• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.450.1-450.1
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• 2014

열에너지를 전기에너지로 변환하거나 또는 전기에너지를 열에너지로 직접 변환하는 열전 변환 기술이 주목받고 있다. 열전 변환 효율은 성능지수($ZT={\alpha}^2{\sigma}T{\kappa}^{-1}$)로 평가되며, 여기서 ${\alpha}$, ${\sigma}$, ${\kappa}$, T는 각각 열전재료의 제벡계수, 전기전도도, 열전도도 및 절대온도이다. 따라서 우수한 열전재료는 높은 제벡계수와 전기전도도 그리고 낮은 열전도도를 가져야 한다. Bismuth telluride는 상온영역에서 성능지수가 높은 재료로서, $Bi_2Te_3$에 $Bi_2Se_3$와 고용체를 형성하면 원자의 치환으로 포논산란에 의해 열전도도가 낮아지고, 도핑으로 전기적 특성을 조절하여 성능지수를 향상시킬 수 있다. 본 연구에서는 진공밀폐 용해법으로 $Bi_2Te_{2.85}Se_{0.15}:I_m$ (m=0.0~0.045) 고용체를 합성하여 상분석을 실시하고, 전자 이동특성 및 열전 특성을 평가하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.101-102
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• 2005

Cadmium telluride (CdTe) films have been prepared on Coming 7059 glass, molybdemium (Mo), and polyimide (PI) substrates by r.f. magnetron sputtering technique. The influence of the sputter pressure on the structural and optical properties of these films was evaluated. In addition, a comparison of the properties of the films deposited on different substrates was performed.

• Journal of the Korean Solar Energy Society
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• v.28 no.3
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• pp.21-26
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• 2008

Solar cells are renewable energy source which is not only environmentally friendly but also economically viable. For that matter, thin film materials are in observed with great in terest by a number of sources throughout the nations. Among these, CdTe (Cadium telluride) and CIS (copper indium diselenide) are the latest commercial products that are gathering attention in the solar cells markets. However there are some downsides to this newly invention. Since the materials are embedded, in the occasion of damage, certain amount of module residue can be released to water or soil. This paper outlines the results of our outdoor leaching experiments on photovoltaic (PV) samples broken into small fragments and been observed for 1 year.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.187-198
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• 2003

Zinc selenide (ZnSe) single crystals hold promise for many electro-optics, acousto-optic and green laser generation applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method based on the dissociative sublimation. We investigate the effects of diffusive-convection on the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration. Our results show that for the ratios of partial pressures, s=0.2 and 2.9, the growth rate increases with the Peclet number and the temperature differences between the source and crystal. As the ratio of partial pressures approaches the stoichiometric value of 2, the rate increases. The mass fluk based on one dimensional (1D model) flow for low vapor pressure system fall within the range of the predictions (2D model) obtained by solving the coupled set of conservation equations, which indicates the flow fields would be advective-diffusive. Therefore, the rate and the flow fields are independent of gravity acceleration levels.

• Journal of Magnetics
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• v.10 no.4
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• pp.149-151
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• 2005

The electric properties of a single crystal bismuth telluride doped with a small concentration of Erbium, $Bi_{z-x}Er_xTe_3$ with x = 0.002, are investigated as a function of temperature. The resistivity was obtained by using the van der Pauw method. The measured electrical resistivity is 78 ${\mu}{\Omega}cm$ at 4.2 K. The charge density of $Bi_{z-x}Er_xTe_3$ is found to be $2{\times}10^{19}/cm^3$ at 4.2 K. It turns out that $Bi_{z-x}Er_xTe_3$ is a p-type semiconductor. It is discussed that the high mobility and less density support that $Bi_{z-x}Er_xTe_3$ is a potential sensor with high energy resolution. Comparison with an established material (i.e. Au:Er alloy) is also discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.106-107
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• 2006

Cadmium telluride (CdTe) films have been prepared on Corning 7059 glass, molybdenum (Mo), and polyimide (PI) substrates by r.f. magnetron sputtering technique. The influence of the sputter pressure on the structural and optical properties of these films was evaluated. In addition, a comparison of the properties of the films deposited on fferent substrates was performed.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.109-109
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• 2012

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.103-103
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• 2005

• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.571-575
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• 2017

In this study, cadmium telluride (CdTe) quantum dots were synthesized by using ultrasonic irradiation method. Optical properties and structural characteristics of the CdTe quantum dots were analyzed by two main variables; the ratio of the precursor and the synthesis time. As the synthesis time increased, the band gap reduction was observed with the growth of CdTe quantum dots. As for the luminescence properties, the red shift appeared at 510~610 nm wavelength range. Also, it was confirmed that the red shift occurs rapidly as the ratio of Te increases. According to PL peak intensity, the highest intensity was shown at 180 to 240 min. Structural characteristics of CdTe quantum dots were investigated through XRD and TEM, and the cubic zinc blend structure was observed. The size of quantum dots was about 2.5 nm and uniformly dispersed when the synthesis time took 210 min. In addition, the apparent crystallinity was discovered in FFT image.

• Current Applied Physics
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• v.18 no.12
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• pp.1513-1522
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• 2018

Bismuth telluride ($Bi_2Te_3$) thin films were prepared with various electrolyte temperatures ($10^{\circ}C-70^{\circ}C$) and concentrations [$Bi(NO_3)_3$ and $TeO_2:1.25-5.0mM$] in this study. The surface morphologies differed significantly between the experiments in which these two electrodeposition conditions were separately adjusted even though the applied current density was in the same range in both cases. At higher electrolyte temperatures, a dendrite crystal structure appeared on the film surface. However, the surface morphology did not change significantly as the electrolyte concentration increased. The dendrite crystal structure formation in the former case may have been caused by the diffusion lengths of the ions increasing with increasing electrolyte temperature. In such a state, the reactive points primarily occur at the tops of spiked areas, leading to dendrite crystal structure formation. In addition, the in-plane thermoelectric properties of $Bi_2Te_3$ thin films were measured at approximately 300 K. The power factor decreased drastically as the electrolyte temperature increased because of the decrease in electrical conductivity due to the dendrite crystal structure. However, the power factor did not strongly depend on the electrolyte concentration. The highest power factor [$1.08{\mu}W/(cm{\cdot}K^2$)] was obtained at 3.75 mM. Therefore, to produce electrodeposited $Bi_2Te_3$ films with improved thermoelectric performances and relatively high deposition rates, the electrolyte temperature should be relatively low ($30^{\circ}C$) and the electrolyte concentration should be set at 3.75 mM.