• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.58.2-58
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• 2000

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.520-527
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• 1999

As a new approache(extrusion-sintering process) to fabricate the thermoelectric materials, it has been at tempted to extrude and sinter the powders simultaneously. It was possible to produce the highly dense <$(Bi,Sb)_2(Te,Se)_3$-based thermoelectrics with sound surface appearances and microstructures by adjusting the process variables. For the p-type materials, the Seeback coefficient was increased with the amount of Te dopants, and the thermoelectric figure of merit appeared to be $2.5\times10^{-3}/K$ at room temperature when doped with 3 at % Te. The n-type specimen doped with 0.16 mol% $SbI_3$ showed the thermoelectric figure of merit of $1.8\times10^{-3}/K$. In both p-type an 우-type materials, the carrier mobility an the thermoelectric figure of merit parallel to the extrusion direction were higher than those perpendicular to it.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.363-369
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• 1994

Bimuth telluride base thermoelectrics are prepared by AC current applied hot pressing method. It is possible to minimize the defects arising from the vaporization of Te, thanks to the very short processing time compared to the single crystal growing method. The optimum conditions for the AC applied hot pressing of 95 mol% $Bi_2Te_3-5 mol% Bi_2Se_3$ thermoelectrics are sintering at $400^{\circ}C$, for 2 minutes, under 1500 kgf/$\textrm{cm}^2$, with the particle size of $125 to 250 {\mu}m$, range of powder. The resultant Z value (figure of merit) was $2.2{\times}10^{-3}/K$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.3.1-3.1
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• 2009

Nanotechnology has beenrapidly evolved from passive nanostructures where nanostructures with steadystructures and functions often used as parts of a product to activenanostructures which change their properties during use. Startingaround 2010, it is anticipated that researchers will cultivate expertise withsystems of nanostructures, directing large numbers of intricate components tospecified needs. One dimensional (1-D) nanostructures suchas nanowires and nanotubes are extremely attractive building blocks for nextgeneration devices because of their high surface to volume ratio and uniquesize dependent properties. In addition, their extremely high aspectratio offers researchers the potentials to build axial or radialheterostructures to integrate multiple functionality from intrinsic propertiesof the material or through interfacial phenomena. Spatialmanipulation and the ability to assemble and position nanostuructures in acontrolled matter so they are registered to define spaces is also a criticalstep toward scalable integration in high density nanodevices. In thispresentation, a generalized template directed electrodeposition with ancillaryassembly, contact will be presented to synthesize axial and radialheterostructures in cost-effective matter and these individual nanostructureswill be applied to spintronics, gas and biological sensors and thermoelectrics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.419-430
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• 2022

Defects in solids play a vital role on thermoelectric properties through the direct impacts of electronic band structure and electron/phonon transports, which can improve the electronic and thermal properties of a given thermoelectric semiconductor. Defects in semiconductors can be divided into four different types depending on their geometric dimensions, and thus understanding the effects on thermoelectric properties of each type is of a vital importance. This paper reviews the recent advances in the various thermoelectric semiconductors through defect engineering focusing on the charge carrier and phonon behaviors. First, we clarify and summarize each type of defects in thermoelectric semiconductors. Then, we review the recent achievements in thermoelectric properties by applying defect engineering when introducing defects into semiconductor lattices. This paper ends with a brief discussion on the challenges and future directions of defect engineering in the thermoelectric field.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.689-694
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• 2009

Layer-structured $Na_xCo_2O_4$ was synthesized from $Na_2CO_3\;and\;Co_3O_4$ powders. The chemical concentrations of Na and additive were controlled to enhance the thermoelectric properties over the temperature range from 400 K to 1,150 K. As a result, we obtained the maximum thermoelectric properties at a single phase region with Na content of x=1.5. When Na content was smaller than x=1.5, the thermoelectric properties was low due to formation of second phases of CoO and other oxides. Additionally, Mn was doped to improve thermoelectric properties by means of decreasing thermal conductivity. The results showed that the concentrations of both Na and Mn are all governing factors to determine the thermoelectric properties of $Na_xCo_2O_4$ system.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.678-683
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• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

• Nuclear Engineering and Technology
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• v.50 no.1
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• pp.151-158
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• 2018

The neutron powder diffractometer (NPD) is used to study a variety of technologically important and scientifically driven materials such as superconductors, multiferroics, catalysts, alloys, ceramics, cements, colossal magnetoresistance perovskites, magnets, thermoelectrics, zeolites, pharmaceuticals, etc. Monte Carlo-based codes are powerful tools to evaluate the neutronic behavior of the NPD. In the present study, MCNPX 2.6.0 and Vitess 3.3a codes were applied to simulate NPD facilities, which could be equipped with different optic devices such as pyrolytic graphite or neutron chopper. So, the Monte Carlo-based codes were used to simulate the NPD facility of the 5 MW Tehran Research Reactor. The simulation results were compared to the experimental data. The theoretical results showed good conformity to experimental data, which indicates acceptable performance of the Vitess 3.3a code in the neutron optic section of calculations. Another extracted result of this work shows that application of neutron chopper instead of monochromator could be efficient to keep neutron flux intensity higher than $10^6n/s/cm^2$ at sample position.

• Ceramist
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• v.22 no.2
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• pp.133-145
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• 2019

Thermoelectric energy conversion has attracted much attention because it can convert heat into electric power directly through solid state device and vice versa. Current research is aimed at increasing the thermoelectric figure of merit (ZT ) by improving the power factor and reducing the thermal conductivity. Although there have been significant progresses in increasing ZT of material systems composed of Bi, Te, Ge, Pb, and etc. over the last few decades, their relatively high cost, toxicity, and the scarcity have hindered further development of thermoelectrics to expand practical applications. In this paper, we review the current status of research in the fields of nanostructured thermoelectric materials with eco-friendly and low cost elements, such as skutterudites and oxides, for mid-high temperature applications, highlighting the strategies to improve thermoelectric performance.

• Korean Journal of Metals and Materials
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• v.47 no.4
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• pp.248-255
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• 2009

A micro thermoelectric device was processed by electroplating the n-type Bi-Te nanowires and ptype Sb-Te nanowires into an alumina template with 200 nm pores. Power generation characteristics of the micro devices composed of the Bi-Te nanowires, the Sb-Te nanowires, and both the Bi-Te and the Sb-Te nanowires were analyzed with applying a temperature difference of $40^{\circ}C$ across the devices along the thickness direction. The n-type Bi-Te and the p-type Sb-Te nanowire devices exhibited thermoelectric power outputs of $3.8{\times}10^{-10}W$ and $4.8{\times}10^{-10}W$, respectively. The output power of the device composed of both the Bi-Te and the Sb-Te nanowires decreased to $1.4{\times}10^{-10}W$ due to a large electrical resistance of the Cu electrode connecting the Bi-Te nanowire array with the Sb-Te nanowire array.