We studied the electrical properties of organic thin-film transistors (OTFTs) fabricated at different deposition rates by measuring the field-effect mobility and the threshold voltages. As the active layer, pentacene thin film with a thickness of 50 nm was deposited at a rate of $0.05{\AA}/s$ to $1.14{\AA}/s$. The thickness of the drain-source gold electrode was 50 nm. The mobility was $1.9{\times}10^{-1}cm^2/V{\cdot}s$ at a deposition rate of $0.05{\AA}/s$, the mobility increased to $5.2{\times}10^{-1}cm^2/V{\cdot}s$ when the deposition rate was increased to $0.4{\AA}/s$, and then the mobility decreased to $6.5{\times}10^{-1}cm^2/V{\cdot}s$ when the deposition rate decreased to $1.14{\AA}/s$. Thus, the mobility of pentacene OTFTs was observed to depend on the thermal deposition rate.
Zeolite was synthesized hydrothermally using the water-treatment sludge, and the effects of various synthesis parameters like reaction temperature, reaction time, and Na2O/SiO2 molar ratio on the crystallization of zeolite were investigated. Crystal structure, physical property, and thermal stability of zeolite crystals were characterized by X-ray powder diffraction, FTIR spectroscopy, BET nitrogen adsorption, and TGA measurements. The removal efficiencies of nitrogen in ammonia, heavy metal ions, and TOC were calculated to evaluate zeolite's adsorption capacity. The primary chemical composition of water-treatment sludge was 28.79% Al2O3 and 27.06% SiO2. The zeolites were synthesized by merely employing the water-treatment sludge as silica and alumina sources without additional chemicals. Zeolite crystals synthesized through the water-treatment sludge were confirmed as an A-type zeolite structure. Zeolite A had the highest crystallinity obtained from a gel with the molar composition 2.1Na2O-Al2O3-1.6SiO2-65H2O after 5 h at a temperature of 90 ℃. The specific surface area of zeolite obtained was 55 ㎡ g-1, which was higher than commercial zeolite A. The removal efficiency of nitrogen in ammonia was 68% after 3 h of reaction time, while the removal efficiencies of Pb2+ and Cd2+ ions were 99.1% and 99.3%, respectively. These results indicate active ion exchange between Pb2+ or Cd2+ ion and Na+ ion in the zeolite framework. The adsorption experiments on the different zeolite addition conditions were performed for 3 h with 300 ppm humic acid. Based on the results, TOC's highest efficiency was 83% when 5 g of zeolite was added.
Journal of the Korean Recycled Construction Resources Institute
/
v.11
no.4
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pp.349-354
/
2023
This study wa s conducted a s pa rt of ma ximizing the use of ca rbon dioxide by a pplying CCU(Ca rbon Ca pture, Utiliza tion) a mong technologies for reducing CO2 in the cement industry. In a carbon dioxide curing environment, changes in carbonation depth and changes in basic physical properties by age due to the mixing of carbonation reaction accelerators were usually targeted at Portland cement paste. In addition, in order to check the fixed amount of CO2 in the concrete field, a thermal analysis method was applied to evaluate CaCO3 decarbonization at high temperatures. As a result of the evaluation, it was confirmed that the carbonation depth in the cured body significantly increased due to the incorporation of CRA in the carbonation depth diffusion performance. In addition, it was confirmed that the weight reduction rate increased by 23.8 % and 40.77 %, respectively, compared to Plain, in the order of curing conditions for constant temperature and humidity and curing conditions for carbonation chambers, so it was confirmed that the amount of excellent CaCO3 produced by the addition of CRA increased as the concentration of CO2 increased.
Dongjin Seo;Yunjo Jung;Hong-Gun Kim;Hyung-Seop Shin;Young-Soon Kim
Progress in Superconductivity and Cryogenics
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v.25
no.4
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pp.19-23
/
2023
The Second-generation high-temperature superconducting (HTS) Rare-Earth Barium Copper Oxide (REBCO) wire is a composite laminate having a multi-layer structure (8 or more layers). HTS wires will undergo multiple loads including the bending-tension loads during winding, high current density, and high magnetic fields. In particular, the wires are subjected to bending stress and magnetic field stress because HTS wires are wound around a circular bobbin when making a high-field magnetic. Each of the different laminated wires inevitably exhibits damage and fracture behavior of wire due to stress deformation, mismatches in thermal, physical, electrical, and magnetic properties. Therefore, when manufacturing high-field magnets and other applications, it is necessary to calculate the stress-strain experienced by high-temperature superconducting wire to present stable operating conditions in the product's use environment. In this study, the finite element model (FEM) was used to simulate the strain-stress characteristics of the HTS wire under high current density and magnetic field, and bending loads. In addition, the result of obtaining the neutral axis of the wire and the simulation result was compared with the theoretical calculation value and reviewed. As a result of the simulation using COMSOL Multiphysics, when a current of 100 A was applied to the wire, the current value showed the difference of 10-9. The stress received by the wire was 501.9 MPa, which showed a theoretically calculated value of 500 MPa and difference of 0.38% between simulation and theoretical method. In addition, the displacement resulted is 30.0012 ㎛, which is very similar to the theoretically calculated value of 30 ㎛. Later, the amount of bending stress by the circular mandrel was received for each layer and the difference with the theoretically obtained the neutral axis result was compared and reviewed. This result will be used as basic data for manufacturing high-field magnets because it can be expanded and analyzed even in the case of wire with magnetic flux pinning.
$Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.
A transparent film was fabricated based on bacterial cellulose (BC), BC has excellent physical strength and stability at high temperature and it is an environmental friendly flexible material. In order to improve the conductivity, silver nanowire (AgNW) and/or graphene were introduced to the BC membrane. The aspect ratio of the AgNW synthesized in this study was 214, with a length of $15{\mu}m$ and width of 70 nm. The higher aspect ratio improved the conductivity by reducing the contact resistance. The thermal and electrical properties of 7 types of films prepared were investigated. Each film was fabricated with rectangular shape ($2mm{\times}2mm{\times}50{\mu}m$). The films were scored with a net shape by a knife, and filled with AgNW and graphene to bestow conductivity. The film filled with AgNW showed favorable electrical characteristics with a thickness of $350{\mu}m$, electron concentration of $1.53{\times}10^{19}$, electron mobility of $6.63{\times}10^5$, and resistivity of 0.28. The film filled with graphene had a thickness of $360{\mu}m$, electron concentration of $7.74{\times}10^{17}$, electron mobility of 0.17, and resistivity of 4.78. The transmittances at 550 nm were 98.1% and 80.9%, respectively. All the films were able to light LEDs bulbs although their brightness differed. A thermal stability test of the BC and PET films at $150{\pm}5^{\circ}C$ showed that the BC film was more stable, whereas the PET film was quickly banded. From these results, it was confirmed that there it is possible to fabricate new transparent conductivity films based on BC.
This study investigated provenance of raw materials and making technique of lime-based materials used in the tomb barriers of the Yesan Mokri tombs from Joseon dynasty on the basis of analysis to material characteristics and physical properties. In the barrier materials, dry density and porosity are the highest value ($1.82g/cm^3$) and the lowest value (25.20%) in the south wall of No. 1 tomb, respectively. Dry density and porosity are inversely proportional in all barrier materials, but unconfined compressive strength, which is the highest value of $182.36kg/cm^2$ in the No. 2 tomb, does not show an interrelation with porosity and density. Mineral components in the lime-soil mixtures of the tomb barrier are mainly quartz, feldspar, mica and calcite about 200 to $600{\mu}m$ size with yellowish brown matrix. Hydrotalcite and portlandite are detected in the lime mixture, and kaolinite in the soils. The lime materials of the tomb barrier occurred in large quantities weight loss and variable endothermic peaks caused by decarbonization reaction of $CaCO_3$ in the range from 600 to $800^{\circ}C$ in thermal analysis. Making temperature of lime for the tomb barrier is presumed approximately about $800^{\circ}C$ based on the occurrences, compositions and thermal analysis. The tomb barriers are revealed to very wide composition ranges of major elements and loss-on-ignition (22.5 to 33.6 wt.%) owing to mixture of the three materials (lime, sand and clay). It is interpreted that low quality construction technique was applied as the limes are very heterogeneous mixture with aggregates, and curing of the lime was poorly processed in the tomb barriers. Possible limestone sources are distributed in many areas around the Mokri site where limestone conformation and quarries for commercial production are found within Yesan and Hongseong areas. Therefore, we estimated that raw materials were possibly supplied from the local mines near the Mokri site.
With the recent reinforcement of emission standards, it is necessary to make efforts to reduce NOx from air pollutant-emitting workplaces. The NOx reduction method mainly used in industrial facilities is selective catalytic reduction (SCR), and the most commercial SCR catalyst is the ceramic honeycomb catalyst. This study was carried out to reduce the NOx emitted from steel plants by applying De-NOx catalyst coated on metallic monolith. The De-NOx catalyst was synthesized through the optimized coating technique, and the coated catalyst was uniformly and strongly adhered onto the surface of the metallic monolith according to the air jet erosion and bending test. Due to the good thermal conductivity of metallic monolith, the De-NOx catalyst coated on metallic monolith showed good De-NOx efficiency at low temperatures (200 ~ 250 ℃). In addition, the optimal amount of catalyst coating on the metallic monolith surface was confirmed for the design of an economical catalyst. Based on these results, the De-NOx catalyst of commercial grade size was tested in a semi-pilot De-NOx performance facility under a simulated gas similar to the exhaust gas emitted from a steel plant. Even at a low temperature (200 ℃), it showed excellent performance satisfying the emission standard (less than 60 ppm). Therefore, the De-NOx catalyst coated metallic monolith has good physical and chemical properties and showed a good De-NOx efficiency even with the minimum amount of catalyst. Additionally, it was possible to compact and downsize the SCR reactor through the application of a high-density cell. Therefore, we suggest that the proposed De-NOx catalyst coated metallic monolith may be a good alternative De-NOx catalyst for industrial uses such as steel plants, thermal power plants, incineration plants ships, and construction machinery.
In order to develop a novel system named "thermal medium and gas circulation type pyrolysis system," this study was conducted to obtain basic data for process simulation before performing the pyrolysis experiment. Polypropylene (PP) was chosen as model material in the basic pyrolysis experiment instead of waste plastic and fluidized sand (hereinafter referred to as "sand"), and it was used as a heat transfer material in the "thermal medium and gas circulation type pyrolysis system." Ni was impregnated as an active catalyst on the sand to promote catalytic pyrolysis. The basic physical properties of PP were analyzed using a thermogravimetric analyzer, and pyrolysis was performed at 600 ℃ in an N2 atmosphere to produce liquid oil. The distribution of the carbon number of the liquid oil generated through the catalytic pyrolysis reaction was analyzed using GC/MS. We investigated the effects of varying the pyrolysis space velocity and catalyst amount on the yield of liquid oil and the carbon number distribution of the liquid oil. Using Ni/sand, the yield of liquid oil was increased except with the pyrolysis condition of 10 wt% Ni/sand at a space velocity of 30,000 h-1, and the composition of C6 ~ C12 hydrocarbons increased. With increases in the space velocity, higher yields of liquid oil were obtained, but the composition of C6 ~ C12 hydrocarbons was reduced. With 1 wt% Ni/sand, the oil yield obtained was greater than that obtained with 10 wt% Ni/sand. In summary, when 1 wt% Ni/sand was used at a space velocity of 10,000 h-1, the oil yield was 60.99 wt% and the composition of C6 ~ C12 hydrocarbons was highest at 42.06 area%.
Proceedings of the Korean Vacuum Society Conference
/
2012.02a
/
pp.100-101
/
2012
The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.
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