• Title/Summary/Keyword: temperature reactive

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Theoretical Analysis on the Hot Surface Ignition of a Rectangular-Shape Solid Fuel

  • Kim, Se-Won
    • Journal of Energy Engineering
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    • v.4 no.2
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    • pp.297-302
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    • 1995
  • Ignition of a reactive solid in a shape of square corner by a hot surface is studied theoretically. Ignition time and the location of ignition point are determined as a function of dimensionless parameters, with the use of the homogeneous model of ignition. The effect of geometry on the ignition of solid fuel results in the local characteristics: the reaction is initiated in a hot point in depth of the substance. It is shown that ignition time is proportional to the dimensionless initial temperature, whereas for the ignition of the semiinfinite body this dependence was quadratic.

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Effects of Sputtering Conditions on Properties of $CaTiO_3 : Pr$ Phosphor thin Films (Sputtering 조건이 $CaTiO_3 : Pr$ 형광체 박막의 물성에 미치는 영향)

  • 정승묵;김영진;강승구;이기강
    • Korean Journal of Crystallography
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    • v.11 no.3
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    • pp.167-172
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    • 2000
  • CaTiO₃:Pr phosphor thin films were prepared on Si(100), ZnO/glass, Corning glass and ITO/glass by rf magnetron reactive sputtering. The effects of deposition parameters such as oxygen partial pressure, substrate temperature, and annealing conditions on crystallinity and compositional variation of the films were investigated. PL spectra of CaTiO₃:Pr phosphor thin films exhibited red regime peaking at 613 nm and enhanced PL intensity was observed for the film annealed in vacuum atmosphere as compared to the deposit annealed in N₂ environment.

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The study on electrical properties of the NiCr thin film resistor (NiCr 박막저항의 전기적 특성 연구)

  • 류제천;김동진;김용일;강전홍;김한준;유광민
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.275-278
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    • 2000
  • We were fabricated of NiCr thin film resistors(TFR) on A1$_2$O$_3$(99.5%) substrates by dc magnetic sputtering system. The characteristics of electrical resistance (Sheet resistance & Temperature-Coefficient of the resistance-value:TCR) by annealing condition and reactive gas on the resistors were studied.

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A Study on the TiC Coating Using Hollow Cathode Discharge Ion Plating (HCD이온플레이팅 방법을 이용한 zzTiC코팅에 관한 연구)

  • 김인철;서용운;황기웅
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.8
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    • pp.875-882
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    • 1992
  • Titanium carbide(TiC) films, known as having excellent characteristics of resistance to wear and corrosion, were deposited on SUS-304 sheets using HCD(Hollow Cathode Discharge) reactive ion plating with acetylene gas as the reactant gas. The characteristics of TiC films were examined by X-ray diffraction, micro-Vickers hardness tester, ${\alpha}$-step, SEM(Scanning Electron Spectroscopy), ESCA(Electron Spectroscopy for Chemical Analysis), and AES(Auger Electron Spectroscopy) and the results were discussed with regard to the changes of various deposition conditions(bias voltage, acetylene flow rate, temperature).

Aqeous Neutralizer as Reactive Solvents for Odorous Ammonia Removal

  • Park, Young-G.
    • Environmental Engineering Research
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    • v.13 no.3
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    • pp.119-124
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    • 2008
  • Ammonia is an inorganic compound that may cause severe odor problem. In this study the effectiveness of applying natural neutralizer to destroy and remove the odor-causing compound from gas streams was studied. Experimental result evaluated with a bench-scale apparatus via the neutralization of gas phase. This indicates that the natural neutralization depends on the gas concentration, gas residence time, temperature and pH. Removal efficiency of ammonia from gas stream was achieved by 95% using theconvection in the packed bed. This study proved the chemical neutralization technology was effective for controlling inorganic odor-causing compound.

Nutrient Leaching from Leaf Litter of Emergent Macrophyte(Zizania latifolia) and the Effects of Water Temperature on the Leaching Process

  • Park, Sangkyu;Cho, Kang-Hyun
    • Animal cells and systems
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    • v.7 no.4
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    • pp.289-294
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    • 2003
  • To quantify nutrient loading from emergent macrophytes through leaching in the littoral zones of Paldang Reservoir, we conducted incubation experiments using leaf litter of the emergent macrophyte, Zizaniz latifolia. To separate the leaching process from microbial decay, we used $HgCl_2$ to suppress microbial activity during the experiment. We measured electric conductivity, absorbance at 280nm, total nitrogen and dissolved inorganic nitrogen, total phosphorus and soluble reactive phosphorus, Na, K, Mg and Ca amounts in leaf litter and in water. In addition, we examined the effects of water temperature and ion concentrations of ambient water on the leaching process. A total of 6% of the initial ash-free dry mass of leaf litter was lost due to leaching during incubation (four days). Electric conductivity and A280 continued to increase and saturate during the incubation. To compare reaching rates of different nutrients, we fitted leaching dynamics with a hyperbolic saturation function [Y=AㆍX/(B+X)]. From these fittings, we found that ratios of leaching amounts to nutrient concentration in the litter were in the order of K > Na > Mg > P > Ca > N. Leaching from leaf litter of Z. latifolia was dependent on water temperature while it was not related with ion concentrations in the ambient water. Our results suggest that the leaching process of nutrients, especially phosphorus, from aquatic macrophytes provides considerable contribution to the eutrophication of the Paldang Reservoir ecosystem.

Experimental Study of Reactive Ion Etching of Tungsten Films Using $SF_6$ Plasma ($SF_6$플라즈마를 이용한 텅스텐 박막의 반응성이온식각에 관한 실험적 연구)

  • 박상규;서성우;이시우
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.7
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    • pp.60-74
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    • 1993
  • Experiments of RIE of tungsten films using SF$_{6}$ plasma were conducted to investigate the effect of process parameters on etch rate, uniformity, anisotropy, and selectivity. As power increased, the etch rate increased. Maximum etch rate was obtained at 200mtorr As interelectrode spacing increased the etch rate increased for P < 200mtorr while it decreased for P> 200mtorr. Etch rate was maximum at 20 sccm gas flow rate. As substrate temperature increased, the etch rate increased and activation energy was 0.046 eV. In addition, maximum etch rate was acquired at 20% $O_{2}$ addition. The etch rate slightly increased when Ar was added up to 20% while it continuously decreased when N$_{2}$ was added. Uniformity got improved as pressure decreased and was less than 4% for P <100mtorr. Mass spectrometer was utilized to analyze gas composition and S and F peaks were observed from XPS analysis with increasing power. The anisotropy was better for smaller power and spacing, and lower pressure and temperature. It improved when CH$_{4}$ was added and anisotropic etch profile was obtained when about 10% $O_{2}$ was added. The selectjvity was better for smaller power larger pressure and spacing, and lower temperature. Especially. low temperature processing was proposed as a novel method to improve the anisotropy and selectivity.

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A study on the formation of ITO by reactive DC cylindrical sputtering (DC 원통형 반응성 스파트링을 이용한 ITO 형성에 관한 연구)

  • 조정수;박정후;하홍주;곽병구;이우근
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.05a
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    • pp.35-38
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    • 1995
  • Indium Tin Oxide(ITO) thin film is transparent to visible ray and conductive in electricity. It is seen that the samples made by the sputtering process have high transmission rate to visible ray and high adhesion , but the planar type magnetron sputtering process with is very well known in industrial region have a defect of partial erosion on the surface of target and a high loss of target and also since the substrate is positioned in plasma, the damage on thin film surface is caused by the reaction with plasma. In cylindrical magnetron sputtering system. it is known that the loss of target is little , the damage of thin film is very little and the adhesion of thin film with substrate is strong. In this study, we have made ITO thin film in the cylindrical DC magnetron system with the variable of substrate temperature , magnetic field, vacuum condution and the applied voltage. The general temperature for formation on ITO is asked at 350 $^{\circ}C$~400$^{\circ}C$ but we have made ITO is low temperature(80-150$^{\circ}C$) By studing electrical and optical properties of ITO thin fims made by varing several condition, we have searched the optimal condition for formation in the best ITO in low temperature.

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High Temperature Electrical Conductivity of Perovskite La0.98Sr0.02MnO3 (페로프스카이트 $La_{0.98}Sr_{0.02}MnO_3$의 고온전기특성)

  • 김명철;박순자
    • Journal of the Korean Ceramic Society
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    • v.29 no.11
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    • pp.900-904
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    • 1992
  • High temperature electrical conductivity was measured for perovskite La0.98Sr0.02MnO3 at 200~130$0^{\circ}C$ as a function of Po2 and 1/T. Perovskite La1-xSrxMnO3 system is the typical oxygen electrode in solid oxide fuel cell (SOFC). Acetate precursors were used for the preparation of mixed water solution and the calcined powders were reacted with Na2CO3 flux in order to obtain highly reactive powders of perovskite La0.98Sr0.02MnO3. The relative density was greatly increased above 90% because of the homogeneous sintering. From the conductivity ($\sigma$)-temperature and conductivity-Po2 at constant temperature, the defect structure of La0.98Sr0.02MnO3 was discussed. From the slope of 1n($\sigma$) vs 1/T, the activation energy of 0.069 and 0.108eV were evaluated for above 40$0^{\circ}C$, respectively. From the relationship between $\sigma$ and Po2, it was found that the decomposition of La0.98Sr0.02MnO3 was occurred at 10-15.5 atm(97$0^{\circ}C$) and 10-11 atm(125$0^{\circ}C$). It is supposed that the improvement of p-type conductivity may be leaded by the increase of Mn4+ concentration through the substitution of divalent/monovalent cations for La site in LaMnO3.

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Effects of Fluoride Additions on Sintering and Microwave Dielectric Properties of CaWO$_4$ (Fluoride 첨가에 따른 CaWO$_4$의 소결 및 고주파 유전특성)

  • 이경호;김용철;방재철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.127-130
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    • 2002
  • In this study, development of a new LTCC material using a non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. For LTCC application, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, CaWO$_4$ was tamed out the suitable LTCC material. CaWO$_4$ can be sintered up to 98% of full density at 1200$^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 10.15, 62880GHz, and -27.8ppm/$^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, 0.5∼1.5 wt% LiF were added to CaWO$_4$. LiF addition reduced the sintering temperature/time down to 800$^{\circ}C$/10∼30min due to the reactive liquid phase sintering. Dielectric constant lowered from 10.15 to 9.38 and Q x fo increased up to 92000GHz with increasing LiF content.

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