• Title/Summary/Keyword: the pulse meter-analyzer

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The statistical analysis for cognizance on the Chinese oriental medical doctor of the pulse meter-analyzer (중의사의 맥진기 인식에 대한 통계 분석 연구)

  • Kim, Gyeong-Cheol;Kim, Jong-Hwan;Shin, Woo-Jin;Lee, Hai-Woong;Park, Ju-Yeon;Hong, Sang-Min;Doo, Seung-Hee;Kang, Hee-Jung;Yingri, Zhao
    • The Journal of the Society of Korean Medicine Diagnostics
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    • v.13 no.2
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    • pp.88-116
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    • 2009
  • Background : EBM (the evidence based medicine) is the direction of the development for oriental medicine. The pulse meter-analyzer is the important part to standardize the pulse diagnosis. When we set up the direction of the study on the pulse meter-analyzer, the awereness about the pulse meter and analyzer of the clinical oriental medical doctors as consumers is very important. Objectives : In order to prepare for the mutual study and the export strategy on the pulse meter-analyzer of Korea and China, the attitude of the study and the grasp of the awereness about the pulse meter-analyzer of the Chinese medical doctors are very important. Methods : We developed the several items as the important factor of the development of the pulse meter and analyzer. They were translated by chinese medical doctor. The investigation for demend was conducted during 3 months in Guangzhou City, Guangdong Province, China. The results of the investigation was done the statistical method of frequency analysis, Chi-squared test, correspondence analysis. Results : The most important differentiation of symptom is the symptom of JANG-BU(臟腑). The method of the utility in the pulse diagnosis is Chon-Gu (寸口) pulse diagnosis and the research on Chon-Kwan-Cheok(寸關尺) is the most important measurement factor. And the typical the old pulse is the little-fine weak pulse. The pulse meter-analyzer is most suitable to the diagnosis of the hypertension and the arteriosclerosis. Conclusion : The development of the pulse analyzer including the requests of Korean and Chinese medical doctors is very important. Specially the researches on the influence factors of the traditional diagnosis and the environment of the measurement are important for developing the pulse analyze.

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A Study on the Research Demands for the Pulse Analyzer (맥진기 연구개발에 대한 수요조사)

  • Kim, Gyeong-Cheol;Kim, Jong-Hwan;Shin, Woo-Jin;Lee, Hai-Woong;Kang, Hee-Jung
    • Journal of Society of Preventive Korean Medicine
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    • v.13 no.1
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    • pp.29-40
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    • 2009
  • The demand of research for the development of pulse meter and analyzer by the examination questionnaire made from repeated preliminary investigations. Which was presented in the exhibition KIMES 2008, it's has been proved to be practical. 159 people(oriental medical doctor) sent in the question papers and selected the double answers in the relevant question. At the time of the development of the pulse meter and analyzer, we put the investigation for oriental medical doctor's demands in practice and found the following results. The development of the pulse analyzer is getting more important for modernization of oriental medicine. The purpose of this study was to find out the research needs for the pulse analyzer considering the practical use in the oriental medical clinics. A survey was conducted at the KIMES 2008 exhibition with a set of questionnaires. We collected the data from 159 oriental medical doctors who attended the exhibition, and we found following results. The more oriental doctors did not think the diagnostic devices were important in their clinical practices. Most responders preferred to use the Chon-Kwan-Cheok pulse diagnosis. To find out the mechanism of the pulse diagnosis and to standardize it, the clinical data base containing the results of the pulse diagnosis and the patten discrimination of each patient should be established. In conclusion, the researches on the standardization of Chon-Kwan-Chuk pulse diagnosis including the measurement techniques and the pulse-pattern correlations are very important for developing the pulse analyzer.

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Study on the Waveform Analysis of Radial Artery Pulse Diagnosis Using Pulse Meter and Analyzer - the Waveform Analysis of Left KWAN Pulse Dignosis - (맥상기를 통한 요골동맥 맥진법의 맥파분석 - 좌관부위 맥파요인을 중심으로 -)

  • Kim, Gyeong-Cheal;Lee, Jeong-Won;Ryu, Kyeong-Ho;Park, Dong-Il;Shin, Woo-Jin;Kang, Hee-Jung
    • Journal of Physiology & Pathology in Korean Medicine
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    • v.23 no.1
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    • pp.186-191
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    • 2009
  • In the study on the waveform analysis of radial artery pulse diagnosis, we need to establish fundaments of contemporary pulse diagnosis research. As we will to do experimental research on the difference of pulse waveform on the radial artery with applied variations of pressure(5 stage-pressure) and measuring position(CHON, KWAN, CHEOG). First of all, in this research, we did the experiment of the study on the waveform analysis of radial artery(left KWAN) pulse dignosis by using 3 dimension pulse meter and analyzer (3D MAC). As a result. we extracted the seven measurement fluents : energy(E), size of cycle(h1), size of reflection cycle(h2), time of reflection cycle(t2), time of contraction (t4), width of cycle(w), area of waveform(A) by the statistically reasonable differences. We expect that the seven measurement fluents contribute to divide the situation through the results of waveform analysis of radial artery.

그래핀 전극을 가진 $V_3Si$ 나노입자 저항변화 메모리 소자의 전기적 특성연구

  • Kim, Dong-Uk;Lee, Dong-Uk;Jo, Seong-Guk;Kim, Eun-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.353-353
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    • 2013
  • 최근 고밀도 메모리 반도체의 재료와 빠른 응답을 요구하는 나노입자를 이용한 비휘발성 메모리 소자의 제작에 대한 연구가 활발히 진행되고 있다. 특히, 비휘발성 메모리 소자 중 하나인 저항 변화 메모리 소자는 인가되는 전압에 따라 저항이 급격히 변화하여 적어도 서로 다른 두 저항 상태를 스위칭할 수 있는 물질을 이용하는 소자이다. 따라서 본 연구에서는 화합물 중에서 비휘발성 메모리 장치의 전기적 특성을 향상시킬 수 있는 실리사이드 계열의 바나듐 실리사이드($V_3Si$) 박막을 열처리 과정을 통하여 수 nm 크기의 나노입자로 제작하여, 그래핀을 하부 전극으로 하는 저항 변화 메모리 소자를 제작하였다. p-type (100) 실리콘 기판에 단일층으로 형성되어 있는 그래핀 상에 약 10 nm 두께의 저항 변화층($SiO_2$)을 각각 초고진공 스퍼터링 방법으로 성장시킨 후 $V_3Si$ 나노입자를 제작하기 위해서 $V_3Si$ 금속 박막을 스퍼터링 방법으로 4~6 nm의 두께로 저항 변화층 사이에 증착시켰으며, 급속 열처리 방법으로 질소 분위기에서 $800^{\circ}C$로 5초 동안 열처리하여 $V_3Si$ 나노 입자를 형성하였다. 마지막으로 200 nm 두께의 Pt을 증착하였다. 하부 전극으로 형성되어 있는 그래핀은 라만 분광법을 이용하여 확인하였으며, 제작된 소자의 전기적인 측정은 Agilent E4980A LCR meter, 1-MHz HP4280A와 HP 8166A pulse generator, HP4156A precision semiconductor parameter analyzer을 이용하여 전기적인 특성을 확인하였다.

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Dynamic Characteristics of Pressure Propagation According to Boundary Condition Changes in a Transmission Line (경계조건변화에 따른 동력전달관로의 동특성)

  • 나기대;유영태;김지환
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.11 no.6
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    • pp.75-82
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    • 2002
  • Design for a quiet operation of fluid power system requires the understanding of noise and vibration characteristics of the system. It's not easy to analyze noise problem in hydraulic cylinder used in typical actuator Because they've got complex fluid dynamics. One of the fundamental problems associated with the hydraulic system is the pulsating flow in pipe lines, which can be tackled by the analysis under simplifying assumptions. The present study focuses on theoretic analysis and experimental study on the dynamics of laminar pulsating flow in a circular pipe. We analyze the propagation characteristics of the pressure pulse within a hydraulic pipe line taking into account the pulsating flow frequency variation. We also measure instantaneous pressure pulses within pipe line to identify the transfer functions. We conduct series of experiments to investigate the propagation characteristics of pressure pulse for various pressure of pulsating flow. The working fluid of the present study is ISO VG46 and the temperature ranges from 20 to $60^{\circ}$ with normal pressure at 4000kPa. The flow rate is measured by using an ultrasonic flow meter. Pressures at fixed upstream and downstream positions are measured concurrently. The electric signals of the pressure sensor are stored and analyzed using a system analyzer(PKE 983 series). The frequency is varied in the range of 10~500Hz. The Reynolds number is kept below 2,000. In the present study, boundary condition was varied by installing a surge tank and an orifice at the end of pipe. Experimental and theoretical results were compared each other under various boundary conditions.

Electrical characteristics of SiC thin film charge trap memory with barrier engineered tunnel layer

  • Han, Dong-Seok;Lee, Dong-Uk;Lee, Hyo-Jun;Kim, Eun-Kyu;You, Hee-Wook;Cho, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.255-255
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    • 2010
  • Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

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V3Si 나노입자 메모리소자의 열적안정성 및 전하누설 근원분석

  • Kim, Dong-Uk;Lee, Dong-Uk;Jo, Seong-Guk;Kim, Eun-Gyu;Lee, Se-Won;Jeong, Seung-Min;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.302-302
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    • 2012
  • 최근 비 휘발성 메모리 시장의 확대와 수요가 많아지면서, 비휘발성 메모리 소자의 제작에 대한 연구가 활발히 진행되고 있다. 특히, 실리사이드 나노입자를 적용한 소자는 현 실리콘 기반의 반도체 공정의 적용이 용이하다. 따라서 본 연구에서는 실리사이드 계열의 화합물 중에서 일함수가 4.63 eV인 Vanadium silicide (V3Si) 나노입자 메모리소자를 제작하여 전기적 특성과 열 안정성에 대하여 알아보았다. p-Si기판에 약 6nm 두께의 SiO2 터널층을 건식 산화 방법으로 성장시킨 후 V3Si 나노입자를 제작하기 위해서 V3Si 금속박막을 스퍼터링 방법으로 4 nm~6 nm의 두께로 터널 절연막 위에 증착시켰다. 그리고 컨트롤 절연막으로 SiO2를 초고진공 스퍼터를 이용하여 50 nm 증착하였고, 급속 열처리 방법으로 질소 분위기에서 $800^{\circ}C$의 5초 동안 열처리하여 V3Si 나노 입자를 형성하였다. 마지막으로 200 nm두께의 Al을 증착하고, 리소그래피 공정을 통하여 채널 길이와 너비가 각각 $2{\mu}m$, $5{\mu}m$, $10{\mu}m$를 가지는 트랜지스터를 제작하였다. 제작된 시편의 V3Si 나노입자의 크기와 균일성은 투과 전자 현미경으로 확인하였고, 후 열처리 공정 이후 V3Si의 존재여부의 확인을 위해서 X-ray 광전자 분광법의 표면분석기술을 이용하여 확인하였다. 소자의 전기적인 측정은 Agilent E4980A LCR meter, 1-MHz HP4280A와 HP 8166A pulse generator, HP4156A precision semiconductor parameter analyzer을 이용하여 측정온도를 $125^{\circ}C$까지 변화시키면서 전기적인 특성을 확인하였다. 본 연구에서는 온도에 선형적 의존성을 가지는 전하누설 모델인 T-model 을 이용하여 나노입자 비휘발성 메모리소자의 전하누설 근원을 확인한 후, 메모리 소자의 동작 특성과의 물리적인 연관성을 논의하였다. 이를 바탕으로 나노입자 비휘발성 메모리소자의 열적안정성을 확보하고 소자 특성향상을 위한 최적화 구조를 제안하고자 한다.

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