• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2512-2517
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• 2007

Effect of natural convention for hot plate surface temperature uniformity was studied by experiments that were adjusted height of chamber and temperature difference. The hot plate chamber is composed of the hot plate and the upper heater and adiabatic vertical wall. The hot plate diameter is 220mm and maintains temperature at $150^{\circ}C$. Flow pattern compares with surface temperature and confirms that natural convection affects on temperature uniformity of hot plate surface. In case, temperature non-uniformity of hot plate surface is due to heater pattern, lots of weak and small flow cells more improve temperature uniformity than stronger flow cells or non-developing flow cell. Improve temperature uniformity $1.2^{\circ}C$ when developing weak and small flow cells.

• 전자공학회논문지D
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• 제34D권10호
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• pp.68-76
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• 1997

In this paper, design parameters of rapid thermal processing(RTP) to minimize the wafer temperature uniformity errors are proposed. Lamp ring positions and the wafer height are important parameters for wafer temperature uniformity in RTP. We propose the method to seek lamp ring positions and the wafer gheight for optimal temperature uniformity. The proposed method is applied to seek optimal lamp ring positions and the wafer feight of 8 inch wafer. To seek the optimal lamp ring positions and the wafer height, we vary lamp ring positions and the wafer height and then formulate the wafer temperature uniformity problem to the linear programming problem. Finally, it is shown that the wafer temperature uniformity in RTP designed by optimal problem. Finally, it is hsown that the wafer temperature uniformity is RTP designed by optimal parameters is improved to comparing with RTP designed by the other method.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.93-98
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• 2008

We investigated the effect of process temperature on removal rate and non-uniformity based on single head kinematics in oxide CMP. Generally, it has been known that the temperature profile directly transfers to the non~uniformity of removal rate on the wafer, which has similar tendency with the sliding distance of wafer. Experimental results show that platen velocity is a dominant factor in removal rate as well as average temperature. However, the non-uniformity does not coincide between process temperature and removal rate, due to slurry accumulation and low deviation of temperature. Resultantly, the removal rate is strongly dependent on the rotational speed of platen, and its non -uniformity is controlled by the rotational speed of polishing head. It means lower WIWNU (With-in-wafer-non-uniformity) can be achieved in the region of higher head speed.

• 한국정밀공학회지
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• 제31권10호
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• pp.947-954
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• 2014

Performance of next generation susceptor is affected by temperature uniformity in order to produce reliably large-sized flat panel display. In this paper, we propose a learning estimation model of susceptor to predict and appropriately assess the temperature uniformity. Artificial Neural Networks (ANNs) and Support Vector Machines (SVMs) are compared for the suitability of the learning estimation model. It is proved that SVMs provides more suitable verification of uniformity modeling than ANNs during each stage of temperature variations. Practical procedure for uniformity estimation of susceptor temperature was developed using the SVMs prediction algorithm.

• 한국산학기술학회논문지
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• 제16권6호
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• pp.3714-3721
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• 2015

서셉터 히터에서 쉬스 열선을 사용하는 방법이 일반화되어 있지만, 대면적 초고온 조건에서는 서셉터의 온도 균일도 성능 저하의 문제가 있다. 본 연구에서는 온도균일도 성능을 향상시킬 수 있도록 판형 형태의 열선을 기본으로 새로운 서셉터를 설계하여 프로토타입을 개발하였다. 표면 온도 $450^{\circ}C$의 고온에서 1.4% 이내로 온도 균일도가 시제작된 서셉터에서 검증될 수 있었다. 또한 온도 학습 데이터를 이용하여 측정 온도 데이터를 예측할 수 있는 커널 회귀 알고리즘을 개발하고, 이러한 예측 데이터와 측정 데이터의 비교 분석으로 균일도 측정 온도의 신뢰성을 확인할 수 있었다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1997년도 한국자동제어학술회의논문집; 한국전력공사 서울연수원; 17-18 Oct. 1997
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• pp.1508-1511
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• 1997

In this paper, design parameters of Rapid Thermal Processing(RrW) to minimize the wafer tempera ture uniformity errors are proposed. 1,anip ling positions and the wafer height are important parameters for waf er temperature uniformity in R'I'P. We propose the method to seek lamp ling positions and the wafer height for optimal temperature uniformity. l'he ~~roposed method is applied to seek optimal lamp ling positions and the waf er height of 8 inch wafer. 'I'o seek the optimal lamp ling positions and the wafer height, we var\ulcorner. lamp ling 110s itions and the wafer height and then formulate the wafer temperature uniformity problem to the linear programmi ng problem. Finally, it is shown that the wafer temperature uniformity in RI'I' designed by optimal prarneters is improved to comparing with Ii'l'P designed by the other method.

• 한국표면공학회지
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• 제43권6호
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• pp.304-308
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• 2010

Deposition temperature uniformity of GaN based MQW (multiple quantum well) layers is an important key which affects the wavelength uniformity of white LEDs. Temperature uniformity was assessed by infrared images for both cases of a static and a rotating susceptor. Rotating the susceptor at 2.5 rpm over the induction heater gave 4.3% of temperature non-uniformity. Temperature distribution of the graphite susceptor over the induction heater was numerically modelled and agreed with experimental results.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 추계학술대회논문집B
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• pp.261-266
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• 2000

Temperature variation during silicon wafer baking is mainly due to natural convection caused by temperature difference between silicon wafer and upper plate. Several cases are tested and calculated numerically to improve temperature uniformity. The temperature difference and velocity magnitude in the flow cell is reduced for a small gap between the wafer and upper plate because the natural convection force is suppressed in the small space. The uniform temperature distribution can be obtained with controling the incoming flow distribution from the upper plate. An alternative method is the adiabatic wall condition on the upper plate to maintain the temperature uniformity within $0.3^{\circ}C$ on the water plate.

• Journal of the Optical Society of Korea
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• 제17권2호
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• pp.213-218
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• 2013

Although infrared focal plane array (IRFPA) detectors have been commonly used, non-uniformity correction (NUC) remains an important problem in the infrared imaging realm. Non-uniformity severely degrades image quality and affects radiometric accuracy in infrared imaging applications. Residual non-uniformity (RNU) significantly affects the detection range of infrared surveillance and reconnaissance systems. More effort should be exerted to improve IRFPA uniformity. A novel NUC method that considers the surrounding temperature variation compensation is proposed based on the binary nonlinear non-uniformity theory model. The implementing procedure is described in detail. This approach simultaneously corrects response nonlinearity and compensates for the influence of surrounding temperature shift. Both qualitative evaluation and quantitative test comparison are performed among several correction technologies. The experimental result shows that the residual non-uniformity, which is corrected by the proposed method, is steady at approximately 0.02 percentage points within the target temperature range of 283 K to 373 K. Real-time imaging shows that the proposed method improves image quality better than traditional techniques.

• 한국수소및신에너지학회논문집
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• 제22권6호
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• pp.878-883
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• 2011

Effect of flow uniformity on the reaction characteristics of a catalytic combustor for high temperature fuel cell system has been experimentally investigated in the present study. One of the most important factor in designing catalytic combustion is to avoid hot spot in catalysts. In this regard, it is very important to secure flow uniformity of combustor inlet. A couple of perforated plates were applied at the front of catalyst region as flow uniformity device with minimal pressure drop. Results show that the velocity and temperature profile became more uniform when applying the flow uniformity device. CO and $CH_4$ emissions at the combustor exit were decreased and the average exit temperature was slightly increased with the flow uniformity device.