• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.304.2-304.2
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• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• 마이크로전자및패키징학회지
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• 제26권4호
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• pp.149-156
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• 2019

5쌍의 Bi₂Te₃계 p-n 가압소결체 열전레그들로 구성되어 있으며 상하부 기판이 없고 내부는 polydimethylsiloxane (PDMS)로 충진되어 있는 신축열전모듈을 형성하고, 이의 신축특성과 발전특성을 분석하였다. 신축열전모듈에 변형률 0~0.1 범위의 신축변형 싸이클을 10회 인가하여도 모듈의 integrity가 잘 유지되었으며, 인장변형률이 0.2로 증가시 Cu 전극과 열전레그 사이의 접합부 파단에 의해 모듈이 open 되었다. 신축열전모듈은 열전레그 양단간의 온도차가 2.2 K일 때 4.6 mV의 open circuit 전압을 나타내었으며, 변형률 0~0.1 범위의 인장변형에 의한 open circuit 전압의 변화는 5% 미만이었다. 신축열전모듈은 0.1의 변형률로 인장된 상태에서 레그 양단간 온도차 2.2 K에 의해 18.5 ㎼의 최대발전출력을 나타내었다.

• 한국분말재료학회지
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• 제14권4호
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• pp.272-276
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• 2007

P-type thermoelectric material $Si_{0.8}Ge_{0.2}$ was sintered by Hot Press process (HP) and the effect of boron ($0.25{\sim}2$ at%) addition on the thermoelectric properties were reported. To enhance the thermoelectric performances, the $Si_{0.8}Ge_{0.2}$, alloys were fabricated by mechanical alloying (MA) and HP. The carrier of p-type SiGe alloy was controlled by B-doping. The effect of sintering condition and thermoelectric properties were investigated. B-doped SiGe alloys exhibited positive seebeck coefficient. The electrical conductivity and thermal conductivity were increased at the small amount of boron content ($0.25{\sim}0.5$ at%). However, they were decreased over 0.5 at% boron content. As a result, the small addition of boron improved the Z value. The Z value of 0.5 at% B doped $Si_{0.8}Ge_{0.2}$ B alloy was $0.9{\times}10{-4}/K$, the highest value among the prepared alloys.

• 한국산학기술학회논문지
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• 제18권2호
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• pp.478-483
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• 2017

본 논문에서는 소형 전자기기와 같은 발열부 온도 제어를 위해 압전 소자와 열전 소자를 이용하여 국소부 냉각 성능을 실험적으로 조사해 보았다. 실험은 열전 소자를 이용하여 실험 영역내에 냉각부를 형성하고, 압전 소자에 80Hz와 110Hz 의 인가주파수를 각각 적용하여, 압전 소자를 작동시켰을 때와 작동시키지 않았을 때 열전 소자에 의해 형성된 시험부의 냉각 영역에서 온도 분포를 측정하였다. 또한, 냉각 영역의 온도측정 결과를 토대로 압전 소자를 적용하였을 때와 적용하지 않았을 때 냉각 영역의 성능 계수를 계산하고, 가시화 장치를 구성한 후 시험부내에 냉각 영역의 열유동 현상도 확인해 보았다. 실험결과, 온도분포 측정 실험 결과와 성능 계수 계산 결과로 부터 압전 소자를 작동하지 않은 경우보다 압전 소자를 작동한 경우에서 냉각 성능이 개선되는 것을 확인할 수 있었다.. 또한, 가시화 결과를 토대로 열전 소자에 의해 형성된 냉각 영역에 압전 소자를 작동시켰을 경우에 냉각 영역의 국소부에 압전 소자에 의한 상하 진동의 강제 대류 현상이 발생하면서 냉각영역 전체에 고르게 분포하는 유동을 형성하고 냉각 성능이 개선되는 원인을 확인할 수 있었다.

• 한국표면공학회지
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• 제49권1호
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• 한국태양에너지학회 논문집
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• 제39권1호
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• pp.21-32
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• 2019

Solar hot water system produces hot water using solar energy. If it is not used effectively, overheating occurs during the summer. Therefore, a lot of research is being done to solve this. This study develops thermoelectric power module applicable to solar hot water system. A thermoelectric material can directly convert thermal energy into electrical energy without additional power generation devices. If there is a temperature difference between high and low temperature, it generate power by Seebeck effect. The thermoelectric module generates electricity using temperature differences through the heat exchange of hot and cold water. The water used for cooling is heated and stored as hot water as it passes through the module. It can prevent overheating of Solar hot water system while producing power. The thermoelectric module consists of one absorption and two radiation part. There path is designed in the form of a water jacket. As a result, a temperature of the absorption part was $134.2^{\circ}C$ and the radiation part was $48.6^{\circ}C$. The temperature difference between the absorption and radiation was $85.6^{\circ}C$. Also, The Thermoelectric module produced about 122 W of irradiation at $708W/m^2$. At this time, power generation efficiency was 2.62% and hot water conversion efficiency was 62.46%.

• 한국분말재료학회지
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• 제30권2호
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• pp.123-129
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• 2023

High-temperature and high-pressure post-processing applied to sintered thermoelectric materials can create nanoscale defects, thereby enhancing their thermoelectric performance. Here, we investigate the effect of hot isostatic pressing (HIP) as a post-processing treatment on the thermoelectric properties of p-type Bi_0.5Sb_1.5Te_3.0 compounds sintered via spark plasma sintering. The sample post-processed via HIP maintains its electronic transport properties despite the reduced microstructural texturing. Moreover, lattice thermal conductivity is significantly reduced owing to activated phonon scattering, which can be attributed to the nanoscale defects created during HIP, resulting in an ~18% increase in peak zT value, which reaches ~1.43 at 100℃. This study validates that HIP enhances the thermoelectric performance by controlling the thermal transport without having any detrimental effects on the electronic transport properties of thermoelectric materials.

• Carbon letters
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• 제19권
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• pp.107-111
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• 2016

• 한국재료학회지
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• 제14권1호
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• pp.41-45
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• 2004

P-type $Bi_{0.5}$$Sb_{1.5}$ $Te_3$ thin films were deposited by the flash evaporation technique, and their thermoelectric properties and electronic transport parameters were investigated. The effective mean free path model was adopted to examine the thickness effect on the thermoelectric properties. Annealing effects on the carrier concentration and mobility were also studied, and their variations were analyzed in conjunction with the antisite defects. Seebeck coefficient and electrical resistivity versus inverse thickness showed a linear relationship, and the effective mean free path was found to be 3150$\AA$. No phase transformation and composition change were observed after annealing treatment, but carrier mobility increased due to grain growth. Carrier concentration decreased considerably due to reduction of the antisite defects, so that electrical conductivity decreased and Seebeck coefficient increased. When annealed at 473 K for 1 hr, Seebeck coefficient and electrical conductivity were $160\mu$V/K and 610 $W^{-1}$ $cm^{ -1}$, respectively. Therefore, the thermoelectric quality factor were also enhanced to be $16\mu$W/cm $K^2$.>.

• 한국재료학회지
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• 제24권11호
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• pp.604-609
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• 2014

The thermoelectric power and dc conductivity of $La_{2/3+x}TiO_{3-{\delta}}$ (x = 0, 0.13) were investigated. The thermoelectric power was negative between 80K and 300K. The measured thermoelectric power of x = 0.13 increased linearly with increased temperatures and was represented by $S_0+BT$. The x = 0 sample exhibited insulating behavior, while the x = 0.13 sample showed metallic behavior. The electric resistivity of x = 0.13 had a linear temperature dependence at high temperatures and a T3/2 dependence below about 100K. On the other hand, the electric resistivity of x = 0 has a linear relation between $ln{\rho}/T$ and 1/T in the range of 200 to 300K, and the activation energy for small polaron hopping was 0.23 eV. The temperature dependence of thermoelectric power and the resistivity of x = 0 suggests that the charge carriers responsible for conduction are strongly localized. This temperature dependence indicates that the charge carrier (x = 0) is an adiabatic small polaron. These experimental results are interpreted in terms of spin (x = 0.13) and small polaron (x = 0) hopping of almost localized Ti 3d electrons.