• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2007.06a
• /
• pp.524-527
• /
• 2007

[ $Bi_2Sr_2Ca_{n-1}Cu_nO_x$ ](n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about % K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $ CaCuO_2$ was observed in all of the obtained films.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.249-254
• /
• 1998

The etching experiments for n-GaN were done using the wet chemical, photo-enhanced-chemical and electro-chemical etching methods. The experimental results show that n-GaN is etched is diluted NaOH solution at room temperature and the removed thickness of n-GaN is linearly increased with etching times. The etching rate of the photo-enhanced-chemical and electro-chemical etching methods are several times higher than that of the wet chemical method. The maximum etching rate of n-GaN with $n{\fallingdotseq}1{\times}10^{19}cm^{-3}$ was 164 $\AA$/min under the experimental condition of the Photo-enhanced-chemical etching. The etching rates of n-GaN are very much dependant on the electron concentrations of the samples. The pattern is $100{\mu}m{\times}100{\mu}m$ rectangulars covered with $SiO_2$film. It is shown that the etched side-wall charactistics of the pattern is vertical without dependance of the n-GaN orientations, and the smoothness of etched n-GaN surface is fairly flat.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.1
• /
• pp.1-5
• /
• 2015

For the special usage, the effort of developing AlN single crystals has been very hot in the world. The AlN-base UV LEDs are used on the field of sterilization, purification, curing and analyzing, which can advance human's living and medical processes etc.. AlN single crystals were grown by the PVT (Physical vapor transport) method. On the growing process, carbon crucibles with three different types such as normal size, taller than normal and wider than normal were used for comparison. The processing temperature was in the range of $1900{\sim}2100^{\circ}C$ and ambient pressure was 200~1 Torr. When the taller crucible was used, the sublimation mass was greater than normal dimension one but the best condition of growth changes widely. However the wider one gave much sublimation mass and growing condition was more stable than normal dimension. On limited growing furnace system, the changes of crucible dimension of PVT method provide the change of best condition for growth rate, as-grown crystal quality and growth condition stability.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.6
• /
• pp.1115-1121
• /
• 2007

[ $Bi_2Sr_2Ca{_{n-1}}Cu_nO_x$ ](n=0,1,2) thin fans have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Journal of the Korea Concrete Institute
• /
• v.15 no.2
• /
• pp.305-313
• /
• 2003

The setting and hardening of concrete is accompanied with nonlinear temperature distribution caused by development of hydration heat of cement. Especially at early ages, this nonlinear distribution has a large influence on the crack evolution. As a result, in order to predict the exact temperature history in concrete structures it is required to examine thermal properties of concrete. In this study, the coefficient of air convection, which presents thermal transfer between surface of concrete and air, was experimentally investigated with variables such as velocity of wind and types of form. From experimental results, the coefficient of air convection was calculated using equations of thermal equilibrium. Finally, the prediction model for equivalent coefficient of air convection including effects of velocity of wind and types of form was theoretically proposed. The coefficient of air convection in the proposed model increases with velocity of wind, and its dependance on wind velocity is varied with types of form. This tendency is due to a combined heat transfer system of conduction through form and convection to air. From comparison with experimental results, the coefficient of air convection by this model was well agreed with those by experimental results.

• Elastomers and Composites
• /
• v.38 no.3
• /
• pp.213-226
• /
• 2003

The cure and rheological behavior of diglycidyl ether of bisphenol F/nadic methyl anhydride resin system with the kinds of imidazole were studied using a differential scanning calorimeter (DSC) and a rotational rheometer. The isothermal traces were employed to analyze cure reaction. The DGEBF/ anhydride conversion profiles showed autocatalyzed reaction characterized by maximum conversion rate at $20{\sim}40 %$ of the reaction. The rate constants ($k_1,\;k_2$) showed temperature dependance, but reaction order did not. The reaction order (m+n) was calculated to be close to 3. There are two reaction mechanisms with the kinds oi catalyst. The gel time was determined by using G'-G" crossover method, and the activation energy was obtained from this results. From measurement of rheological properties it was found that the logarithmic 1:elation time of fused silica filled DBEBF epoxy compounds linearly increased with the content of filler and decreased with temperature. The highly filled epoxy compounds showed typical pseudoplastic behavior, and the viscosity of those decreased with increasing maximum packing ratio.

• Geophysics and Geophysical Exploration
• /
• v.15 no.4
• /
• pp.209-218
• /
• 2012

Repeatability and reproducibility in solid weight and effective porosity measurements have been discussed using 8 core samples with different diameters, lengths, rock types, and effective porosities. Further, the effect of temperature on the effective porosity measurement has been discussed as well. Effective porosity of each sample has been measured 7 times with vacuum saturation method with vacuum pressure of 1 torr and vacuum time of 80 minutes. Firstly, effective porosity of each sample is measured one by one, so that it can provide a reference value. Then for reproducibility check, effective porosity measurements with vacuum saturation of 2, 4, and 8 samples simultaneously have been performed. And finally, repeated measurements for 3 times for each sample are made for repeatability check. Average deviation from the reference set in solid weight showed 0.00 $g/cm^3$, which means perfect repeatability and reproducibility. For effective porosity, average deviations are less than 0.07% and 0.05% in repeatability and reproducibility test sets, respectively, which are in good agreement too. Most of porosities measured in reproducibility test lies within the deviation range in repeatability test sets. Thus, simultaneous vacuum saturation of several samples has little impact on the effective porosity measurement when high vacuum pressure of 1 torr is used. Air temperature can cause errors on submerged weight read and even effective porosity, because it is closely related to the temperature, density, and buoyancy of water. Consequently, for accurate measurement of effective porosity in a laboratory, efforts for maintaining air or water temperature constant during the experiment, or a temperature correction from other information are needed.

• Korean Journal of Soil Science and Fertilizer
• /
• v.31 no.2
• /
• pp.85-94
• /
• 1998

Due to relatively high permittivity of water in soils, we placed the soil condenser into soils to measure the soil moisture content. The soil condenser was made with two insulated iron sticks. The capacitance of the soil condenser was determined by the pulse period from RC type oscillation circuit and the highest voltage output accepting 10MHz pulse. After zero point adjustment, the measured relative capacitance percentage (RCS) to the standard condenser obtained by the oscillation circuit almost linearly correlated with the end depth of the sensor submerged in water. The RC type oscillation was disturbed by many sensor installed in a close distance in one place, presumably resulting in that the sensor sticks played as a interfering antennas generating or accepting electron waves from them. The temperature dependance of the output from the sensors could be corrected through experimentally determined revision function. Although lineal correlation was found between soil moisture and RCS, users should derive their own correlation function for every sensor to measure soil moisture, because the outputs were influenced by the installation depth and layout in the soil. The voltage type sensor responded inversely with soil moisture content and so was not suitable to the accurate measurement of soil moisture, but allows high economic benefit in various application such as simplified measurement of soil moisture and irrigation line control because of its low component count. The voltage type moisture sensor could be reinforced by relay controlling circuit to open and to close the solenoid valves respectively at optimal limits of the least and the most soil moisture according to user's adjustment.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.26 no.2
• /
• pp.84-88
• /
• 2016

AlN single crystals were grown by the PT (Physical vapor transport) method with position-changable induction coil. And the graphite crucible dimensioned ${\Phi}90{\times}H120$ was used on processing. The temperature was $1950{\sim}2050^{\circ}C$ and ambient pressure was 150~1 Torr. And the hot-zone was changed according to times on growing for result comparison. When hot-zone by coil is located below far enough (> 40 mm) from AlN crystal concentration position, the as-grown crystals physical size is better ($300{\mu}m/hr$) than another condition, but the condition-reproducibility was very poor. However the closer the distance between hot-zone and AlN growing posion, the smaller the size of as-grown crystal and the rarer the generation of the crystal nuclear, but the crystal growing condition is stable for quality. The best condition for both growth rate and quality is gained when the starting position of hot-zone coil is about 20 mm distance from growing position. For the best growth condition, the position of hot-zone is very sensitive factor and the further more the condition of speed of coil shift also must control.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.8
• /
• pp.340-346
• /
• 2002

Capacitor material utilized in the downsizing passive devices and integration of passive devices requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. common capacitor materials, $Al_2O_3$, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$, TaN and et al., used until recently have reached their physical limits in their application to integration of passive devices. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism. This study presents the dielectric properties $Ta_2O_{5}$ MIM capacitor structure Processed by $O_2$ RTA oxidation. X-ray diffraction patterns showed the existence of amorphous phase in $600^{\circ}C$ annealing under the $O_2$ RTA and the formation of preferentially oriented-$Ta_2O_{5}$ in 650, $700^{\circ}C$ annealing and the AES depth profile showed $O_2$ RTA oxidation effect gives rise to the $O_2$ deficientd into the new layer. The leakage current density respectively, at 3~1l$\times$$10_{-2}$(kV/cm) were $10_{-3}$~$10_{-6}$(A/$\textrm{cm}^2$). In addition, behavior is stable irrespective of applied electric field. the frequency vs capacitance characteristic enhanced stability more then $Ta_2O_{5}$ thin films obtained by $O_2$ reactive sputtering. The capacitance vs voltage measurement that, Vfb(flat-band voltage) was increase dependance on the $O_2$ RTA oxidation temperature.