• Journal of the Korean Vacuum Society
• /
• v.17 no.4
• /
• pp.317-321
• /
• 2008

The $0.65Pb(Mg_{1/3}Ta_{2/3})O_3-0.35PbTiO_3$ (PMT-PT)ceramics were near morphotropic phase boundary. The dielectric constant, the loss, and pyroelectric coefficient of the ceramics were measured as a function of temperature ($25^{\circ}C\;{\sim}\;250^{\circ}C$). The dielectric constant, the loss, and the pyroelectric coefficient could be improved with the addition of small amounts of $ZrO_2$ up to 0.2 mol%. The dielectric and pyroelectric peak temperature are slightly shifted to lower temperatrues with the addition of amount of $ZrO_2$.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.2
• /
• pp.20-23
• /
• 2003

Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

• Korean Journal of Materials Research
• /
• v.25 no.6
• /
• pp.288-292
• /
• 2015

New lead-free piezoelectric ceramics $0.96[\{Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}\}_{1-x}La_x(Ti_{1-y}Nb_y)O_3]-0.04SrTiO_3$ (BNKT-ST-LN, where $x=y=0.00{\leq}(x=y){\leq}0.015)$ were synthesized using the conventional solid-state reaction method. Their crystal structure, microstructure, and electrical properties were investigated as a function of the La and Nb (LN) content. The X-ray diffraction patterns revealed the formation of a single-phase perovskite structure for all the LN-modified BNKT-ST ceramics in this study. The temperature dependence of the dielectric curves showed that the maximum dielectric constant temperature ($T_m$) shifted towards lower temperatures and the curves became more diffuse with an increasing LN content. At the optimum composition (LN 0.005), a maximum value of remnant polarization ($33C/cm^2$) with a relatively low coercive field (22 kV/cm) and high piezoelectric constant (215 pC/N) was observed. These results indicate that the LN co-modified BNKT-ST ceramic system is a promising candidate for lead-free piezoelectric materials.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1289-1291
• /
• 1994

Dielectric properties of $C_{22}$-Quinolium(TCNQ) Langmuir-Blodgett (LB) films were studied as a function of frequency(10Hz-13MHz) and annealing temperature($20{\sim}240^{\circ}C$). A complex dielectric constant ${\epsilon}^*={\epsilon}'-i{\epsilon}"$, in general, shows the frequency dependence of orientational polarization in the measured frequency range. A dielectric permittivity ${\epsilon}'$ at 10Hz is around 8.2 and decreases very slowly as the frequency increases up to 1 MHz, and then suddenly drops above this frequency, while a dielectric loss factor ${\epsilon}"$ reaches a maximum near 1 MHz. Its annealing temperature dependence at 10Hz shows that ${\epsilon}'$ and ${\epsilon}"$ increase as the temperature increases upto $180^{\circ}C$, even though there is a little drop near $120{\sim}160^{\circ}C$. Both ${\epsilon}'$ and ${\epsilon}"$ drop quickly above $180^{\circ}C$. which may be thought of a destruction of the LB films. Another fact of the annealing temperature dependence of the dielectric constant is an occurrence of the new dielectric dispersion below 100Hz. This low frequency dispersion is getting clear above $80^{\circ}C$.

• Applied Science and Convergence Technology
• /
• v.26 no.4
• /
• pp.70-73
• /
• 2017

The dielectric constant and loss of poling/non-poling was measured in the $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ samples. The addition of $La^{3+}$ to the $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ did not cause a large change in grain size. But the addition of $La^{3+}$ did show transition temperature, which shifted toward low temperature in the $Pb[(Mg_{1/3}Ta_{2/3})Zr]O_3$ systems. In addition, the dielectric and pyroelectric properties (${\varepsilon}{\sim}20000$, $p{\sim}0.03C/m^2K$) of this system using $La^{3+}$ have been greatly improved. Pyroelectrics $Pb_{0.97}La_{0.02}(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ system was found to have a relatively high ferroelectric FOMs ($F_V{\sim}0.035m^2/C$, $F_D{\sim}0.52{\times}10^{-4}Pa^{-1/2}$) at room temperature. Spontaneous polarization showed a value of $0.27{\sim}0.35C/m^2$ in the composition added to $La^{3+}$. The piezoelectric constant ($d_{33}=350{\sim}490pC/N$) and electromechanical coupling factor ($k_P=0.25{\sim}0.35$) are obtained in $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ compositions with $La^{3+}$ dopant.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.30 no.5
• /
• pp.183-188
• /
• 2020

Lead zinc niobate (PZN)-added lead zirconate titanate (PZT) thick films with thickness of 5~10 ㎛ were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %, 20 % and to 40 %. The PZN-added PZT film showed poorer electrical properties than pure PZT film when the films were coated on silicon substrate and annealed at 700℃. On the other hand, the PZN-added PZT film showed higher remanent polarization and dielectric constant values than pure PZT film when the films were coated on sapphire and annealed at 900℃. The ferroelectric and dielectric characteristics of 20 % PZN-added PZT films annealed at 900℃ were compared with the result values obtained from bulk ceramic specimen with same composition sintered at 1200℃. As annealing temperature increased, dielectric constant increased. These came from enhanced crystallization and grain growth by post heat treatment.

• Journal of the Korean Ceramic Society
• /
• v.43 no.2 s.285
• /
• pp.106-113
• /
• 2006

PMN-PZT films with thickness of $5\;{\mu}m$ were deposited on $Pt/Ti/SiO_2/Si$ substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at $700^{\circ}C$ for 1h exhibited the best electrical properties. Dielectric constant $(\varepsilon_r)$, remanent polarization $(P_r)$ and piezoelectric constant $(d_{33})$ were 1050, $13\;{\mu}C/cm^2$ and 120 pC/N, respectively.

• Korean Journal of Materials Research
• /
• v.10 no.9
• /
• pp.607-611
• /
• 2000

Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.5
• /
• pp.193-196
• /
• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

• Korean Journal of Materials Research
• /
• v.28 no.12
• /
• pp.738-747
• /
• 2018

For the aerospace structural application of high-strength 2xxx series aluminum alloys, stress corrosion cracking(SCC) behavior in aggressive environments needs to be well understood. In this study, the SCC sensitivities of 2024-T62, 2124-T851 and 2050-T84 alloys in a 3.5 % NaCl solution are measured using a constant load testing method without polarization and a slow strain rate test(SSRT) method at a strain rate of 10-6 /sec under a cathodic applied potential. When the specimens are exposed to a 3.5 % NaCl solution under a constant load for 10 days, the decrease in tensile ductility is negligible for 2124-T851 and 2050-T84 specimens, proving that T8 heat treatment is beneficial in improving the SCC resistance of 2xxx series aluminum alloys. The specimens are also susceptible to SCC in a hydrogen-generating environment at a slow strain rate of $10^{-6}/sec$ in a 3.5 % NaCl solution under a cathodic applied potential. Regardless of the test method, low impurity 2124-T851 and high Cu/Mg ratio 2050-T84 alloys are found to have relatively lower SCC sensitivity than 2024-T62. The SCC behavior of 2xxx series aluminum alloys in the 3.5 % NaCl solution is discussed based on fractographic and micrographic observations.