• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.380-381
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• 2012

Bioinspired sea urchin-like structures were fabricated on silicon by inductively coupled plasma (ICP) etching using lens-like shape hexagonally patterned photoresist (PR) patterns and subsequent metal-assisted chemical etching (MaCE) [1]. The lens-like shape PR patterns with a diameter of 2 ${\mu}m$ were formed by conventional lithography method followed by thermal reflow process of PR patterns on a hotplate at $170^{\circ}C$ for 40 s. ICP etching process was carried out in an SF6 plasma ambient using an optimum etching conditions such as radio-frequency power of 50 W, ICP power of 25 W, SF6 flow rate of 30 sccm, process pressure of 10 mTorr, and etching time of 150 s in order to produce micron structure with tapered etch profile. 15 nm thick Ag film was evaporated on the samples using e-beam evaporator with a deposition rate of 0.05 nm/s. To form Ag nanoparticles (NPs), the samples were thermally treated (thermally dewetted) in a rapid thermal annealing system at $500^{\circ}C$ for 1 min in a nitrogen environment. The Ag thickness and thermal dewetting conditions were carefully chosen to obtain isolated Ag NPs. To fabricate needle-like nanostructures on both the micron structure (i.e., sea urchin-like structures) and flat surface of silicon, MaCE process, which is based on the strong catalytic activity of metal, was performed in a chemical etchant (HNO3: HF: H2O = 4: 1: 20) using Ag NPs at room temperature for 1 min. Finally, the residual Ag NPs were removed by immersion in a HNO3 solution. The fabricated structures after each process steps are shown in figure 1. It is well-known that the hierarchical micro- and nanostructures have efficient light harvesting properties [2-3]. Therefore, this fabrication technique for production of sea urchin-like structures is applicable to improve the performance of light harvesting devices.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.25-31
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• 2010

In this study, we investigated the morphology and thermal stability of interfacial phases in joint between lead free solder(Sn-3.0Ag-0.5Cu) and electroless Ni-W-P under bump metallizations(UBM) with different tungsten contents as a function of thermal aging. Content of phosphorus of each deposits was fixed at 8 wt.%, and content of tungsten was variated each 0, 3, 6 and 9 wt.%. Specimens were prepared by reflowing at $255^{\circ}C$, aging range was $200^{\circ}C$ and up to 2 weeks. After reflow process, in the electroless Ni(W)-P/solder joint, the interfacial intermetallic compound(IMC) was showed both $(Cu,Ni)_6Sn_5$ and $(Ni,Cu)_3Sn_4$. UBM and generated IMC at the interface of lead free solder was proportionally increased with aging time. The thickness of IMC was increased because the generation rate of $Ni(W)_3P$ decreased with increasing contents of W.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.3
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• pp.25-29
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• 2022

Recently, the importance of electronic packaging technology has been attracting attention, and heterogeneous integration technology in which chips are stacked out-of-plane direction is being applied to the electronic packaging field. The 2.5D integration circuit is a technology for stacking chips using an interposer including TSV, and is widely used already. Therefore, it is necessary to make the interposer mechanically reliable in the packaging process that undergoes various thermal processes and mechanical loadings. Considering the structural characteristics of the interposer on which several thin films are deposited, thermal stress due to the difference in thermal expansion coefficients of materials can have a great effect on reliability. In this study, the mechanical reliability of the metal pad for wire bonding on the silicon interposer against thermal stress was evaluated. After heating the interposer to the solder reflow temperature, the delamination of the metal pad that occurred during cooling was observed and the mechanism was investigated. In addition, it was confirmed that the high cooling rate and the defect caused by handling promote delamination of the metal pads.

• Design & Manufacturing
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• v.2 no.5
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• pp.1-4
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• 2008

LCD-BLU (Liquid Crystal Display - Back Light Unit) is one of kernel parts of LCD unit and it consists of several optical sheets(such as prism, diffuser and protector sheets), LCP (Light Guide Plate), light source (CCFL or LED) and mold frame. The LGP of LCD-BLU is usually manufactured by forming numerous dots with $50-200{\mu}m$ in diameter on it by erosion method. But the surface of the erosion dots of LGP is very rough due to the characteristics of the erosion process during the mold fabrication, so that its light loss is high along with the dispersion of light into the surface. Accordingly, there is a limit in raising the luminance of LCD-BLU. Especially, the negative and positive micro-lens pattern fabricated by modified LiGA with thermal reflow process was applied to the optical design of LGP.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.45-51
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• 2001

The effects of wettability and surface oxidation on the low temperature and ultra-fine solder bump formation have been studied. Difference sequences of near eutectic In-Ag and eutectic Bi-Sn solders were evaporated on Au/Cu/Cr or Au/Ni/Ti Under Bump Metallurgy (UBM) pads. Solder bumps were formed using lift-off method and were reflowed in Rapid Thermal Annealing (RTA) system. The solder bumps in which In was in contact with UBM in In-Ag solder and the solder bumps in which Sn was in contact with UBM in Bi-Sn solder showed better bump formability during reflow than other solder bumps. The ability to form spherical solder bumps was affected mainly by the wettability of solders to UBM pads.

• Transactions of Materials Processing
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• v.16 no.1 s.91
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• pp.48-53
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• 2007

LCD-BLU(Liquid Crystal Display - Back Light Unit) consists of several optical sheets: LGP(Light Guiding Plate), light source and mold frame. The LGP of LCD-BLU is usually manufactured by etching process and forming numerous dots with $50{\mu}m$ in diameter on the surface. But the surface roughness of LGP with etched dots is very high, so there is much loss of light. In order to overcome the limit of current etched dot patterned LGP, optical pattern design with microlens of $50{\mu}m$ diameter was applied in the present study. The microlens pattern fabricated by modified LiGA with thermal reflow process was applied to the optical design of LGP and optical simulation was carried out to know tendency of microlens patterned LGP simultaneously. The attention was paid to the effects of different aspect ratio(i.e. $0.2\sim0.5$) of optical pattern conditions to the brightness distribution of BLU with microlens patterned LGP. Finally, high aspect ratio microlens patterned LGP showed superior results to the one made by low aspect ratio in average luminance.

• Korea-Australia Rheology Journal
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• v.19 no.3
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• pp.165-169
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• 2007

The light guide plate (LGP) of LCD-BLU (Liquid Crystal Display-Back Light Unit) is usually manufactured by forming numerous dots by etching process. However, the surface of those etched dots of LGP is very rough due to the characteristics of etching process, so that its light loss is relatively high due to the dispersion of light. Accordingly, there is a limit in raising the luminance of LCD-BLU. In order to overcome the limit of current etched-dot patterned LGP, micro-lens pattern was tested to investigate the possibility of replacing etched pattern in the present study. The micro-lens pattern fabricated by the modified LiGA with thermal reflow process was applied to the optical design of LGP. The attention was paid to the effects of different optical pattern type (i.e. etched dot, micro-lens). Finally, the micro-lens patterned LGP showed better optical qualities than the one made by the etched-dot patterned LGP in luminance.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.77-82
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• 2012

In this paper, the research of IC embedded PCB process is carried out. For embedding chips into PCB, solder-balls on chips were etched out and ABF(Ajinomoto Build-ip Film), prepreg and Cu foil was laminated on that to fabricate 6 layer build-up board. The chip of which solder ball was removed was successfully interconnected with PCB by laser drilling and Cu plating. However, de-lamination phenomenon occurred between chip surface and ABF during reflow and thermal shock. To solve this problem, de-smear and plasma treatment was applied to PI(polyimide) passivation layer on chip surface to improve the surface roughness. The properties of chip surface(PI) was investigated in terms of AFM(Atomic Force Micrometer), SEM and XPS (X-ray Photoelectron Spectroscopy). As results, nano-size anchor was evenly formed on PI surface when plasma treatment was combined with de-smear(NaOH+KMnO4) process and it improved thermal shock reliability ($260^{\circ}C$-10sec solder floating).

• Journal of Welding and Joining
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• v.23 no.3
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• pp.61-67
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• 2005

Since lead (Pb)-free solders for electronics have higher melting points than that of eutectic Sn-Pb solder, they need higher soldering temperatures. In order to decrease the soldering temperature we tried to coat Sn-Bi layer on $Sn-3.5\%Ag$ solder by electroplating, which applies the mechanism of transient liquid phase bonding to soldering. During heating Bi will diffuse into the $Sn-3.5\%Ag$ solder and this results in decreasing soldering temperature. As bonding samples, the 1608 capacitor electroplated with Sn, and PCB, its surface was finished with electroless-plated Ni/Au, were selected. The $Sn-95.7\%Bi$ coated Sn-3.5Ag was supplied as a solder between the capacitor and PCB land. The samples were reflowed at $220^{\circ}C$, which was lower than that of normal reflow temperature, $240\~250^{\circ}C$, for the Pb-free. As experimental result, the joint of $Sn-95.7\%Bi$ coated Sn-3.5Ag showed high shear strength. In the as-reflowed state, the shear strength of the coated solder showed 58.8N, whereas those of commercial ones were 37.2N (Sn-37Pb), 31.4N (Sn-3Ag-0.5Cu), and 40.2N (Sn-8Zn-3Bi). After thermal shock of 1000 cycles between $-40^{\circ}C$ and $+125^{\circ}C$, shear strength of the coated solder showed 56.8N, whereas the previous commercial solders were in the range of 32.3N and 45.1N. As the microstructures, in the solder $Ag_3Sn$ intermetallic compound (IMC), and along the bonded interface $Ni_3Sn_4$ IMC were observed.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.51-56
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• 2015

It has been used various pad finish materials to enhance the reliability of solder joint and recently Electroless Ni Electroless Pd Immersion Gold (the following : ENEPIG) pad has been used more than others. This study is about reliability according to being used in commercial Electrolytic Ni pad and ENEPIG pad, and was observed behavior of various Cu contents. After reflow, the inter-metallic compound (IMC) between solder and pad is composed of $Cu_6Sn_5$ (Ni substituted) by using EDS, and in case of ENEPIG, between IMC and Ni layer was observed the dark layer ($Ni_3P$ layer). Additional, it could be controlled the thickness of dark layer according to Cu contents. Investigated the different fracture mode between electrolytic Ni and ENEPIG pad after drop shock test, in case of soft Ni, accelerated stress propagated along the interface between $1^{st}$ IMC and $2^{nd}$ IMC, and in case of ENEPIG pad, accelerated stress propagated along the weaken surface such as dark layer. The unstable interface exists through IMC, pad material and solder bulk by the lattice mismatch, so that the thermal and physical stress due to the continuous exterior impact is transferred to the IMC interface. Therefore, it is strongly requested to control solder morphology, IMC shape and thickness to improve the solder reliability.