• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.826-829
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• 2003

Metal/chalcogenide glass semiconductor(CGS) thin film devices were produced in the vacuum evaporator by the methode of vacuum thermal evaporation. We investigated the influence of the correlations of thickness of metal and CGS upon the concentration of Metal in a CGS thin film. It has shown that M/CGS thin film devices were very sensitive to temperature.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.1
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• pp.131-136
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• 2008

The double-walled steel vessel with powder insulation in the space between the walls is used to minimize heat transfer by radiation and conduction in cryogenic storage tank. The vacuum required the insulation is much less extreme than with high-vacuum or multilayer insulations. The solid supports are used to bear the weight of the inner container. Thermal and structural analysis of the tank have been carried out to study the effect of vacuum and weldment geometry of the internal supports. Heat flux in wall is increased with increasing of thermal conductivity of perlite. Heat flux and stress of support is not affected by weldment geometry.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.27-32
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• 2003

A large cryo-pumping system composed of 4 cryosorption pumps was designed and manufactured to satisfy the pressure requirements of the NBI test stand. The cryosorption pump consists of a thermal shield/baffle assembly and a cryopanel coated with activated carbon granules. The thermal shield is cooled by liquid nitrogen, and the cryopanel by a commercial helium refrigerator. The operation characteristics and vacuum performance of the cryosorption pump were investigated. The cooling down time of the cryopanel to 20 K was about 6 hours with a liquid nitrogen consumption rate of about 35 L/hr. The maximum pumping speed of the cryosorption pump for the hydrogen gas measured by the steady pressure method was about 90,000 L/s.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.973-978
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• 2007

In this paper, we make a study of a thermal deformation by FEM and test to define the deformation mode of the Vacuum-Cleaner's Nozzle-Cover. In FEM analysis, 3 different conditions were considered separately, such as (1) Compressive force by Belt tension, (2) Friction heat between Belt and Shaft and (3) Compressive force combined with heat. Throughout FEM analysis it was found that the deformation was caused by heat and it was proved through a simulation test with a real product.

• Journal of the Korean Society of Food Science and Nutrition
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• v.11 no.4
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• pp.17-24
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• 1982

Optimum moisture content of about 60% of cooked rice was obtained by soaking the fully steamed rice with 35% moisture conture content in ambient water temperature$(24^{\circ}C)$ for one hour. Two different levels of package vacuum was used in packing this cooked rice in retort pouch, and the effect of the levels of package vacuum on the texture of the cooked rice in the pouch during thermal process was investigated: Higher sterilization value (Fo value) and steeper slope (fh value) on the heating curve of the thermal process was obtained with the higher package vacuum product. The j value of the heating curves of cooked rice packed in retort pouch was ranged between 0.80 and 1.18 without respect to the levels of the package vacuum and the process temperature. Although in respective of the ratio of the stickiness to the hardness (-H/H) the product with higher package vacuum showed better result, the shape of most of the rice grain in the vacuum vacuum pouch was deformed and Jumped mass of inferior quality than the one in the lower vacuum package.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.219-219
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• 2012

The formation and thermal desorption behaviors of octanethiol (OT) SAMs on single crystalline Au (111) and polycrystalline Au, Ag, and Cu substrates were examined by X-ray photoelectron microscopy (XPS), thermal desorption spectroscopy (TDS), and contact angle (CA) measurements. XPS and CA measurements revealed that the adsorption of octanethiol (OT) molecules on these metals led to the formation of chemisorbed self-assembled monolayers (SAMs). Three main desorption fragments for dioctyl disulfide (C8SSC8+, dimer), octanethiolate (C8S+), and octanethiol (C8SH+) were monitored using TDS to understand the effects of surface morphology and the nature of metal substrates on the thermal desorption behavior of alkanethiols. TDS measurements showed that a sharp dimer peak with a very strong intensity on single crystalline Au (111) surface was dominantly observed at 370 K, whereas a broad peak on the polycrystalline Au surface was observed at 405 K. On the other hand, desorption behaviors of octanethiolates and octanethiols were quite similar. We concluded that substrate morphology strongly affects the dimerization process of alkanethiolates on Au surfaces. We also found that desorption intensity of the dimer is in the order of Au＞＞Ag＞Cu, suggesting that the dimerization process occurs efficiently when the sulfur-metal bond has a more covalent character (Au) rather than an ionic character (Ag and Cu).

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.8 no.4
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• pp.497-509
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• 1996

Evacuated powder insulations have long been known to have better thermal performance than existing commercially available insulators, such as fiber glass and CFC-blown foam. To make a composite powder panel, a series of individually evacuated panels was encapsulated in a rigid closed cell foam matrix. The panels were encapsulated in a thin glass sheet barrier to preserve the vacuum. The thermal conductivity of the individual panel was found to be $0.0062W/m^{\circ}K$ by experiment and the polyurethane foam above had a thermal conductivity of $0.024W/m^{\circ}K$. In this study, numerical analysis using finite element method was carried out to investigate insulation performance of rigid foam/evacuated powder composite panel with respect to panel geometries such as panel pitch, panel aspect ratio and panel area ratio. Numerical analysis has indicated that more optimal vacuum panel geometries, much lower overall thermal conductivities can be achieved.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.298-307
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• 1997

TDS(Thermal Desorption Spectroscopy)system, for diagnosis of CRT manufacturing process, was designed and constructed. Outgassings and thermal desorptions from the part or materials of CRT can be measured and analysed with this system at various temperatures. The system is consisted of 3 parts, vacuum chamber and pumping system with variable conductance, sample heating stages & their controller, and outgassing measurement devices, like as ion gauge or quadrupole mass spectrometer. The ultimate pressure of the system was under $1{\times}10^{-7}$ Pa. With the variable conductance system, the effective pumping speed of the chamber could be controlled from sub l/s to 100 l/s. The effective pumping speed values were determined by dynamic flow measurement principle. The temperatures and ramp rate of sample were controlled by tungsten heater and PID controller up to 600℃ within ±1℃ difference to setting value. Ion gauge & QMS were calibrated for quantitative measurements. Some examples of TDS measurement data and application on the CRT process analysis were shown.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.