• 한국가스학회지
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• 제26권5호
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• pp.41-48
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• 2022

2-Chloro-N-(Cyano-2-thienyl methyl) acetamide(CCTA)는 농약을 합성하는데 사용하는 중간체로써 상온 및 상압에서는 안정하지만 열축적 시 분해될 수 있다. 본 연구에서는 열중량분석기(TGA) 실험을 통해 온도에 따른 질량 변화 측정으로 분해거동을 확인하고, 시차주사열량계(DSC)를 이용하여 열분해특성을 평가하였다. CCTA는 약 91℃에서 발열 분해반응이 급격하게 발생하였으며, Kissinger method, Kissinger-Akahira- Sunose(KAS) method, Flynn-Wall-Ozawa(FWO) method를 이용한 활성화 에너지 계산 결과, 각각 162 kJ/mol, 140 kJ/mol, 139 kJ/mol 으로 나타났다. 활성화에너지를 이용하여 계산된 24시간 이내 최대발열속도에 도달하는 온도인 T_D24는 52~55 ℃로 평가되었다.

• 센서학회지
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• 제30권1호
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• pp.51-55
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• 2021

We demonstrated a polymer dielectric with low leakage characteristics through an optimal blade coating method for low-cost and large-scale fabrication of metal-insulator-metal (MIM) capacitors. Cross-linked poly(4-vinylphenol) (C-PVP), which is a typically used polymer dielectric, was coated on a 10 × 10 cm indium-tin-oxide (ITO) deposited glass substrate by changing the deposition temperature (TD) and coating velocity (VC) in the blade coating. During the blade coating, the thickness of the thin c-PVP varied depending on TD and VC owing to the 'Landau-Levich (LL) regime'. The c-PVP-dielectric-based MIM capacitor fabricated in this study showed the lowest leakage current characteristics (10-6 A/㎠ at 1.2 MV/㎠, annealing at 200 ℃) and uniform electrical characteristics when TD was 30 ℃ and VC was 5 mm/s. In addition, at TD = 30 ℃, stable leakage characteristics were confirmed when a different electric field was applied. These results are expected to positively contribute to applications with next-generation electronic devices.

• Korean Chemical Engineering Research
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• 제50권4호
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• pp.696-701
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• 2012

사용후핵연료의 안정적 관리와 재활용을 위해 건식 처리공정이 관심을 끌고 있으며 현재 국내에서도 이를 중심으로 사용후핵연료 관리를 위한 방안이 모색되고 있다. 파이로 공정으로 불리는 사용후핵연료 고온 용융염 공정 중 전해환원 공정은 후속 공정인 전해정련 공정에 금속 물질을 공급하는 역할을 한다. 이를 위해 전해환원 공정은 고온 LiCl을 매질로 사용하여 전기화학적으로 생성된 Li과의 반응으로 산화물을 금속으로 전환시킨다. 사용후핵연료에 존재하는 다양한 핵종들은 전해환원 공정의 매질인 LiCl과 반응 매질인 Li에 대한 반응성에 차이에 의해 시스템 내에 분배하게 된다. 본 연구에서는 이와 같은 시스템에서 사용후핵연료 구성 성분들의 거동을 해석하기 위해 열역학적 계산을 통해 각 원소들의 반응성을 확인하였다. 공정온도에서 우라늄 및 초우란 원소들은 금속으로 환원되는 반면 Eu를 제외한 희토류 산화물들은 안정적인 산화물로 존재하게 된다. 또한, 본 연구에서는 공정온도에 대한 반응의 경향을 판단하였으며 공정 온도에서 기준 사용후핵연료를 대상으로 전해환원 반응에 따라 분배되는 상들의 방사능 및 열부하를 계산하여 공정 자료를 제시하였다.

• Asian-Australasian Journal of Animal Sciences
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• 제27권7호
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• pp.937-945
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• 2014

Green and black tea by-products, obtained from ready-made tea industry, were ensiled at $10^{\circ}C$, $20^{\circ}C$, and $30^{\circ}C$. Green tea by-product silage (GTS) and black tea by-product silage (BTS) were opened at 5, 10, 45 days after ensiling. Fermentation characteristics and nutrient composition, including tannins, were monitored and the silages on day 45 were subjected to in vitro ruminal fermentation to assess anti-nutritive effects of tannins using polyethylene glycol (PEG) as a tannin-binding agent. Results showed that the GTS and BTS silages were stable and fermented slightly when ensiled at $10^{\circ}C$. The GTS stored at $20^{\circ}C$ and $30^{\circ}C$ showed rapid pH decline and high acetic acid concentration. The BTS was fermented gradually with moderate change of pH and acid concentration. Acetic acid was the main acid product of fermentation in both GTS and BTS. The contents of total extractable phenolics and total extractable tannins in both silages were unaffected by storage temperatures, but condensed tannins in GTS were less when stored at high temperature. The GTS showed no PEG response on in vitro gas production, and revealed only a small increase by PEG on $NH_3$-N concentration. Storage temperature of GTS did not affect the extent of PEG response to both gas production and $NH_3$-N concentration. On the other hand, addition of PEG on BTS markedly increased both the gas production and $NH_3$-N concentration at any ensiled temperature. It can be concluded that tannins in both GTS and BTS suppressed rumen fermentation, and tannins in GTS did more weakly than that in BTS. Ensiling temperature for both tea by-products did not affect the tannin's activity in the rumen.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• Journal of Welding and Joining
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• 제28권5호
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• pp.45-50
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• 2010

The fatigue crack growth characteristics of base metal and weld joint of 9% Ni steel for LNG storage tank was carried out using CT specimen at room temperature and $-162^{\circ}C$. Fatigue crack growth rate of base and weld metals at RT and $-162^{\circ}C$ was coincided with a single line independent of the change of stress ratio and temperature. In the region of lower stress intensity factor range, fatigue crack growth rate at $-162^{\circ}C$ was slower than that at RT, and the slop of fatigue crack growth rate at $-162^{\circ}C$ increased sharply with propagating of fatigue crack, fatigue crack growth rate at RT and $-162^{\circ}C$ was intersected near the region of $2{\times}10-4\;mm$/cycle, and after the intersection region, fatigue crack growth rate at $-162^{\circ}C$ was faster than that at RT. The micro-fracture mechanism using SEM shows the ductile striation in the stable crack growth region. Also the defects of weld specimen after fatigue testing were detected using the A scan of ultrasonic apparatus.

• 한국약용작물학회지
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• 제28권1호
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• pp.47-55
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• 2020

Background: Curcuma longa L., a perennial crop originating from tropical and subtropical region, including India, is noted for its important medicinal properties. However, C. longa plants are unable to endure the winter season in Korea, and its rhizomes were invariably succumb to fungal infection when stored in polyvinyl bags. In this study, we accordingly sought to develop a C. longa variety capable of producing high rhizome yields and to identify stable conditions under which rhizomes can be stored in Korea. Methods and Results: We evaluated the agronomic characteristics of nine C. longa germplasms and examined the effects of storing rhizomes at different temperatures (4℃ to 24℃) in paper bags or plastic baskets. We found that the finger rhizomes was higher in CUR02, CUR03, and CUR06 germplasms than those of other groups. Furthermore, in terms of yield per 1 ㎡, the weights of the finger rhizomes and tuberous roots were significantly higher in CUR09 (3.4 ㎏/㎡) and CUR04 (678.7 g/㎡) than those of other groups. Therefore, we consider that these C. longa germplasms might be useful as breeding material. Although the fresh weights of the rhizomes were slightly reduced when stored in paper bags and a plastic baskets at 10℃ to 15℃, there was no evidence of fungal decomposition or sprouting, which is observed when using a conventional storage method. Conclusions: The results of this study indicate that the selected C. longa germplasms can provide a useful source of breeding material for the development of high yielding varieties and that a temperature ranging from 10℃ to 15℃ and the use of paper bags or plastic baskets provide stable post-harvest storage conditions for C. longa rhizomes.

• E2M - 전기 전자와 첨단 소재
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• 제10권5호
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• pp.425-433
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• 1997

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 82$0^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$was observed in all of the obtained films.lms.

• 한국표면공학회지
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• 제38권1호
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• pp.28-36
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• 2005

In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal organic chemical vapor deposition (MOCVD) and annealed at the temperature between 250℃ and 550℃ in various ambient gases. When the Cu thin films were annealed in the hydrogen ambience compared with oxygen ambience, sheet resistance of Cu thin films decreased and the breakdown of TaN diffusion barrier was not occurred and a stable Cu/TaN/Si structure was formed at the annealing temperature of 450℃. In addition, reflow properties of Cu thin films could be enhanced in H₂ ambient. With Cu reflow process, we could fill the trench patterns of 0.16～0.24 11m with aspect ratio of 4.17～6.25 at the annealing temperature of 450℃ in hydrogen ambience. It is expected that Cu reflow process will be applied to fill the deep pattern with ultra fine structure in metallization.

• Journal of Advanced Marine Engineering and Technology
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• 제29권8호
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• pp.907-914
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• 2005

Experiments at the Japan Microgravity Center (JAMIC) have investigated the interaction between diffusion flames and solid surfaces Placed neat flames The fuel for the flames was $C_{2} H_{4}$ The surrounding oxygen concentration was 35$\%$ with surrounding air temperatures of $T_{a}$ : 300K. Especially, the effect of wall temperature on soot deposition from a diffusion flame Placed near the wall has been studied by utilizing microgravity environment, which can attain very stable flame along the wall. Cylindrical burner with fuel injection was adopted to obtain two dimensional soot distributions by laser extinction method. In the experiment two different wall temperatures. $T_{w}$=300, 800 K, were selected as test conditions The results showed that the soot distribution between flame and burner wall was strong1y affected by the wall temperature and soot deposition increases with decrease in wall temperature. The comparison among the values lot two different wall temperatures suggests that the change in thermophoretic effect is the most dominant factor to give the change in soot deposition characteristics.