $LiCoO_2$ at the interface of LiPON / Cu enhances the interfacial adhesion and reduces the interfacial resistance. As a result, Li plating / stripping at the interface of LiPON / Cu during charge/discharge reaction takes place more uniformly on Cu current collector, while without the interlayer of $LiCoO_2$ at the interface of LiPON / Cu, the Li plating / stripping is localized on current collector. The thin film batteries with the interlayer of $LiCoO_2$ at the interface of LiPON / Cu exhibits enhanced initial coulombic efficiency, reversible capacity and cycling stability. The thickness of the anode current collector Cu also appears to be crucial for electrochemical performances of all solid state thin film batteries.

• International Journal of Automotive Technology
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• 제8권2호
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• pp.193-201
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• 2007

The present paper deals with the application of the explicit finite element code, PAM-CRASH, to simulate the crash behavior of steel thin-walled tubes with various cross-sections subjected to axial loading. An isotropic elastic, linear strain-hardening material model was used in the finite element analysis and the strain-rate sensitivity of mild steel was modeled by using the Cowper-Symonds constitutive equation with modified coefficients. The modified coefficients were applied in numerical collapse simulations of 11 types of thin-walled polygon tubes: 7 convex polygon tubes and 4 concave polygon tubes. The results show that the thin hexagonal tube and the thick octagonal tube showed relatively good performance within the convex polygon tubes. The crush strengths of the hexagonal and octagonal tubes increased by about 20% and 25% from the crush strength of the square tube, respectively. Among the concave tubes, the I-type tube showed the best performance. Its crush strength was about 50% higher than the crush strength of the square tube.

• 열처리공학회지
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• 제30권1호
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• pp.1-5
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• 2017

A 100 nm thick $SnO_2$ thin films were prepared by radio frequency magnetron sputtering on glass substrates and then annealed in nitrogen atmosphere for 30 minutes at 100, 200, and $300^{\circ}C$, respectively. While the visible light transmittance and electrical resistivity of as deposited $SnO_2$ films were 81.8% and $1.5{\times}10^{-2}{\Omega}cm$, respectively, the films annealed at $200^{\circ}C$ show the increased optical transmittance of 82.8% and the electrical resistivity also decreased as low as $4.3{\times}10^{-3}{\Omega}cm$. From the observed results, it is concluded that post-deposition annealing in nitrogen atmosphere at $200^{\circ}C$ is an attractive condition to optimize the optical and electrical properties of $SnO_2$ thin films for the various display device applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.243.2-243.2
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• 2016

Tungsten (W) is recently gaining attention as a potential candidate to replace Cu in semiconductor metallization due to its expected improvement in material reliability and reduced resistivity size effect. In this study, the impact of electron scattering at grain boundaries in a polycrystalline W thin film was investigated. Two nominally 300 nm-thick films, a (110)-oriented single crystal film and a (110)-textured polycrystalline W film, were prepared onto (11-20) Al2O3 substrate and thermally oxidized Si substrate, respectively in identical fabrication conditions. The lateral grain size for the polycrystalline film was determined to be $119{\pm}7nm$ by TEM-based orientation mapping technique. The film thickness was chosen to significantly exceed the electron mean free path in W (16.1 and 77.7 nm at 293 and 4.2 K, respectively), which allows the impact of surface scattering on film resistivity to be negligible. Then, the difference in the resistivity of the two films can be attributed to grain boundary scattering. quantitative analyses were performed by employing the Mayadas-Shatzkes (MS) model, where the grain boundary reflection coefficient was determined to be $0.42{\pm}0.02$ and $0.40{\pm}0.02$ at 293 K and 4.2 K, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.114-115
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• 2007

In this paper, it was demonstrated that organic thin-film transistors (OTFTs) were fabricated with the organic passivation layer by vapor deposition polymerization (VDP) processing, In order to form polymeric film as an passivation layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing, Field effect mobility, threshold voltage, and on-off current ratio with 450-nm-thick organic passivation layer were about $0.21\;cm^2/Vs$, IV, and $1\;{\times}\;10^5$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.305-309
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• 2002

We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi$\sub$4-x/La$\sub$x/Ti$_3$O$\sub$12/ (BLT) ferroelectric thin film and SiO$_2$/Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$-8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$. Whereas, for the films pre-baked above 500$^{\circ}C$, the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of ${\pm}$8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure.