• Proceedings of the Korea Concrete Institute Conference
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• 2008.04a
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• pp.1105-1108
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• 2008

This paper investigated measures of spalling prevention and mechanism to secure stability of subjected to a fire circumstance. The results were summarized as following. 1) There were 4 kinds of methods for spalling prevention, such as declining percentage of water content and cement water ratio, isolating from high temperature with fire proof covering, giving lateral resistance stress, and discharging vapor pressure using fibers. 2) It was confirmed that methods using fibers to a new construction and fire proof covering to a existing construction on the basis of investigation for the spalling mechanism through the existing theory of spalling and a new theory of WPB.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.1C
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• pp.21-27
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• 2009

We present an efficient exponentiation algorithm for a finite field $GF(2^n)$ determined by an optimal normal basis of type II using signed digit representation of the exponents. Our signed digit representation uses a non-adjacent form (NAF) for $GF(2^n)$. It is generally believed that a signed digit representation is hard to use when a normal basis is given because the inversion of a normal element requires quite a computational delay. However our result shows that a special normal basis, called an optimal normal basis (ONB) of type II, has a nice property which admits an effective exponentiation using signed digit representations of the exponents.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.580-585
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• 2004

Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.118-119
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• 2005

PRAM (Phase Change Random Access Memory) is well known to use reversible phase transition between amorphous (high resistance) and crystalline (low resistance) states of chalcogenide thin film by electrical Joule heating. In this paper, we introduce a stack-type PRAM device with a novel GST/TiAlN structures (GST and a heating layer of TiAlN), and report its electrical switching properties. XRD analysis result of GST thin film indicates that the crystallization of the GST film start at about $200^{\circ}C$. Electrical property results such as I-V & R-V show that the phase change switching operation between set and reset states is observed, as various input electrical sources are applied.

• Journal of Radiation Industry
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• v.8 no.1
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• pp.17-22
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• 2014

In this study, we prepared CdTe/CdS solar cells using a thermal vacuum evaporation method. In particular, $CdCl_2$ treatment was attempted using this same method at $400^{\circ}C$ for 30 min. The prepared CdTe/CdS solar cells were investigated using Fouier transform infrared spectrometry (FTIR), field emission scanning electron microscopy (FE-SEM), and a solar simulator system including light absorption properties, morphological properties, and power conversion efficiency (PCE). In addition, we investigated the gamma-irradiation treatment at dose rates of 0 Gy, 500 Gy, 1 kGy, 10 kGy, and 30 kGy. The characteristics of gamma-irradiation treatment were studied based on the same method described above. In particular, it showed increased values as 0.826% higher than the non-irradiation of 0.448% from PCE analysis.

• Journal of the Society of Naval Architects of Korea
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• v.47 no.5
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• pp.719-724
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• 2010

Thousands of passengers and crews are onboard a cruise ship and there are many cabins and large public spaces such as atria and theaters. Therefore it is easy to cause a huge loss of life and damage to property when accidents happen at sea. To improve the safety of passenger ships, in October 2007, IMO proposed MSC.1/Circ.1238 on guidelines for evacuation analysis and recommended its use. However, this guideline is difficult to apply because ship designers need to get many pieces of information from CAD drawings such as width and length of stairs and corridors and manually calculate the evacuation time. In this paper, for practical application of the guidelines, an evacuation time calculation program is developed using AutoCAD .NET API library and C Sharp language.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.1
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• pp.8-12
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• 1999

$\textrm{WO}_3$ semiconductive film, which is known to have a sensitivity on $\textrm{NO}_X$ gas was prepared on 8YSZ (8% Yttria stabilized $\textrm{ZrO}_2$) ionic conductor substrate that has oxygen ion pumping effect. Microstructure and electrical properity, especially $\textrm{NO}_X$ sensitivity as a function of DC voltage applied to 8YSZ substrate was examined. When the $\textrm{WO}_3$ film was annealed, it showed amorphous structure, while crystallization was occurred at $600^{\circ}$C revealing orthorhombic phase of $\textrm{WO}_3$. As the annealing temperature increases, (111) and (001) peaks of $\textrm{WO}_3$ film was enhanced. At $400^{\circ}C$ when DC voltage was applied, comparing with no DC bias, more stable and large response characteristics was showed, and the best sensitivity was observed at 2V. Recovery characteristics of NO gas was much better that that of $\textrm{NO}_2$ gas.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.499-503
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• 2011

Recently, variety of organic and inorganic hybrid materials have recently investigated as alternative routes to SiOC, $SiO_2$ thin film formation at low temperatures for applications in electronic ceramics. Specially, silicon based polymers, such as polycarbosilane, polysilane and polysilazane derivatives have been studied for use in electronic ceramics and have been applied as dielectric or insulating materials. In this study, Polycarbosilane(PCS), which Si-$CH_2$-Si bonds build up the backbone of the polymer, has been investigated as low-k materials using a solution process. After heat treatment at 350$^{\circ}C$ under $N_2$ atmosphere, chemical composition and dielectric constant of the thin film were $SiO_{0.27}C_{1.94}$ and 1.2, respectively. Mechanical property measured using nanoindentor shows 1.37 GPa.

• Journal of the Korean Chemical Society
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• v.53 no.5
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• pp.542-546
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• 2009

Recently, silver has been applied to various fields due to antimicrobial property and high conductivity. We manufactured high-performance ophthalmic material containing silver which could protect eye from environmental factors. We mixed $AgNO_3$ with conventional contact lens material. And then we copolymerized at 70 ${^{\circ}C}$ for 40 minutes under water bath, and estimated antimicrobial activity and physical properties. We used solid culture and liquid culture medium for antimicrobial test. The results of contact lens containing silver showed good antibiosis. In case of physical properties, the results showed 32.35%(water content) and 88.34% (visible transmittance) for each. We judged that we made the copolymer with antimicrobial and physical properties which is suitable for conventional contact lens.