• Journal of the Korean Society for Precision Engineering
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• v.23 no.4 s.181
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• pp.162-167
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• 2006

Hot embossing lithography(HEL) has the production advantage of comparatively few process step, simple operation, a relatively low cost for embossing tools(Si), and high replication accuracy for small features. In this paper, we considered the nano-molding characteristic according to molding parameters(temperature, pressure, times, etc) and induced a optimal molding condition using HEL. High precision nano-patter master with various shapes were designed and manufactured using the DRIE(Deep Reactive ion Etching), LPCVD(Low Pressure Chemical Vapor Deposition) and thermal oxidation process, and we investigated the molding characteristic of DVD and Blu-ray nickel stamp. We induced flow behaviors of polymer, rheology by shapes and sizes of the pattern through various molding experiments. Finally, with achieving nano-structure molding with high aspect ratio, we will secure a basic technology about the molding of large-area nano-pattern media.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.247-252
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• 2004

노튜브의 길이는 급격히 증가하였지만 촉매금속의 적층방법에 따른 탄소나노튜브의 성장 형태는 큰 차이가 없었다. 특히, ICBD 방법에 의해 Ni 촉매금속을 증착한 경우 다른 방법에 비하여 직선적인 탄소나노튜브가 관찰되었다. ^x Carbon nanotubes were grown on SiO$_2$/Si substrates by applying $C_2$H$_2$ gas through chemical vapor deposition process. It was found that carbon nanotubes were grown successfully on the substrates with catalytic films under 20 $\AA$ total thickness. The increase in reaction temperature from 50$0^{\circ}C$ to 80$0^{\circ}C$ resulted in longer carbon nanotube, but there was no clear tendencies with different types of catalytic layers. It was evident that carbon nanotubes became more straight on the substrate with Ni catalytic film produced by ICBD method.

• Journal of Industrial Technology
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• v.19
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• pp.101-105
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• 1999

Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

• Journal of Environmental Science International
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• v.7 no.5
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• pp.669-677
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• 1998

A porous $\alpha$-alumina tube of 2.5 mm O.D. and 1.9 mm I.D. was used as the support of an inorganic membrane. Macropores of the tube, about 150 nm in size, were plugged with silica formed by thermal decomposition of tetraethylorthosilicate at $600^{\circ}C$. The forced cross-flow CVD method that reactant was evacuated through the porous wall of the support was very effective in plugging macropores. The H$_2$ permeance of the prepared membrane was of the order of $10^{-8}/ molㆍs^{-1}/ㆍm^{-2}/. Pa{-1}$/, while the $N_2$ permeance was below $10^{-11}/ molㆍs^{-1}/ㆍm^{-2}/ㆍPa^{-1}$/ at $600^{\circ}C$. This was comparable to that of silica-modified Vycor glass whose size was 4 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.389-393
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• 2007

We fabricated field-effect transistor based carbon nanotubes(CNTs) directly grown by thermal chemical vapor deposition(CVD) and analyzed their performance. The Ethylene ($C_2H_4$), hydrogen($H_2$) and Argon(Ar) gases were used for the growth of CNTs at $700\;^{\circ}C$. The growth properties of CNTs on the device were analyzed by SEM and AFM. The electrical transport characteristics of CNT FET were investigated by I-V measurement. Transport through the nanotubes is dominated by holes at room temperature. By varying the gate voltage, we successfully modulated the conductance of FET device by more than 7 orders of magnitude.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1639-1641
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• 1996

Polyirnide thin films were fabricated an using vapor deposition polymerization apparatus, and their FT-IR and TGA characteristics were investigated. The peaks of $720cm^{-1}$ and $1380cm^{-1}$ show C=O stretch mode and C-N stretch mode, and that of the cured polyimide at $300^{\circ}C$ were saturated. TGI(Thormogravi metric index) was showed at $459^{\circ}C$ from reaserch of thermal resistivity characteristics by TGA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.59-62
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• 2017

CNT (carbon nanotube) resistors with low resistance and negative TCR (temperature coefficient of resistance) were fabricated with yarned CNT (carbon nanotube) fibers. The CNT fibers were prepared by yarning CNTs grown on the silicone substrate by CVD (chemical vapor deposition) method. The CNT resistors were fabricated by winding CNT fibers on the surface of ceramic rod. Both metal terminals were connected with the CNT fiber wound on the ceramic rod. We measured electrical resistance and thermal stability with the number of CNT fibers wound. The CNT resistor system shows linearly decreased resistance with the number of CNTs wound on the ceramic rod and saturated at 20 strands. The CNT resistor system has negative TCR between $-1,000{\sim}-2,000ppm/^{\circ}C$ and stable frequency properties under 100 kHz.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.21-24
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• 2008

Properties of carbon nano fiber (CNF) as field emitters were described. Carbon nano fiber (CNF) of herringbone was prepared by thermal chemical vapor deposition(CVD). Field emitters mixed with organic binders, conductive materials and were prepared by screen-printing process. In order to increase field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNF emitters on cathode electrode. The measurements of field emission properties were carried out by using a diode structure inline vacuum chamber. CNF of herringbone type showed good emission properties that a turn on field was as low as 2.1 $V/{\mu}m$ and current density was as large as 0.15 $mA/cm^2$ of 4.2 $V/{\mu}m$ with electric field. Through the results. we propose that CNFs are suitable for application of electron emitters in Field Emission Devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.694-696
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• 2002

Growth behaviors of carbon nanotubes (CNTs) are studied in terms of catalyst by using scanning electron microscopy and transmission electron microscope (TEM). Catalyst films deposited on various substrates are agglomerated into nano-islands during the heat-up to the growth temperature. In particular, we focus on the direct investigation of the microstructures of the CNTs and the interface of CNTs-catalyst-substrate using cross-sectional TEM. We investigate relationship to the subsequent CNTs growth on each nucleation site. The growth of CNTs depends on the catalyst itself but not the silicide formation between the catalyst and the substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.770-772
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• 2002

A new dry-processing method of organic gate dielectric film in field-effect transistors (FETs) was proposed. The method use vapor deposition polymerization (VDP) that is continuous and low temperature process. It has the advantages of shadow mask patterning and dry processing in flexible low-cost large area applications. Here, 80 nm-thick Al as a gate electrode was evaporated through shadow mask. Gate insulators used two different polyimides. The one material was 4,4'-oxydiphtahlic anhydride (ODPA) and 4,4'-oxydianiline (ODA). Another was 2,2-bis(3,4-dicarboxyphenyl) Hexafluoropropane Dianhydride (6FDA) and 4,4' -oxydianiline (ODA). These were co-deposited by high-vaccum thermal-evapora and cured at 150 $^{\circ}C$ for 1 hour, respectively. Pentacene as a semiconductor and 100 nm-thick Au as a source and drain electrode were evaporated through shadow mask.