• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.33-36
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• 2005

Colloidal Silica(CS)/silane sol solutions were prepared in variation with synthesizing parameters such as ratio of CS to silane and reaction time. In the case of LHSA CS/tetramethoxysilane(TMOS)/methyltrimethoxysilane(MTMS) CS/silane sol, coating film had stable contact angle with increasing reaction time excepting for 48hours. Also, the LHSA CS/TMOS/MTMS coating film had more enhanced flat surface with increasing the amount of MTMS and increasing reaction time. In the case of thermal stability, thermal dissociation of LHSA CS/MTMS sol did not occur up to $550^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.82-85
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• 2004

Colloidal Silica(CS) HSA/2327과 methyltrimethoxysilane(MTMS), 1034A와 tetramethoxysilane(TMOS)/MTMS 간의 졸겔 반응조건이 코팅도막의 특성에 미치는 영향을 조사하기 위하여 CS종류, CS 대비 TMOS/MTMS의 함량비, 반응시간 등을 달리하여 졸을 합성하고, 합성된 졸을 slide glass에 코팅한 후 $300^{\circ}C$에서 경화시킨 도막의 특성들을 조사하였다. HSA/2327/MTMS에 의한 졸로부터 제조된 코팅도막은 졸 반응시간 의존성이 거의 없으며 반응초기부터 접촉각이 상당히 안정되어 있고 특히 낮은 MTMS 함량을 가진 졸들이 더욱 안정된 표면물성을 보였다. 1034A/TMOS/MTMS에 의해서 제조된 코팅도막은 적절한 소수성의 형성과 표면조도의 향상과 더불어 안정된 접촉각 양상을 나타내었다. 표면거칠기는 HSA/2327 혼합 CS계에 의해서는 반응시간이 길고 MTMS 함량이 높아질 때 비교적 표면조도가 나빠지는데 반응시간과 더불어 약간씩 증가하는 경향을 보였다. 1034A CS계에서는 반응시간과 MTMS 함량의 조건에 영향을 받지 않고 표면조도와 균질성이 우수하였다.

• Membrane Journal
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• v.24 no.6
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• pp.491-497
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• 2014

PTMSP-silica composite membranes were prepared by addition of 0, 15, 20, and 30 wt% TEOS (tetraethoxysilane), TMOS (tetramethoxysilane), MTMOS (methyltrimethoxysilane), and PTMOS (phenyltrimethoxysilane) contents to PTMSP using sol-gel process. The gas permeability of the composite membranes for $H_2$, $N_2$ and ideal selectivity for $H_2$ over $N_2$ were investigated as a function of alkoxysilane content. The permeabilities for $H_2$ and $N_2$ increased in the range of alkoxysilane contents 0~20 wt%, however decrease the range of 20~30 wt%. The ideal selectivities for $H_2$ over $N_2$ decreased in the range of TEOS and PTMOS contents 0~15 wt%, but increased in the range of 15~30 wt%. When compared to the upper bound of Robeson, PTMSP-silica composite membranes with TEOS content of 30 wt%, MTMOS content of 20 wt% and PTMOS content of 30 wt% turned out to be a simultaneous improvement in ideal selectivity and permeability.

• Polymer(Korea)
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• v.36 no.1
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• pp.16-21
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• 2012

Organic-inorganic hybrid coating film using 1,2-bis(2,4-dimethyl-5-phenyl-3-thienyl)-3,3,4,4,5,5-hexafluoro-1-cyclopentene (BTHFC) as a photochromic material was prepared under various reaction conditions such as the amounts of tetramethoxysilane (TMOS), various silane coupling agents, and solvent. It was found that color-fading speed and absorbance of the coating film was strongly dependent upon the polarity of silane coupling agent and solvent. In addition, the mole ratio of TMOS and methacryloyloxypropyltrimethoxysilane (MPTMS) was an important factor to determine color-fading speed and absorbance of the coating film. With increasing TMOS contents in coating film, the pencil hardness was increased. On the other hands, the transmittance of coating film was relatively decreased with the increase of TMOS.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2401-2404
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• 2007

Particle size of silicones can be controlled by changing the reaction conditions such as temperature and concentrations of water and tetramethoxysilane (TMOS). Alternatively, the use of ultrasound radiation is also an elegant technique to decrease the particle size. Small silicone particles can be obtained at low temperature from diluted reagent containing TMOS, especially under the powerful ultrasound radiation. The size control may be explained by the rate of particle growth rather than that of nucleation.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.760-765
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• 1996

Silicon oxide thin films are prepared by plasma-enhanced CVD (PECVD) using 100kHz and 13.56MHz generators. Source gases are two sorts of mixture, tetramethoxysilane (TMOS) and oxygen, and tetramethylsilane (TMS) and oxygen. We investigate the effect of frequency on film properties of deposited films including mechanical properties. 100kHz PECVD process can deposit silicon oxide films at $23^{\circ}C$ at the power of 20W. X-ray photoelectron spectroscopy (XPS), infrared spectroscopy (IR) and ellipsometric measurements reveal that the structural quality of the films prepared both by 100kHz process and by 13.56MHz process are very like silicon dioxide. The 100kHz process is adequate for low temperature deposition of SiOx films.

• Bulletin of the Korean Chemical Society
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• v.30 no.3
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• pp.683-686
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• 2009

Slurry phase reaction of elemental silicon with methanol has been studied in the presence of copper using a small amount of cuprous chloride as an activator in DBT (dibenzyltoluene) at various temperatures from 200 ${^{\circ}C}$ to 320 ${^{\circ}C}$. Trimethoxysilane (1a) with a Si-H unit was obtained as the major product and tetramethoxysilane (1b) as the minor product. The reaction worked well using a 0.5 wt % CuCl as an activator. The optimum temperature for this direct synthesis of 1a was 240 ${^{\circ}C}$. Methoxysilanes were obtained in 95% yield with 81% selectivity to 1a from 85% conversion of elemental silicon.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.230-231
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• 2006

We synthesized sol according to kinds(particle size/stabilized ion) of colloidal silica(CS), content ratio of alkoxysilane versus CS and reaction degree in sol solution and studied the surface property of coated gel materials. The contact angle of the thin films prepared from LHSA/N1030 CS/tetramethoxysilane(TMOS)/methyltrimethoxysilane(MTMS) sol-gel reaction system showed a little good relationship with content ratio of TMOS/MTMS silanes. The surface roughness of LHSA CS/TMOS/MTMS reaction system showed flatter than that of LHSA/N1030 CS. The thermal degradation of LHSA CS/TMOS/MTMS coating flim occurred at $550^{\circ}C$.

• Journal of the Mineralogical Society of Korea
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• v.20 no.3
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• pp.155-163
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• 2007

A novel route to the synthesis of tetramethoxysilane and other silicon alkoxides is described using siliceous mudstone as the raw material. The reaction of amorphous silica with triethanol-amine is enhanced by using an alkali metal hydroxide catalyst to form a range of triethanol-amnine-substituted silatrane species. These can undergo alkoxide exchange in acidic alcohols to form alkoxysilatranes, tetraalkoxysilanes, hexaalkoxydisiloxanes and higher siloxanes. Products were identified by FT-IR spectroscopy, XRD, SEM, 1H and 13C NMR spectroscopy, or gas chromatography.