• 한국작물학회지
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• 제48권5호
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• pp.397-401
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• 2003

This experiment was conducted to know the characteristics of kernel growth as affected by various temperature regimes during grain filling using the varieties Hwaseongbyeo, Ilpumbyeo and Chucheongbyeo. The rice plants tested were grown in the natural condition at 1/5000a Wagner pots until flowering. After flowering, the rice plants were moved to controlled temperature conditions in a phytotron. The minimum/maximum daily temperature in the phytotron was controlled by 12/18, 15/21, 18/24, 21/27, and 24/$30^{\circ}C$, respectively. The grain weights were measured every three days after treatment. The mean daily kernel growth rate during active grain filling period showed different responses among varieties under various temperature regimes. The kernel growth rate of Chucheongbyeo was seriously reduced as temperature regimes were decreased. However, that of Ilpumbyeo was not influenced so critically. Ilpumbyeo showed some advantages in grain filling under low temperature regimes compared to Chucheongbyeo. The lag phase in grain filling of Chucheongbyeo was the longest among tested varieties, followed by Hwaseongbyeo under daily mean temperature regime of $15^{\circ}C$. Kernel weight of Ilpumbyeo increased fast in early grain filling phase under low temperature. This characteristic may be favorable for grain filling in temperate zone where the daily mean temperature is drastically dropped during grain filling period. Regression analysis with kernel growth rate and temperature showed the estimated critical low temperature for grain filling among varieties were $9^{\circ}C$, $12^{\circ}C$, $13^{\circ}C$ in Ilpumbyeo, Hwaseongbyeo and Chucheongbyeo, respectively. Under moderate temperature the duration of grain filling of Ilpumbyeo was longer than that of Chucheongbyeo. However, Under low temperature that of Ilpumbyeo was more favorable than Chucheongbyeo.

• Computers and Concrete
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• 제8권3호
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• pp.293-309
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• 2011

A long-term structural health monitoring (SHM) system comprising over 700 sensors of sixteen types has been implemented on the Guangzhou Television and Sightseeing Tower (GTST) of 610 m high for real-time monitoring of the structure at both construction and service stages. As part of this sophisticated SHM system, 48 temperature sensors have been deployed at 12 cross-sections of the reinforced concrete inner structure of the GTST to provide on-line monitoring via a wireless data transmission system. In this paper, the differential temperature profiles in the reinforced concrete inner structure of the GTST, which are mainly caused by solar radiation, are recognized from the monitoring data with the purpose of understanding the temperature-induced structural internal forces and deformations. After a careful examination of the pre-classified temperature measurement data obtained under sunny days and non-sunny days, common characteristic of the daily temperature variation is observed from the data acquired in sunny days. Making use of 60-day temperature measurement data obtained in sunny days, statistical patterns of the daily rising temperature and daily descending temperature are synthesized, and temperature distribution models of the reinforced concrete inner structure of the GTST are formulated using linear regression analysis. The developed monitoring-based temperature distribution models will serve as a reliable input for numerical prediction of the temperature-induced deformations and provide a robust basis to facilitate the design and construction of similar structures in consideration of thermal effects.

• Journal of electromagnetic engineering and science
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• 제5권3호
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• pp.126-131
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• 2005

To increase the efficiency of an applicator during microwave hyperthermia therapy, first, the length from the antenna end to a slot is varied to get the optimal matching of the characteristic impedance at the frequency of 2.45 GHz. Using the electric and thermal constants of biological tissue, we compose a phantom to calculate temperature increment as well as the resonance characteristics and the SAR distributions. The proposed 3-slot sleeve antenna inserted in an applicator plays an effective role in increasing the therapy size in the view of heating performance as electromagnetic energy tends to concentrate on not feed point direction but treatment area. The SAR is then used in combination with a finite difference heat transfer equation to determine the temperature distribution. Also, in order to shorten treatment time and increase therapy size, a square-array structure is suggested and analyzed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1806-1808
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• 1999

The electrical and physical characteristics of MgO and Pt thin-films on Si substrate, deposited by r.f magnetron sputtering. It were analyzed with annealing condition($1000^{\circ}C$ for 120 min) by four point probe, a-step, SEM and XRD. Until $1000^{\circ}C$ of annealing temperature, MgO medium layer had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had $3927ppm/^{\circ}C$ and liner in the temperature range of room temperature ${\sim}400^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.253-256
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• 2014

$Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films of $1.5{\mu}m$ thickness were grown on $Pt/Ti/Gd_3Ga_5O_{12}$ substrate by RF magnetron sputtering at annealing temperatures ranging from $550^{\circ}C$ to $700^{\circ}C$. We evaluated the residual stress, by using a William-Hall plot, as a function of the annealing temperatures of PZT thin film with a constant thickness. As a result, the residual stresses of PZT thin film of $1.5{\mu}m$ thickness were changed by varying the annealing temperature. Also, we measured the hysteresis characteristic of PZT thin films of $1.5{\mu}m$ thickness to evaluate for application of an optoelectronic device.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.76-79
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• 2000

The 3$\mu\textrm{m}$-thick PVDF (Polyvinyiidene fluoride) thin film have been prepared using physical vapor deposition with electric field, and its FT-IR specrum, dielectric property and electric conduction phenomenon have been investigated. Since the characteristic peaks ate detected at 509.45 and 1273.6〔cm〕 in the FT-IR spectrum, we are confirmed that the ${\beta}$ -phase is dominant in the PVDF thin film. In the results of dielectric properties, the PVDF thin film shows anomalous dispersion, i.e. gradual decrease of dielectric constant with increase of frequency, and also that the dielectric absorption point changes from 200Hz to 7000Hz with increasing temperature of thin film, which is consistent with the Debye's theory. The activation energy (ΔH) obtained from temperature dependence of dielectric loss is 21.64 ㎉/㏖. We confirm that the electric conduction mechanism of PVDF thin film is dominated by ionic conduction by investigating the dependence of the leakage current of the thin film on the temperature and the electric field.

• 한국전기전자재료학회논문지
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• 제33권1호
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• pp.60-64
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• 2020

In this study, to develop angle ring pressboards for high voltage transformers, the radius and thickness are modified under the conditions of temperature and humidity. In particular, a pressboard with a thickness of 6 mm and a radius at the angled part were investigated based on the simulation of the principal stress from the angled optimization profile shape. As a result, by the appropriate application of a higher temperature, the solid insulation can be improved to reduce the moisture content for an optimized profile angle of a high voltage transformer. This also results in the improvement of the safety factor by 25%. It is determined that the electrical insulation properties of pressboards in high voltage transformers can be enhanced by improving their properties.

• ETRI Journal
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• 제37권1호
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• pp.118-127
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• 2015

The power consumption of 3D many-core processors can be reduced, and the power delivery of such processors can be improved by introducing voltage island (VI) design using on-chip voltage regulators. With the dramatic growth in the number of cores that are integrated in a processor, however, it is infeasible to adopt per-core VI design. We propose a 3D many-core processor architecture that consists of multiple voltage clusters, where each has a set of cores that share an on-chip voltage regulator. Based on the architecture, the steady state temperature is analyzed so that the thermal characteristic of each voltage cluster is known. In the voltage scaling and task scheduling stages, the thermal characteristics and communication between cores is considered. The consideration of the thermal characteristics enables the proposed VI formation to reduce the total energy consumption, peak temperature, and temperature gradients in 3D many-core processors.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2001년도 춘계학술발표대회 논문집
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• pp.219-223
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• 2001

The on-line cure monitoring during the cure process of composite materials is important for better quality and productivity. The dielectric sensor for cure monitoring consists of base film and electrodes. Because the characteristic of dielectric sensor for the on-line cure monitoring is dependent on the base material, width and number of electrode, etc, the dielectric sensor should be standardized. And the selection of base film material of sensor is very important. In order to prevent the measuring errors generated from the increase of environmental temperature, the base film material should have stable dielectric constant with respect to environmental temperature. In this study, the newly developed dielectric sensor for cure monitoring was designed and the dissipation factor which is function of degree of cure was measured using the sensor. The relationship between the dissipation factor and degree of cure with respect to environmental temperature was investigated.

• 한국세라믹학회지
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• 제22권2호
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• pp.11-16
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• 1985

The semiconducting ceramics having positive temperature coefficient of resistivity in he family of 0.25mol% $Sb_2O_3$ doped barium titanates were prepared with AST ($4Al_2O_3$.$9SiO_2$.$3TiO_2$) and $MnO_2$ as additives and these electrical properties were investigated. The PTCR characteristic in these ceramic materials was improved by the addition of AST and $MnO_2$ because the addition of AST decreased the room temperature resistivity and controlled grin size due to the formation of a liquid phase during sintering and the addition of $MnO_2$ improved by forming acceptor level on the intergranular layer. On dependence on the switching time as switching temperature was increased the initial power and switching time increased.