• 동력기계공학회지
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• 제11권3호
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• pp.41-46
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• 2007

The microstructure and electrochemical analysis of welds of electric resistance welding(ERW) pipe were investigated. The direction of metal flow line in HAZ of ERW pipe shifted to the inner(or outer) surface of pipe by plastic deformation during welding. The lowest heat input welds of ERW pipe was showed crack by liquid penetrant testing. Accelerated corrosion test by constant current density of 20mA/$cm^{2}$ developed groove at the welds of ERW pipe and the measured grooving factors were about $1.2{\sim}1.5$. Corrosion potential of base metal obtained by cyclic polarization in artificial sea water(3.5wt.% NaCl solution) was 100mV higher than that of weld metal of ERW pipe.

• The Korean Journal of Ceramics
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• 제4권2호
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• pp.114-121
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• 1998

Using Hebb-Wagner's asymmetric cell, partial conductivities of holes and electrons in yttria stabilized zirconia doped with 10 mol% TiO2 have been estimated by a dc polarization measurement. The current interrruption method and ac impedance measurements have been also made to evaluate the ionic conductivity and to examine the consistency of the partial conductivities. Partial conductivities of electrons(σn) and holes (σp) were found to be pro-peortional to -1/4 and 1/4 power of partial pressure of oxygen gas, respectively, except for σn at reducing conditions. In comparison with 5 mol% doped YSZ, σn was found to increase with the increase of TiO2 concentration, but σp stayed at almost a constant value.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1466-1468
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• 1994

In this paper Dielectric and strain properties of (1-x-y)PMN-yPT-xST Ceramics have been investigated as a function of the amount of $SrTiO_3(ST)$. The $SrTiO_3$ content is ranged from 0.01-0.06(wt%). As the amount of ST is increased, dielectric constant has a maximum value at 0.05 mol composition. The Curie temperature is decreased linearly with increasing ST composition and Polarization properties have been investigated. Coercive field and ramnant polarization has a maximum value at 0.01mol composition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.5-8
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• 1994

In this paper, Dielectric and strain properties of (1-x-y)PMN-yPT-xST Ceramics hale been investigated as a function of the amount of SrTiO$_3$(ST). The SrTiO$_3$ content is ranged from 0.01-0.05(wt%). As the amount of ST is increased, dielectric constant has a maximun value at 0.05 mol% composition. The Curie temperature is decreased linearly with increasing ST composition and Polarization properties have been investigated. Coercive field and remnant polarization has a maximum value at 0.01mo1% composiion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.474-475
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• 2007

The $Sr_{0.8}Bi_{2.2}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The aging properties of SBT capacitor with top electrodes represents a favorable properties in Pt electrode. The dielectric constant and leakage current density with Pt electrode is 340 and $6.81{\times}10^{-10}\;A/cm^2$ respectively. The maximum remanent polarization and the coercive electric field with Pt electrode are $12.40{\mu}C/cm^2$ and 30kV/cm respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.490-491
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• 2007

We have investigated dielectric dispersion and absorption in organic light-emitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric dispersion and absorption of organic light emitting diodes using impedance characteristics measurement by the auto-balancing bridge technique of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase e in the frequency range of 40Hz to $10^8Hz$. We obtained dielectric constant and loss tangent (tan $\delta$) of the device. From these analyses, we are able to interpret a dielectric dispersion and dielectric absorption contributed by an interfacial and orientational polarization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.672-675
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• 2001

The Sr$\sub$0.8/Bi$\sub$2.4/Ta$_2$O$\sub$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. With increasing annealing tempera ture from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}$C/$\textrm{cm}^2$], 48[kV/cm] respectively. The dielectric constant and leakage current density is 213, 1.01${\times}$10$\^$-8/ A/$\textrm{cm}^2$ respectively at annealing temperature of 750[$^{\circ}C$].

• 한국군사과학기술학회지
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• 제11권3호
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• pp.138-145
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• 2008

In this paper, the waveguide slot array antenna which is capable of wide beam steering and dual polarization is designed for an X band synthetic aperture radar. In order to improve the restriction of beam steering range and to remove the butterfly lobes, a typical waveguide slot array antenna has been modified. To implement dual polarization, rod excited waveguide slot elements and ridge waveguide slot elements are alternately arranged. Location of slots, inclination of rod and offset distance of slots are determined on using array characteristic and conductance constant with radiating power on slots. The designed antenna is manufactured and measured with Near-filed measurement method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.243-246
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• 1998

(Ba, Sr)TiO$_3$[BST] thin films were fabricated on Pt/SiO$_2$/Si substrate by RF sputtering technique. The structural, dielectric and electrical properties of BST thin films were investigated with Ar/O$_2$ ratio. Dielectric constant and dielectric loss of the BST thin film were about 1020 and 2.0[%], respectively. (at RF power 80W, post annealing temperature $650^{\circ}C$, deposition pressure of 5mTorr and Ar/O$_2$=80/20). For the BST(Ar/O$_2$=80/20) thin film with Polarization switching cycles of 10$^{10}$ , remanent polarization and coercive field were 0.084[$\mu$C/cm$^2$], 1.954[kV/cm], respectively.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.1038-1042
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• 2005

We have investigated dielectric properties depending on bias voltage in organic light-emitting diodes using 8-hydroxyquinoline aluminum $(Alq_3)$ as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. Impedance characteristics was measured complex impedance Z and phase $\theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent $(tan\delta)$ of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.