Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structural and Electrical Properties of (Ba,Sr)$TiO_3$[BST] Thin Films with Ar/$O_2$ ratio

Ar/$O_2$ 비에 따른 (Ba,Sr)$TiO_3$ 박막의 구조 및 전기적 특성

  • 신승창 (광운대학교 전자재료공학과) ;
  • 이문기 (광운대학교 전자재료공학과) ;
  • 류기원 (여주대학 전자과) ;
  • 배선기 (시립인천대학교 전기공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Published : 1998.11.01
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Abstract

(Ba, Sr)TiO$_3$[BST] thin films were fabricated on Pt/SiO$_2$/Si substrate by RF sputtering technique. The structural, dielectric and electrical properties of BST thin films were investigated with Ar/O$_2$ ratio. Dielectric constant and dielectric loss of the BST thin film were about 1020 and 2.0[%], respectively. (at RF power 80W, post annealing temperature $650^{\circ}C$, deposition pressure of 5mTorr and Ar/O$_2$=80/20). For the BST(Ar/O$_2$=80/20) thin film with Polarization switching cycles of 10$^{10}$ , remanent polarization and coercive field were 0.084[$\mu$C/cm$^2$], 1.954[kV/cm], respectively.

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