DOI QR코드

DOI QR Code

Preparation and Characterization of Low k Thin Film using a Preceramic Polymer

Preceramic Polymer를 이용한 저유전박막 제조 및 특성 분석

  • Kim, Jung-Ju (Energy Materials Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Jung-Hyun (Energy Materials Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Yoon-Joo (Energy Materials Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Kwon, Woo-Teck (Energy Materials Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Soo-Ryong (Energy Materials Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Choi, Doo-Jin (Department of Materials Science and Engineering, Yonsei University) ;
  • Kim, Hyung-Sun (School of Materials Science and Engineering, Inha University) ;
  • Kim, Young-Hee (Energy Materials Center, Korea Institute of Ceramic Engineering and Technology)
  • 김정주 (한국세라믹기술원 에너지소재센터) ;
  • 이정현 (한국세라믹기술원 에너지소재센터) ;
  • 이윤주 (한국세라믹기술원 에너지소재센터) ;
  • 권우택 (한국세라믹기술원 에너지소재센터) ;
  • 김수룡 (한국세라믹기술원 에너지소재센터) ;
  • 최두진 (연세대학교 신소재공학부) ;
  • 김형순 (인하대학교 신소재공학부) ;
  • 김영희 (한국세라믹기술원 에너지소재센터)
  • Received : 2011.10.07
  • Accepted : 2011.11.30
  • Published : 2011.11.30

Abstract

Recently, variety of organic and inorganic hybrid materials have recently investigated as alternative routes to SiOC, $SiO_2$ thin film formation at low temperatures for applications in electronic ceramics. Specially, silicon based polymers, such as polycarbosilane, polysilane and polysilazane derivatives have been studied for use in electronic ceramics and have been applied as dielectric or insulating materials. In this study, Polycarbosilane(PCS), which Si-$CH_2$-Si bonds build up the backbone of the polymer, has been investigated as low-k materials using a solution process. After heat treatment at 350$^{\circ}C$ under $N_2$ atmosphere, chemical composition and dielectric constant of the thin film were $SiO_{0.27}C_{1.94}$ and 1.2, respectively. Mechanical property measured using nanoindentor shows 1.37 GPa.

Keywords

References

  1. D. R. Coat, S. V. Nguyen, and D. V. Podlesnik, "Low-temperature Chemical Vapor Deposition Processes and Dielectrics for Microelectronic Circuit Manufacturing at IBM," IBM J. Res. Development, 39 [4] 437-64 (1995). https://doi.org/10.1147/rd.394.0437
  2. A. Rey, D. Lafond, J. M. Mirabel, and M. F. Coster, "A Double Level Aluminum Interconnection Technology with Spin on Glass Based Insulator," Proceedings of the Third International VMIC, 491-99 (1986).
  3. C. Case and A. Kornblit, "Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates," Low Dielectric Constant Materials and Interconnects Workshop Proc. (SEMATECH), 387 (1996).
  4. S. H. Cho and D. J. Choi "The Study of Dielectric Constant Change of ${\alpha}$-SiC:H Films Deposited by Remote PECVD with Low Deposition Temperatures," J. Kor. Phys. Soc., 55 [5] 1920-24 (2009). https://doi.org/10.3938/jkps.55.1920
  5. P. H. Townsend, S. Martin, J. P. Godschalx, D. R. Romer, D. W. Smith Jr., D. Castillo, R. DeVries, G. Buske, N. Rondan, S. Froelicher, J. Marshall, E. O. Shaffer, and J.-H Im, "SiLk Polymer Coating with Low Dielectric Constant and High Thermal Stability for ULSI Interlayer Dielectric," Mater. Res. Soc. Symp. Proc., 9 476 (1997)
  6. C. V. Nguyen, K. R. Carter, C. J. Hawker, J. L. Hedrick, R. L. Jaffe, R. D. Miller, J. F. Remenar, H. W. Rhee, P. M. Rice, M. F. Toney, M. Trollsas, and D. Y. Yoon, "Low Dielectric Nanoporous Organosilicate Films Prepared via Inorganic/ Organic Polymer Hybrid Templates," Chem. Mater., 11 3080-85 (1999). https://doi.org/10.1021/cm990114d
  7. R. F. Cook and E. G. Liniger, "Kinetics of Indentation Cracking in Glass" J. Am. Ceram. Soc., 76 1096-105 (1993). https://doi.org/10.1111/j.1151-2916.1993.tb03726.x
  8. H. W. Su and W. C. Chen "Preparation of Nanoporous Poly (Methyl Silsesquioxane) Films using Core-shell Silsesquioxane as Porogen," Mater. Chem. Phys., 114 736-41 (2009). https://doi.org/10.1016/j.matchemphys.2008.10.035
  9. Y. J. Lee, S. R. Kim, W. T. Kwon, and Y. H. Kim "Synthesis and Characterization of Novel Preceramic Polymer for SiC," J. Mater Sci., 45 1025-31 (2010) https://doi.org/10.1007/s10853-009-4034-2
  10. D. H. Riu, S.J. Kim, D. G. Shin, H. R. Kim, and Y. H. Kim "SiC Fiber Derived from the Polycarbosilane Prepared from the Catalytic Process," J. Ceram. Soc. Jpn., 112 [5] S432-35 (2004).
  11. Y. Yu, H. Jung, J. Lee, S. Hwang, Y. Kim, and H. Kim "Silicon Dioxide thin Film Derived from Polyphenylcarbosilane Under an Oxidizing Atmosphere," Thin Solid Films, 519 5706-11 (2011). https://doi.org/10.1016/j.tsf.2011.03.121
  12. H. Q. LY, R. Taylor, R. J. Day, and F. Heatley "Conversion of Polycarbosilane (PCS) to SiC-based Ceramic Part 1. Characterization of PCS and Curing Products," J. Mater. Sci., 36 4037-43 (2001). https://doi.org/10.1023/A:1017942826657

Cited by

  1. SiOC Anode Material Derived from Poly(phenyl carbosilane) for Lithium Ion Batteries vol.50, pp.6, 2013, https://doi.org/10.4191/kcers.2013.50.6.480
  2. Room temperature reaction of polycarbosilane with iodine under different atmospheres for polymer-derived silicon carbide fibres vol.5, pp.102, 2015, https://doi.org/10.1039/C5RA11009B
  3. Flexural Strength of Polysiloxane-Derived Strontium-Doped SiOC Ceramics vol.52, pp.1, 2015, https://doi.org/10.4191/kcers.2015.52.1.61
  4. Preparation of Si(Al)ON Precursor Using Organoaluminum Imine and Poly (Phenyl Carbosilane), and the Compositional Change of the Film with Different Heat Treatment Condition vol.52, pp.4, 2015, https://doi.org/10.4191/kcers.2015.52.4.243
  5. Solvent Vapor Annealing Effects in Contact Resistances of Zone-cast Benzothienobenzothiophene (C8-BTBT) Transistors vol.53, pp.4, 2016, https://doi.org/10.4191/kcers.2016.53.4.411