• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.83-84
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• 2006

ITO/4, 4', 4"-tris (N -3 - methylphenyl - N - phenyl - amino) - triphenylamine, [m-MTDATA] / Terbium Iris - (1 - phenyl - 3 - methyl - 4 - (tertiarybutyryl) - pyrazol - 5 - one) triphenylphosphine oxide [$(tb-PMP)_3Tb-(Ph_3PO)$] / Mg:Ag devices were made to investigate its electrical and light emission properties. The thickness of m-MTOATA layer was varied from 0 to 80 nm. There was a threshold thickness for the sufficient hole injection. The insertion of 20 nm thick m-MTDATA layer between ITO and Tb-complex resulted in the right shift of current-voltage curve because of the insufficient hole injection. The low operating voltage can be obtained above the 40 nm of m-MTDATA layer. The insertion of m-MTDATA induced the increase of the background in the electroluminescence spectrum which was dependent on the current density of the devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.412-413
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• 2006

The electrical conduction mechanism of ITO / Terbium tris - (1 - phenyl - 3 - methyl - 4 - (tertiarybutyryl) - pyrazol - 5 - one) triphenylphosphine oxide [$(tb-PMP)_3Tb-(Ph_3PO)$]/Mg/Al devices has been investigated. The calculation of electric field in single layer organic layer between cathode and anode shows the uniform distribution for the electron injection barrier of over 1.4 eV. The measured current-voltage curve shows well matching with the calculated curve based on the tunneling injection of electron under the uniform distribution of electric field.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.51-58
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• 1998

ZnS and TB-doped ZnS (ZnS:Tb) thin films were grown by traveling wave reactor atomic layer epitaxy (AKE) and characterized using materials and surface analysis techniques. $ZnCl_2$, $H_2$S,and tris(2,26,6-tetramethyl-3,5-heptandionato) terbium ($Tb(TMHD)_3$) were used as the precursors in the growth of ZnS:Tb films. The dependence of Cl content in ZnS films on growth temperature was investigated using Rutherford backscattering spectrometry. The Cl content decreased from approximately 9 at.% to 1 at. % as increasing the growth temperature from 400 to $500^{\circ}C$. The segregation of Cl in near surface region was also observed by depth profiling using Auger electron spectroscopy. Scanning electron microscopic studies showed that the ALE-grown ZnS and ZnS:Tb film during ALE process using $Tb(TMHD)_3$was also investigated. Approximately 1 at.% of O in ZnS:Tb(0.5 at.%) film which showed a good crystallinity of hexagonal 2H structure.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.260-264
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• 2014

We developed a novel double dopant bismuth oxide system with Tb and W. When Tb was doped as a single dopant, a Tb dopant concentration more than 20 mol% was required to stabilize bismuth oxides with a high conductivity cubic structure. High temperature XRD analysis of 25 mol% Tb-doped bismuth oxide (25TSB) confirmed that the cubic structure of 25TSB was retained from room temperature to $700^{\circ}C$ with increase in the lattice parameter. On the other hand, we achieved the stabilization of high temperature cubic phase with a total dopant concentration as low as ~12 mol% with 8 mol% Tb and 4 mol% W double dopants (8T4WSB). Moreover, the measured ionic conductivity of 10T5WSB was much higher than 25TSB, thus demonstrating the feasibility of the double dopant strategy to develop stabilized bismuth oxide systems with higher oxygen ion conductivity for the application of SOFC electrolytes at reduced temperature. In addition, we investigated the long-term stability of TSB and TWSB electrolytes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.878-882
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• 2006

We have fabricated single organic layer devices of the organolanthanide complex, terbium tris-(1-phenyl-3-methyl-4-(tertiarybutyry)pyrazol-5-one)triphenylphosphine oxide [$(tb-PMP)_{3}Tb-(Ph_{3}PO)$] for the investigation of its light emission and electrical conduction properties. The thickness of ($(tb-PMP)_{3}Tb-(Ph_{3}PO)$) layer was varied to 60, 75, 95 nm. Mg and Ca layers were used for the cathode contact. The electrical conduction in the $(tb-PMP)_{3}Tb-(Ph_{3}PO)$ single layer devices was dominated by the injection of electrons into the organic layer from the cathode. A higher current density at much lower voltages can be attained with Ca cathode because of the enhanced electron injection. The device shows very sharp emission at 548 nm. The FWHM of the strongest emission peak was 12 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.744-748
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• 2006

Emission characteristics of terbium-activated $InBO_3$ under cathode-ray(c.r.) and vacuum ultra violet(v.u.v.) irradiation have been investigated as a functions of norminal compositions and firing conditions. From the x-ray analysis, it was found that some of the synthesized samples contained excess $In_2O_3$ and the amount of the excess $In_2O_3$ varied with the norminal composition and heat treatment conditions. The samples with remanent excess $In_2O_3$ showed lower luminescence intensities than the ones free of excess $In_2O_3$. The phosphors of norminal composition of $InBO_3+10mol%B_2O_3:2mol%Tb$ synthesized at $1250^{\circ}C$ showed excellent CL and PL properties.

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.352-358
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• 1995

Measurements of the Faraday rotation and magnetization of terbium-doped Hoya FR5 glass and cerium-doped Hoya FR4 glass have been made as a function of temperature T in the range 4.2 K -10 K and of magnetic field H of up to 80 kG at the $Ar^+$ laser wavelength of 514.5nm. The saturations of magnetization and Faraday rotation above H/T> $5kG.K^{-1}$ can be analyzed by the quantum theory of paramagnetism. Calculated parameters show that the large Verdet constant of $Ce^{3+}$ glass is due to the effective $4f\rightarrow5d$ electric dipole transition effect and that of $Tb^{3+}$ glass is due to the magnetization effect.effect.

• Journal of Powder Materials
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• v.23 no.6
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• pp.447-452
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• 2016

Neodymium-iron-boron (Nd-Fe-B) sintered magnets have excellent magnetic properties such as the remanence, coercive force, and the maximum energy product compared to other hard magnetic materials. The coercive force of Nd-Fe-B sintered magnets is improved by the addition of heavy rare earth elements such as dysprosium and terbium instead of neodymium. Then, the magnetocrystalline anisotropy of Nd-Fe-B sintered magnets increases. However, additional elements have increased the production cost of Nd-Fe-B sintered magnets. Hence, a study on the control of the microstructure of Nd-Fe-B magnets is being conducted. As the coercive force of magnets improves, the grain size of the $Nd_2Fe_{14}B$ grain is close to 300 nm because they are nucleation-type magnets. In this study, fine particles of Nd-Fe-B are prepared with various grinding energies in the pulverization process used for preparing sintered magnets, and the microstructure and magnetic properties of the magnets are investigated.

• Journal of the Korean Magnetic Resonance Society
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• v.10 no.2
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• pp.197-202
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• 2006

[ $^{11}B$ ] nuclear magnetic resonance (NMR) measurements were performed on the single crystals of $TbB_4$ to investigate local electronic structure and 4f spin dynamics. $^{11}B$ NMR spectrum, Knight shift, spin-lattice and spin-spin relaxation rates were measured down to 4K at 8T. $^{11}B$ NMR shift and linewidth are huge and strongly temperature dependent due to the 4f moments. In addition, both are proportional to magnetic susceptibility, indicating that the hyperfine field at the boron site originates from the 4f spins of Tb. Below $T_N$, the single broad resonance peak of $^{11}B$ NMR splits into several peaks reflecting the local magnetic fields due to antiferromagnetic spin arrangements. The longitudinal and the transverse relaxation rates, $1/T_1\;and\;1/T_2$, independent of temperature above $T_N$, decreases tremendously confirming huge suppression of spin fluctuation below $T_N$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.440-441
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• 2007

For this study, terbium-doped yttrium aluminum garnet (YAG:Tb) phosphor powders were prepared via the combustion process using the varous reagents. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope(SEM), and photoluminescence (PL). Single-phase cubic YAG:Tb crystalline powder was obtained at $1000^{\circ}C$ by directly crystallizing it from amorphous materials, as determined by XRD techniques. The SEM image showed that the resulting YAG:Tb powders had uniform sizes and good homogeneity. The photoluminescence spectra of the YAG:Tb nanoparticles were investigated to determinethe energy level of electron transition related to luminescence processes. There were three peaks in the excited spectrum, and the major one was a broad band of around 274 nm. Also, the YAG:Tb nanoparticles showed two emission peaks in the range of 450~500 nm and 525~560 nm, respectively, and had maximum intensity at 545 nm.