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http://dx.doi.org/10.4191/kcers.2011.48.6.499

Preparation and Characterization of Low k Thin Film using a Preceramic Polymer  

Kim, Jung-Ju (Energy Materials Center, Korea Institute of Ceramic Engineering and Technology)
Lee, Jung-Hyun (Energy Materials Center, Korea Institute of Ceramic Engineering and Technology)
Lee, Yoon-Joo (Energy Materials Center, Korea Institute of Ceramic Engineering and Technology)
Kwon, Woo-Teck (Energy Materials Center, Korea Institute of Ceramic Engineering and Technology)
Kim, Soo-Ryong (Energy Materials Center, Korea Institute of Ceramic Engineering and Technology)
Choi, Doo-Jin (Department of Materials Science and Engineering, Yonsei University)
Kim, Hyung-Sun (School of Materials Science and Engineering, Inha University)
Kim, Young-Hee (Energy Materials Center, Korea Institute of Ceramic Engineering and Technology)
Publication Information
Journal of the Korean Ceramic Society / v.48, no.6, 2011 , pp. 499-503 More about this Journal
Abstract
Recently, variety of organic and inorganic hybrid materials have recently investigated as alternative routes to SiOC, $SiO_2$ thin film formation at low temperatures for applications in electronic ceramics. Specially, silicon based polymers, such as polycarbosilane, polysilane and polysilazane derivatives have been studied for use in electronic ceramics and have been applied as dielectric or insulating materials. In this study, Polycarbosilane(PCS), which Si-$CH_2$-Si bonds build up the backbone of the polymer, has been investigated as low-k materials using a solution process. After heat treatment at 350$^{\circ}C$ under $N_2$ atmosphere, chemical composition and dielectric constant of the thin film were $SiO_{0.27}C_{1.94}$ and 1.2, respectively. Mechanical property measured using nanoindentor shows 1.37 GPa.
Keywords
Preceramic polymer; SiOC thin film; Low K; Solution process;
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