• Elastomers and Composites
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• 제57권2호
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• pp.62-72
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• 2022

Passive daytime radiative cooling (PDRC) is attracting increasing attention as an eco-friendly technology that can save cooling energy by not requiring an external power supply. An ideal PDRC structure should improve solar reflectance and emissivity within the atmospheric spectral window. Early designs of photonic crystal materials demonstrated the benefits of PDRC. Since then, functional arrangements of polymer-based radiative cooling materials have played an important role and are rapidly expanding. This review summarizes the known inorganic, organic, and hybrid materials for PDRC. The review also provides a complete understanding of PDRC and highlights its practical applications.

• Journal of Information Display
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• 제2권3호
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• pp.44-47
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• 2001

The extracted field emission current can be used to controllably heat microfabricated cold field emission cathode tips. The heating can be sufficient to smooth and recrystallize the tip surface by surface self-diffusion, and at least partially clean the surface of contaminants by thermal desorption. Self-heating not only allows for the achievement and maintenance of stable emission characteristics, but can be used to make the current-voltage characteristics of microfabricated field emitter tips nearly identical to one another. The resulting improvement in emission uniformity will allow for more reliable array operation at increased electron emission current densities.

• 한국진공학회지
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• 제12권4호
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• pp.218-227
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• 2003

AlGaAs/GaAs HBT 에미터 오믹 접촉을 위해 n형 InGaAs에 대한 Pd/Si/Ti/Pt 및 Pd/Si/Pd/Ti/Au 오믹 접촉 특성을 조사하였다. Pd/Si/Ti/Pt 오믹 접촉의 경우, 증착 상태에서는 접촉 비저항을 측정할 수 없을 정도의 비오믹 특성을 보였으며, $375^{\circ}C$에서 10초 동안 열처리한 경우 $5\times10^{-3}\Omega\textrm{cm}^2$의 높은 접촉 비저항을 나타내었다. 그러나 열처리 조건을 $425^{\circ}C$, 10초로 변화시킬 경우 $2\times10^{-6}\Omega\textrm{cm}^2$의 낮은 접촉 비저항을 나타내었다. Pd/Si/Pd/Ti/Au 오믹 접촉의 경우, $450^{\circ}C$까지의 열처리 동안에 전반적으로 우수한 오믹 특성을 나타내어 $400^{\circ}C$, 20초의 급속 열처리 조건에서 최저 $3.9\times10^{-7}\Omega\textrm{cm}^2$의 접촉 비저항을 나타내었다. 두 오믹 접촉 모두 오믹 재료와 InGaAs의 평활한 계면을 유지하면서 우수한 오믹 특성을 나타내어, 화합물 반도체 소자의 오믹 접촉으로 충분히 응용 가능하였다. Pd/Si/Ti/Pt 및 Pd/Si/Pd/Ti/Au를 AlGaAs/GaAs HBT의 에미터 오믹 접촉으로 사용하여 제작된 HBT 소자의 고주파 특성을 측정한 결과, 차단 주파수가 각각 63.9 ㎓ 및 74.4 ㎓로, 또한 최대공진 주파수가 각각 50.1 ㎓ 및 52.5 ㎓로 우수한 작동특성을 보였다.

• 한국진공학회지
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• 제17권2호
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• pp.90-95
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• 2008

본 연구에서는 열 및 불산을 이용한 후처리 공정이 레지스트층을 이용하여 제작된 탄소나노튜브의 전자 방출 특성에 미치는 영향에 대하여 연구하였다. 전자 방출 전류는 초기에 $8V/{\mu}m$의 전계에서 $4.2{\mu}A/cm^2$의 전류에서 열 및 불산 처리 시 각각 $7.5mA/cm^2$ 및 $79mA/cm^2$로 향상되었다. 하지만 열 및 불산 처리를 동시에 실시한 경우 전류 밀도는 $426mA/cm^2$ 및 $656mA/cm^2$로 향상된 전자 방출 특성을 얻을 수 있었다. 전자 방출 특성은 처리 순서에 따라 증가하는 양이 다르게 나타났으며, 가장 우수한 전자 방출 특성은 열 처리를 먼저 시행 후, 불산 처리를 하는 공정에서 나타났다. 이는 열 처리에 의한 탄소나노튜브의 결정성의 증가와 이후 불산 처리에 의한 불소 결합의 증가에 기인함을 알 수 있었다. 강한 불소 결합은 탄소나노튜브 에미터의 전자 방출 특성의 향상에 크게 기여를 하였다.

• 한국재료학회지
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• 제14권8호
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• pp.542-546
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• 2004

We report a new fabrication process for high performance triode type CNT field emitters and their superior electrical properties. The CNT-based triode-type field emitter structure was fabricated by the conventional semiconductor processes. The keys of the fabrication process are spin-on-glass coating and trim-and-leveling of the carbon nanotubes grown in trench structures by employing a chemical mechanical polishing process. They lead to strong adhesion and a uniform distance from the carbon nanotube tips to the electrode. The measured emission property of the arrays showed a remarkably uniform and high current density. The gate leakage current could be remarkably reduced by coating of thin $SiO_{2}$ insulating layer over the gate metal. The field enhancement factor(${\beta}$) and emission area(${\alpha}$) were calculated from the F-N plot. This process can be applicable to fabrication of high power CNT vacuum transistors with good electrical performance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1609-1611
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• 2001

A large cross-section pulsed electron beam generator of cold cathode type has been developed for industrial applications, for example, waste water cleaning, flue gas cleaning, and pasteurization etc. The operational principle is based on the emission of secondary electrons from cold cathode when ions in the plasma hit the cathode, which are accelerated toward exit window by the gradient of an electric potential. The conventional electron beam generators need an electron scanning beam because the small cross section thermal electron emitter is used. The electron beam of large cross-section pulsed electron beam generator do not need to be scanned over target material because the beam cross section is large by 300$cm^2$. We have fabricated the large cross-sectional pulsed electron beam generator with the peak energy of 200keV and beam diameter of 200mm and obtained the large area electron beam in the air. The electron beam current has been investigated as a function of accelerating voltage, glow discharge current, helium pressure, distance from the exit window and radial distribution in front of the exit window.

• 대한기계학회논문집
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• 제11권2호
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• pp.331-344
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• 1987

본 연구에서는 직사각형 밀폐공간내에서 자연대류와 복사의 상호 영향에 대해 서 P-1 근사를 이용하여 수치적으로 해석하였다.밀폐공간내에서의 온도분포, 속도 분포 및 열전달계수를 구하였으며 열경계층내에서의 전도와 복사의 상호 영향에 대하 여 고찰하였다. 표면 복사만이 존재하는 경우에 대해서도 고찰함으로써 P-1 근사의 적용한계를 규명하였다. 벽면을 산광 방사 및 반사체(diffuse emitter and reflec- tor)로, 기체는 회색체(gray body)로 가정하였다. 이는 복사 물성치의 파장에 따른 변화를 고려할 때의 대단히 복잡한 계산 과정을 피할 수 있고, 현재의 이론적 수준에 비추어 복사 열전달의 열향을 정성적으로 규명하는데 타당한 가정이다.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• Bulletin of the Korean Chemical Society
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• 제32권9호
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• pp.3290-3294
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• 2011

The properties of monomeric and dimeric salen-aluminum complexes, [salen(3,5-$^tBu)_2$Al(OR)], R = $OC_6H_4-p-C_6H_6$ (H1) and R = [salen(3,5-$^tBu$)AlOPh]C$(CH_3)_2$ (H2) (salen = N,N'-bis-(salicylidene)-ethylenediamine) as host layer materials in red phosphorescent organic light-emitting diodes (PhOLEDs) were investigated. H1 and H2 exhibit high thermal stability with decomposition temperature of 330 and $370^{\circ}C$. DSC analyses showed that the complexes form amorphous glasses upon cooling of melt samples with glass transition temperatures of 112 and $172^{\circ}C$. The HOMO (ca. -5.2~-5.3 eV) and LUMO (ca. -2.3~-2.4 eV) levels with a triplet energy of ca. 1.92 eV suggest that H1 and H2 are suitable for a host material for red emitters. The PhOLED devices based on H1 and H2 doped with a red emitter, $Ir(btp)_2$(acac) (btp = bis(2-(2'-benzothienyl)-pyridinato-N,$C^3$; acac = acetylacetonate) were fabricated by vacuum-deposition and solution process, respectively. The device based on vacuum-deposited H1 host displays high device performances in terms of brightness, luminous and quantum efficiencies comparable to those of the device based on a CBP (4,4'-bis(Ncarbazolyl) biphenyl) host while the solution-processed device with H2 host shows poor performance.

• 한국재료학회지
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• 제13권5호
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• pp.333-337
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• 2003

We report a new fabrication process for carbon nanotube field emitters with high performance. The key of the fabrication process is trim-and-leveling the carbon nanotubes grown in trench structures by employing a planarization process, which leads to a uniform distance from the carbon nanotube tip to the electrode. In order to enable this processing, spin-on-glass liquid is applied over the CNTs grown in trench to have them stubborn adhesion among themselves as well as to the substrate. Thus fabricated emitters reveal an extremely stable emission and aging characteristics with a large current density of 40 ㎃/$\textrm{cm}^2$ at 4.5 V/$\mu\textrm{m}$. The field enhancement factor calculated from the F-N plot is $1.83${\times}$10^{5}$ $cm^{－1}$ , which is a very high value and indicates a superior quality of the emitter originating from the nature of open-tip and high stability of the carbon nanotubes obtained new process.