• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.429-429
• /
• 2016

Organolead halide perovskite have attracted much attention over the past three years as the third generation photovoltaic due to simple fabrication process via solution process and their great photovoltaic properties. Many structures such as mesoporous scaffold, planar heterojunction or 1-D TiO2 or ZnO nanorod array structures have been studied to enhance performances. And the photovoltaic performances and carrier transport properties were studied depending on the cell structures and shape of perovskite film. For example, the perovskite cell based on TiO2/ZnO nanorod electron transport materials showed higher electron mobility than the mesoporous structured semiconductor layer due to 1-D direct pathway for electron transport. However, the reason for enhanced performance was not fully understood whether either the shape of perovskite or the structure of TiO2/ZnO nanorod scaffold play a dominant role. In this regard, for a clear understanding of the shape/structure of perovskite layer, we applied anodized aluminum oxide material which is good candidate as the inactive scaffold that does not influence the charge transport. We fabricated vertical one dimensional (1-D) nanostructured methylammonium lead mixed halide perovskite (CH3NH3PbI3-xClx) solar cell by infiltrating perovskite in the pore of anodized aluminum oxide (AAO). AAO template, one of the common nanostructured materials with one dimensional pore and controllable pore diameters, was successfully fabricated by anodizing and widening of the thermally evaporated Al film on the compact TiO2 layer. Using AAO as a scaffold for perovskite, we obtained 1-D shaped perovskite absorber, and over 15% photo conversion efficiency was obtained. I-V measurement, photoluminescence, impedance, and time-limited current collection were performed to determine vertically arrayed 1-D perovskite solar cells shaped in comparison with planar heterojunction and mesoporous alumina structured solar cells. Our findings lead to reveal the influence of the shape of perovskite layer on photoelectrical properties.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.889-892
• /
• 2009

We have developed a practical printing technology for the gate electrode of organic thin film transistors(OTFTs) by combining screen-printing with wet-etching process using nano-silver ink as a conducting material. The screen-printed and wet-etched Ag electrode exhibited a minimum line width of ~5 um, the thickness of ~65 nm, and a resistivity of ${\sim}10^{-6}{\Omega}{\cdot}cm$, producing good geometrical and electrical characteristics for gate electrode. The OTFTs with the screen-printed and wet-etched Ag electrode produced the saturation mobility of $0.13cm^2$/Vs and current on/off ratio of $1.79{\times}10^6$, being comparable to those of OTFT with the thermally evaporated Al gate electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.4
• /
• pp.373-378
• /
• 2006

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with Al cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that OLED with Al cathode layer prepared by BCS has much lower leakage current density ($1{\times}10^{-5}\;mA/cm^2$ at -6 V) than that $(1{\times}10^{-2}{\sim}-10^0\;mA/cm^2)$ of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and DC/RF sputtering in fabrication process of organic based optoelectronics.

• Journal of the Korean Vacuum Society
• /
• v.17 no.5
• /
• pp.466-472
• /
• 2008

Purple Gold is the alloy consisting of 78wt%Au-22wt%Al, and is expressed as a chemical formula, $AuAl_2$. Lately it is being used for the material of accessories or the decorative ornaments, being one of the colored golds having the peculiar purple color, like White Gold and Pink Gold. Purple Gold has the weak point in shaping through casting process due to the bad malleability and castability, being the intermetalic compound of Au and Al. Therefore, it is possible to produce the final product only by the cutting and the grinding process or to use it as a decorative coat with the thin film evaporation. This study implemented two kinds of thin film experiments. One is the case that heat treatment was made after Au and Al deposition evaporated separately with a weight ratio 78:22 on the 200nm$SiO_2$/Si substrate. The other is the case that the surface deposition was made through the vacuum evaporation, keeping the glass substrate temperature remain room temperature, using the bulk $AuAl_2$ as a source. The final film property was measured, focusing on the Purple Gold's color and thickness through the bare eye inspection, the microstructure analysis, the surface resistance analysis, the color difference analysis, and XRD analysis. Purple Gold was not formed, as the excessive surface agglomeration occurred, in case of being produced and treated thermally with 12.5nmAu/40nmAl/200nm$SiO_2$/Si structure. Our results suggest that of Purple Gold films, showing the same purple color as the bulk's, were successfully deposited with the direct thermal evaporation from the $AuAl_2$ bulk source.

• Journal of Sensor Science and Technology
• /
• v.15 no.5
• /
• pp.309-316
• /
• 2006

The $SnO_{2}$ thin film sensors were fabricated by a thermal oxidation method. $SnO_{2}$ thin film sensors were treated in $N_{2}$ atmosphere. The sensors with $O_{2}$ treatment after $N_{2}$ treatment showed 70 % sensitivity for 1 ppm $H_{2}S$ gas, which is higher than the sensors with only $O_{2}$ treatment. The Ni metal was evaporated on Sn thin film on the $Al_{2}O_{3}$ substrate. And the sensor was heated to grow the Sn nanowire in the tube furnace with $N_{2}$ atmosphere. Sn nanowire was thermally oxidized in $O_{2}$ environments. The sensitivity of $SnO_{2}$ nanowire sensor was measured at 500 ppb $H_{2}S$ gas. The selectivity of $SnO_{2}$ nanowire sensor compared with thin film and thick film $SnO_{2}$ was measured for $H_{2}S$, CO, and $NH_{3}$ in this study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.4
• /
• pp.342-349
• /
• 2009

This study investigated the growth characteristics of carbon nanotubes (CNTs) by changing a period of annealing time and a $C_{2}H_{2}/H_2$ flow ratio at temperature as low as $450^{\circ}C$ with inductively coupled plasma chemical vapor deposition. The 1-nm-thick Fe-Ni-Co alloy thin film served as a catalyst layer for the growth of CNTs, which was thermally evaporated on the 15-nm-thick Al underlayer deposited on the 50-nm-thick Ti diffusion barrier. The annealing at low temperature of $450^{\circ}C$ brought about almost no granulation of the catalyst layer, and the CNT growth was not affected by a period of annealing time. A study of changing the flow rate of $C_{2}H_{2}$ and $H_2$ showed that as the ratio of the $C_{2}H_{2}$ flow rate to the $H_2$ flow rate was lowered, the CNTs were grown to be longer With further decreasing the flow ratio, the length of CNTs reached the maximum and then became shorter. Under the optimized gas flow rates, we successfully synthesized CNTs with a uniform length over a 4-inch Si wafer at $450^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.289-289
• /
• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.