• Journal of Welding and Joining
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• v.13 no.2
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• pp.82-95
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• 1995

This paper discusses distribution of thermal stress, strain at near the joint and investigates the reliability of solder joints of electronic devices on a printed circuit board. As Electronic devices are composed of different materials, thermal stresses generate at near the interface, such as solder joints and interface between lC device and lead frame pad due to the differences of thermal expansion coefficients, As results of thermal stress, strain, micro crack often occurs thermal fatigue fracture at the interface of different materials, The initiation and propagation of micro crack depend on the environmental conditions, such as storage temperature and thermal cycling. Finally, this paper experimentally shows a way to suppress micro cracks by using Fe-Ni alloy clad lead frame, and investigates crack and thermal fatigue fracture of TSOP(Thin small outline package) type on printed circuit board.

• Journal of the Korea Society of Computer and Information
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• v.23 no.11
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• pp.67-74
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• 2018

The verification for the design limit margin of the power device for the information communication and surveillance systems using HALT(Highly Accelerated Life Test) reliability test is described. The HALT reliability test performs with a step stress method which change condition until the marginal step in a design and development phase. The HALT test methods are the low temperature(cold) step stress test, the high temperature(hot) step stress test, the thermal shock cyclic stess test, and the high temperature destruct limit(hot DL) step stress test. The power device is checked the operating performance during the test. In this paper, the HALT was performed to find out the design limit margin of the power device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.50-57
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• 2022

Reliability of CMOS has been severed under aggressive device scaling. Conventional technologies such as lightly doped drain (LDD) and forming gas annealing (FGA) have been applied for better device reliability, but further advances are modest. Alternatively, electro-thermal annealing (ETA) which utilizes Joule heat produced by electrodes in a MOSFET, has been newly introduced for gate dielectric curing. However, concerns about mechanical stability during the electro-thermal annealing, have not been discussed, yet. In this context, this paper demonstrates the mechanical stability of nanosheet FET during the electro-thermal annealing. The effect of mechanical stresses during the electro-thermal annealing was investigated with respect to device design parameters.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.68-74
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• 2017

Nanoimprint lithography (NIL) is a next generation technology for fabrication of micrometer and nanometer scale patterns. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. Up to now there have been a lot of researches on thermal NIL, but most of them have been focused on polymer deformation in the molding process and there are very few studies on the cooling and demolding process. In this paper a cooling process of the polymer resist in thermal NIL is analyzed with finite element method. The modeling of cooling process for mold, polymer resist and substrate is developed. And the cooling process is numerically investigated with the effects of imprinting temperature and residual layer thickness of polymer resist on stress distribution of the polymer resist. The results show that the lower imprinting temperature, the higher the maximum von Mises stress and that the thicker the residual layer, the greater maximum von Mises stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.9-12
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• 2004

In this study, we investigated about electrooptics characteristic of three kind of TN cell on the polyimide surface. Monodomain alignments of thermal stressed TN cell over temperature of liquid crystal isotropic phase were almost same that of no thermal stressed TN cells. However, the thermal stressed TN cell have many defects. Also, threshold voltage and response time of thermal stressed TN cells show same performances of no thermal stressed TN cells. There were little changes of value in these TN cells. However, transmittances of TN cells on the polyimide surface decrease with increasing thermal stress time. Finally, the residual DC voltage of the thermal stressed TN cell on the polyimide surface show decrease of characteristics as increasing thermal stress time. Therefore, thermal stability of TN cell was decreased by high thermal stress for the long times.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1549_1550
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• 2009

본 연구에서는 적외선 가스 센서용 IR source에 대한 연구를 진행하였다. MEMS 공정을 이용하여 poly-silicon을 IR source의 발열체로 사용하였다. Chip size는 $2{\times}2mm$ 이며 membrane의 면적은 $1{\times}1mm$로 설계, 제작 하였다. 제작된 IR source의 적외선 방출 특성을 적외선 카메라를 이용하여 관찰하였으며, 같은 온도에서의 thermal stress에 대한 관찰도 진행하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.1
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• pp.13-19
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• 2013

This study examines thermal safety on three-way catalyst that dominates 70% among whole exhaust gas purification device in 2003. Three-way catalyst maintains high temperature in interior domain but maintains low temperature on outside surface. Therefore this device shows tensile stress on outside surface. Temperature distribution of three-way catalyst was acquired by thermal flow analysis for predicted thermal flow parameter. Thermal stress analysis for three-way catalysis was performed based on this temperature distribution. Thermal safety of three-way catalyst was estimated by strength reduction factor and failure probability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.587-595
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• 1998

Transient thermal analysis simulations are carried out using a modeling program to understand the human body model HBM ESD. The devices were simulated a one-dimensional device subjected to ESD stress by solving Poison's equation, the continuity equation, and heat flow equation. A ramp rise with peak ESD voltage during rise time is applied to the device under test and then discharged exponentially through the device. LDD and NMOS structures were studied to evaluate ESD performance, snap back voltages, device heating. Junction heating results in the necessity for increased electron concentration in the space charge region to carry the current by the ESD HBM circuit. The doping profile adihacent to junction determines the amount of charge density and magnitude of the electric field, potential drop, and device heating. Shallow slopes of LDD tend to collect the negative charge and higher potential drops and device heating.

• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.345-351
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• 1998

Thermal shock resistance of $Al_2O_3$- and Fe-$Al_2TiO_5$-based Castable Refractories was studied using a central heating technique. Ring type specimens, 10mm thick and 20 and 100mm inner and outer diameters, respectively, were rapidly heated on the internal surface of the centre hole using a high power electrical heating element. The temperature field was measured experimentally and modelled using finite element analysis (FEA). The thermal stress field was also modelled using FEA. A radial notch was introduced to the ring specimens to enable calculation of the thermal stress intensity factors (SIF). A special LVDT device was incorporated in the thermal shock tester to monitor crack mouth opening displacement (COD). The thermal shock fracture initiation and crack propagation behaviour of the castable refractories were ascertained using the COD measurements and the fracture mechanics analysis data.

• Nuclear Engineering and Technology
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• v.51 no.2
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• pp.510-517
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• 2019

Increasing proliferation resistance of plutonium by way of increased $^{238}Pu$ content is of interest to the nuclear nonproliferation and international safeguards community. Considering the high alpha decay heat of $^{238}Pu$, increasing the isotopic fraction leads to a noticeably higher amount of heat generation within the plutonium. High heat generation is especially unattractive in the scenario of weaponization. Upon weaponization of the plutonium, the plutonium may generate enough heat to elevate the temperature in the high explosives to above its self-explosion temperature, rendering the weapon useless. In addition, elevated temperatures will cause thermal expansion in the components of a nuclear explosive device that may produce thermal stresses high enough to produce failure in the materials, reducing the effectiveness of the weapon. Understanding the technical limit of $^{238}Pu$ required to reduce the possibility of weaponization is key to reducing the current limit on safeguarded plutonium (greater than 80 at. % $^{238}Pu$). The plutonium vector evaluated in this study was found by simulating public information on Lightbridge's fuel design for pressurized water reactors. This study explores the temperature profile and maximum stress within a simple (first generation design) hypothetical nuclear explosive device of four unique scenarios over time. Analyzing the transient development of both the temperature profile and maximum stress not only establishes a technical limit on the $^{238}Pu$ content, but also establishes a time limit for which each scenario would be useable.