• Korean Journal of Materials Research
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• v.1 no.3
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• pp.168-174
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• 1991

Ti-silicide was deposited by sputtering the composite target($TiSi_{2.6}$) on single-Si wafers and oxide on them. The heat treatment temperatures by rapid thermal annealing(RTA) have been varied in the range of $600-850^{\circ}C$ for 20seconds. It was not until RTA temperature was $800^{\circ}C$ that a stable $TiSi_2$ was formed, and the value of resistivity of that phase was $27~29{\mu}{\Omega}-cm$, which seems a little higher than that formed by the reactive method. The result of x-ray diffraction peals showed that till $750^{\circ}C$, C49 $TiSi_2$ phase was dominant, but at $800^{\circ}C$, at last, the phase was transformed into a stable C54 $TiSi_2$ phase. And, the result of x-ray photoeletron spectroscopy(XPS) measurements showed that the composition ratio of Ti and Si was 2 1 in the case of specimens treated at $800^{\circ}C$, The surface roughness of $TiSi_2$, which was condidered a weak point, was improved to a superior value of $17{\pm}1nm$, therefore increasing the possibility of applying $TiSi_2$ to semiconductor devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.169-175
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• 2014

Digital ink-jet printing system has many advantages such as fast and fine printing of various images, high efficiency and low cost process. Generally digital ink-jet printing requires ceramic pigments of cyan, magenta, yellow and black with thermal and glaze stability above $1000^{\circ}C$ for the application of porcelain product design. In this study, pink-red colored $CaO-SnO_2-Cr_2O_3-SiO_2$ pigment was synthesized using solid state reaction. The synthesis conditions of $Ca(Cr,Sn)SiO_5$ pigment such as annealing temperature, amount of mineralizer and non-stoichiometric composition were optimized. Crystal structure and morphology of the obtained $Ca(Cr,Sn)SiO_5$ pigment were analyzed using XRD, SEM, PSA, FT-IR and effect of Cr substitution on the pigment color was analyzed using Uv-vis. spectrophotometer and CIE $L^*a^*b^*$ measurement.

• Bulletin of the Korean Chemical Society
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• v.33 no.9
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• pp.3061-3070
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• 2012

Novel 2-hexylthieno[3,2-b]thiophene-containing conjugated molecules have been synthesized via a reduction reaction using tin chloride in an acidic medium. They exhibited good solubility in common organic solvents and good self-film and crystal-forming properties. The single-crystalline objects were fabricated by a solvent slow diffusion process and then were employed for fabricating field-effect transistors (FETs) along with thinfilm transistors (TFTs). TFTs made of 5 and 6 exhibited carrier mobility as high as 0.10-0.15 $cm^2V^{-1}s^{-1}$. The single-crystal-based FET made of 6 showed 0.70 $cm^2V^{-1}s^{-1}$ which was relatively higher than that of the 5-based FET (${\mu}=0.23cm^2V^{-1}s^{-1}$). In addition, we fabricated organic photovoltaic (OPV) cells with new 2-hexylthieno [3,2-b]thiophene-containing conjugated molecules and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester ($PC_{61}BM$) without thermal annealing. The ternary system for a bulk heterojunction (BHJ) OPV cell was elaborated using $PC_{61}BM$ and two p-type conjugated molecules such as 5 and 7 for modulating the molecular energy levels. As a result, the OPV cell containing 5, 7, and $PC_{61}BM$ had improved results with an open-circuit voltage of 0.90 V, a short-circuit current density of 2.83 $mA/cm^2$, and a fill factor of 0.31, offering an overall power conversion efficiency (PCE) of 0.78%, which was larger than those of the devices made of only molecule 5 (${\eta}$~0.67%) or 7 (${\eta}$~0.46%) with $PC_{61}BM$ under identical weight compositions.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.129-129
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• 2016

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which needs transfer to desired substrates for various applications. However, the transfer steps are not only complicated but also inevitably induce defects, impurities, wrinkles, and cracks of graphene. Furthermore, the direct synthesis of graphene on dielectric surfaces has still been a premature field for practical applications. Therefore, cost effective and concise methods for transfer-free graphene are essentially required for commercialization. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer. In order to fabricate 100 nm thick NiC layer on the top of $SiO_2/Si$ substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr with various Ar : $CH_4$ gas flow ratio and the 200 W DC input power was applied to a Ni target at room temperature. Then, the sample was annealed under 200 sccm Ar flow and pressure of 1 Torr at $1000^{\circ}C$ for 4 min employing a rapid thermal annealing (RTA) equipment. During the RTA process, the carbon atoms diffused through the NiC layer and deposited on both sides of the NiC layer to form graphene upon cooling. The remained NiC layer was removed by using a 0.5 M $FeCl_3$ aqueous solution, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. In order to confirm the quality of resulted graphene layer, Raman spectroscopy was implemented. Raman mapping revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Additionally, sheet resistance and transmittance of the produced graphene were analyzed by a four-point probe method and UV-vis spectroscopy, respectively. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.771-780
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• 2001

It is indispensable to use the process and device simulation tool in order to analyze accurately the electrical characteristics of ULSI CMOS devices, in addition to developing and manufacturing those devices. The 3D Monte Carlo (MC) simulation result is not efficient for large-area application because of the lack of simulation particles. In this paper is reported a new efficient simulation strategy for 3D MC ion implantation into large-area application using the 3D MC code of TRICSI(TRansport Ions into Crystal Silicon). The strategy is related to our newly proposed split-trajectory method and ion-splitting method(ion-shadowing approach) for 3D large-area application in order to increase the simulation ions, not to sacrifice the simulation accuracy for defects and implanted ions. In addition to our proposed methods, we have developed the cell based 3D interpolation algorithm to feed the 3D MC simulation result into the device simulator and not to diverge the solution of continuous diffusion equations for diffusion and RTA(rapid thermal annealing) after ion implantation. We found that our proposed simulation strategy is very computationally efficient. The increased number of simulation ions is about more than 10 times and the increase of simulation time is not twice compared to the split-trajectory method only.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.70-74
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• 2009

Effect of the processing variables on the formation of $Pb(Sc_{1/2}Nb_{1/2})O_3$(hereafter PSN) thin layers prepared on Pt(111)/Ti/$SiO_2$/Si substrates using the sol-gel and the spin coating method has been studied. After each deposition, the coated films were heated at $370^{\circ}C$ for 5 min. Then they were finally sintered at temperature range of $600{\sim}700^{\circ}C$ by RTA(rapid thermal annealing). The final multilayered films showed a (111) preferred orientation. On a while, the layer-by-layer crystallization of multilayered amorphous thin films without the intermediate heating exhibited a (100) preferred orientation. In case of heat treatment in the tube furnace with the heating rate of $4^{\circ}C/min$, (100) and (111) oriented thin layers were formed simultaneously. The microstructure of the deposited films were dense and crack-free with thickness of 300nm, irrespective of the processing variables.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.242-247
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• 2000

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3(PNZST)$ thin films were deposited by RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3(LSCO)/Pt/Ti/SiO_2/Si$ substrate using a PNZST target with excess PbO of 10 mole%. The thin films deposited at substrate temperature of $500^{\circ}C$, and at RF power of 80W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at $650^{\circ}C$ for 10 seconds in air exhibited the good structures and electrical properties. The fabricated PNZST capacitor had a remanent polarization value of about $20\;{\mu}C/cm^2$ and coercive field of about 50 kV/cm. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.378-387
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• 1994

To improve the properties of $PbTiO_3$ thin films successfully grown by thermal diffusion of 3 component layers of $Ti0_2/Pb/TiO_2(900{\AA}/900{\AA}/900{\AA})$ in preceding research, 3, 5, 7, 9, and 11 multilayer structures $(TiO_2/Pb/.../Tio_2)$ with thinner component layer of $200~300 {\AA}$ thick were deposited on Si substrate by RF sputtering, which were followed by RTA to form $PbTiO_3$ thin films. As a result, $PbTiO_3$ single phase was formed above $500^{\circ}C$. When the thickness of component layer reduced and the number of component layers increased, suppression of Pb-silicate and voids formation resulted in relatively sharp interfaces and the film composition became more homogeneous. Relative dielectric constants in MIM structure were independent of the annealing condition, but they increased with increasing thickness of the $PbTiO_3$ thin films. The maximum breakdown field in MIS structure reached 150kV/cm.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.111-114
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• 2011

As a growth-template of ZnO nanorods (NR), a hexagonal $\beta-Ni(OH)_2$ nanosheet (NS) was synthesized with the low temperature hydrothermal process and its microstructure was investigated using a high resolution scanning electron microscope and transmission electron microscope. Zinc nitrate hexahydrate was hydrolyzed by hexamethylenetetramine with the same mole ratio and various temperatures, growth times and total concentrations. The optimum hydrothermal processing condition for the best crystallinity of hexagonal $\beta-Ni(OH)_2$ NS was determined to be with 3.5 mM at $95^{\circ}C$ for 2 h. The prepared $Ni(OH)_2$ NSs were two dimensionally arrayed on a substrate using an air-water interface tapping method, and the quality of the array was evaluated using an X-ray diffractometer. Because of the similarity of the lattice parameter of the (0001) plane between ZnO (wurzite a = 0.325 nm, c = 0.521 nm) and hexagonal $\beta-Ni(OH)_2$ (brucite a = 0.313 nm, c = 0.461 nm) on the synthesized hexagonal $\beta-Ni(OH)_2$ NS, ZnO NRs were successfully grown without seeds. At 35 mM of divalent Zn ion, the entire hexagonal $\beta-Ni(OH)_2$ NSs were covered with ZnO NRs, and this result implies the possibility that ZnO NR can be grown epitaxially on hexagonal $\beta-Ni(OH)_2$ NS by a soluble process. After the thermal annealing process, $\beta-Ni(OH)_2$ changed into NiO, which has the property of a p-type semiconductor, and then ZnO and NiO formed a p-n junction for a large area light emitting diode.