• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.278-281
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• 2003

The p-CIn2Te4 single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown CdIn2Te4 crystal and the various heat-treated crystals, the (Do, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the CdIn2Te4:Cd, while the (Ao, X) emission completely disappeared in the CdIn2Te4:Cd. However, the (Ao, X) emission in the photoluminescence spectrum of the CdIn2Te4:Te was the dominant intensity like an as-grown CdIn2Te4 crystal. These results indicated that the (Do, X) is associated with VTe acted as donor and that the (Ao, X) emission is related to VCd acted as acceptor, respectively. The p-CdIn2Te4 crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of (Do, Ao) emission and its TO phonon replicas is related to the interaction between donors such as VTe or Cdint, and accepters such as VCd or Teint. Also, the In in the CdIn2Te4 was confirmed not to form the native defects because it existed in the stable form of bonds.

• Journal of Powder Materials
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• v.22 no.4
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• pp.254-259
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• 2015

$Bi_2Te_3$ related compounds show the best thermoelectric properties at room temperature. However, n-type $Bi_2Te_{2.7}Se_{0.3}$ showed no improvement on ZT values. To improve the thermolectric propterties of n-type $Bi_2Te_{2.7}Se_{0.3}$, this research has Cu-doped n-type powder. This study focused on effects of Cu-doping method on the thermoelectric properties of n-type materials, and evaluated the comparison between the Cu chemical and mechanical doping. The synthesized powder was manufactured by the spark plasma sintering(SPS). The thermoelectric properties of the sintered body were evaluated by measuring their Seebeck coefficient, electrical resistivity, thermal conductivity, and hall coefficient. An introduction of a small amount of Cu reduced the thermal conductivity and improved the electrical properties with Seebeck coefficient. The authors provided the optimal concentration of $Cu_{0.1}Bi_{1.99}Se_{0.3}Te_{2.7}$. A figure of merit (ZT) value of 1.22 was obtained for $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu chemical doping, which was obviously higher than those of $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu mechanical doping (ZT=0.56) and Cu-free $Bi_2Se_{0.3}Te_{2.7}$ (ZT=0.51).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.580-580
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• 2012

Heterostructures has unique and important properties, which may be helpful for finding many potential applications in the field of electronic, thermoelectric, and optoelectronic devices. We synthesized CdTe/Te core-shell heterostructures by vapor-solid process at low temperatures using a quartz tube furnace. Two step vapor-solid processes were employed. First, various tellurium structures such as nanowires, nanorods, nanoneedles, microtubes and microrods were synthesized under various deposition conditions. These tellurium nanostructures were then used as substrates in the second step to synthesize the CdTe/Te core-shell heterostructures. Using this method, various sizes, shapes and types of CdTe/Te core-shell structures were fabricated under a range of conditions. These structures were analysed by scanning electron microscopy, high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. The vapor phase process at low temperatures appears to be an efficient method for producing a variety of Cd/Te hetero-nanostructures. In addition, the hetero-nanostructures can be tailored to the needs of specific applications by deliberately controlling the synthetic parameters.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.379-385
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• 2006

Single crystal of p-$CdIn_{2}Te_{4}$ was grown in a three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by x-ray diffraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_{2}Te_{4}$ crystal and the various heat-treated crystals, the ($D^{o}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Cd, while the ($A^{o}$, X) emission completely disappeared in the $CdIn_{2}Te_{4}$:Cd. However, the ($A^{o}$, X) emission in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Te was the dominant intensity like in the as-grown $CdIn_{2}Te_{4}$ crystal. These results indicated that the ($D^{o}$, X) is associated with $V_{Te}$ which acted as donor and that the ($A^{o}$, X) emission is related to $V_{Cd}$ which acted as acceptor, respectively. The p-$CdIn_{2}Te_{4}$ crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of ($D^{o},{\;}A^{o}$) emission and its to phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and acceptors such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_{2}Te_{4}$ was confirmed not to form the native defects because it existed in a stable bonding form.

• Bulletin of the Korean Chemical Society
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• v.35 no.10
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• pp.2895-2900
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• 2014

We fabricated quantum dot-sensitized solar cells (QDSSCs) using cadmium sulfide (CdS) and cadmium telluride (CdTe) quantum dots (QDs) as sensitizers. A spin coated $TiO_2$ nanoparticle (NP) film on tin-doped indium oxide glass and sputtered Au on fluorine-doped tin oxide glass were used as photo-anode and counter electrode, respectively. CdS QDs were deposited onto the mesoporous $TiO_2$ layer by a successive ionic layer adsorption and reaction method. Pre-synthesized CdTe QDs were deposited onto a layer of CdS QDs using a direct adsorption technique. CdS/CdTe QDSSCs had high light harvesting ability compared with CdS or CdTe QDSSCs. QDSSCs incorporating single-walled carbon nanotubes (SWNTs), sprayed onto the substrate before deposition of the next layer or mixed with $TiO_2$ NPs, mostly exhibited enhanced photo cell efficiency compared with the pristine cell. In particular, a maximum rate increase of 24% was obtained with the solar cell containing a $TiO_2$ layer mixed with SWNTs.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.383-393
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• 1998

Cadmium telluride films were grown by close-spaced sublimation(CSS) technique. The effects of various deposition parameters such as ambient pressure, source- to-substrate spacings and temperatures on the growth rate and the microstructure were investigated. The growth mode of CdTe films showed a transition as the ambient pressure changed. This transition was interpreted in terms of the diffusion limited transport and the sublimation limited transport of Cd and $Te_2$ vapors. Experimental results indicated that the transition of growth mode was related with the mean free path of gas molecules. The growth rate and the microstructure of CdTe films were affected by the source type- bulk or powder. This change was due to the temperature difference at the source surface. XRD and SEM analysis showed that the growth rate was one of the main factors to determine CdTe microstructures.

• Journal of Powder Materials
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• v.18 no.5
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• pp.437-442
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• 2011

The present study focused on the synthesis of Bi-Te-Se-based powder by an oxide-reduction process, and analysis of the thermoelectric properties of the synthesized powder. The phase structure, chemical composition, and morphology of the synthesized powder were analyzed by XRD, EPMA and SEM. The synthesized powder was sintered by spark plasma sintering. The thermoelectric properties of the sintered body were evaluated by measuring its Seebeck coefficient, electrical resistivity, and thermal conductivity. $Bi_2Te_{2.7}Se_{0.3}$ powder was synthesized from a mixture of $Bi_2O_3$, $TeO_2$, and $SeO_2$ powders by mechanical milling, calcination, and reduction. The sintered body of the synthesized powder exhibited n-type thermoelectric characteristics. The thermoelectric properties of the sintered bodies depend on the reduction temperature. The Seebeck coefficient and electrical resistivity of the sintered body were increased with increasing reduction temperature. The sintered body of the $Bi_2Te_{2.7}Se_{0.3}$ powder synthesized at $360^{\circ}C$ showed about 0.5 of the figure of merit (ZT) at room temperature.

• Journal of Radiation Protection and Research
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• v.41 no.4
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• pp.328-332
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• 2016

Background: Boron Neutron Capture Therapy (BNCT) is a new radiation therapy. In BNCT, there exists some very critical problems that should be solved. One of the severest problems is that the treatment effect cannot be known during BNCT in real time. We are now developing a SPECT (single photon emission computed tomography) system (BNCT-SPECT), with a cadmium telluride (CdTe) semiconductor detector. BNCT-SPECT can obtain the BNCT treatment effect by measuring 478 keV gamma-rays emitted from the excited state of $^7Li$ nucleus created by $^{10}B(n,{\alpha})$ $^7Li$ reaction. In the previous studies, we investigated the feasibility of the BNCT-SPECT system. As a result, the S/N ratio did not meet the criterion of S/N > 1 because deterioration of the S/N ratio occurred caused by the influence of Compton scattering especially due to capture gamma-rays of hydrogen. Materials and Methods: We thus produced an arrayed detector with two CdTe crystals to test cross talk phenomenon and to examine an anti-coincidence detection possibility. For more precise analysis for the anti-coincidence detection, we designed and made a collimator having a similar performance to the real BNCT-SPECT. Results and Discussion: We carried out experiments with the collimator to examine the effect of cross talk of scattering gamma-rays between CdTe elements more practically. As a result of measurement the coincidence events were successfully extracted. Conclusion: We are now planning to carry out evaluation of coincidence rate from the measurement and comparison of it with the numerical calculations.

• Nuclear Engineering and Technology
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• v.49 no.4
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• pp.776-780
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• 2017

To avoid imaging artifacts and interpretation mistakes, an improvement of the uniformity in gamma camera systems is a very important point. We can expect excellent uniformity using cadmium zinc telluride (CZT) photon counting detector (PCD) because of the direct conversion of the gamma rays energy into electrons. In addition, the uniformity performance such as integral uniformity (IU), differential uniformity (DU), scatter fraction (SF), and contrast-to-noise ratio (CNR) varies according to the energy window setting. In this study, we compared a PCD and conventional scintillation detector with respect to the energy windows (5%, 10%, 15%, and 20%) using a $^{99m}Tc$ gamma source with a Geant4 Application for Tomography Emission simulation tool. The gamma camera systems used in this work are a CZT PCD and NaI(Tl) conventional scintillation detector with a 1-mm thickness. According to the results, although the IU and DU results were improved with the energy window, the SF and CNR results deteriorated with the energy window. In particular, the uniformity for the PCD was higher than that of the conventional scintillation detector in all cases. In conclusion, our results demonstrated that the uniformity of the CZT PCD was higher than that of the conventional scintillation detector.

• Nuclear Engineering and Technology
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• v.51 no.5
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• pp.1417-1427
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• 2019

In this study, we evaluated the performance of a commercial pixelated cadmium zinc telluride (CZT) detector for spectroscopy and identified its feasibility as a Compton camera for radiation monitoring in a nuclear power plant. The detection system consisted of a $20mm{\times}20mm{\times}5mm$ CZT crystal with $8{\times}8$ pixelated anodes and a common cathode, in addition to an application specific integrated circuit. The performance of the various radioisotopes $^{57}Co$, $^{133}Ba$, $^{22}Na$, and $^{137}Cs$ was evaluated. In general, the amplitude of the induced signal in a CZT crystal depends on the interaction position and material non-uniformity. To minimize this dependency, a drift time correction was applied. The depth of each interaction was calculated by the drift time and the positional dependency of the signal amplitude was corrected based on the depth information. After the correction, the Compton regions of each spectrum were reduced, and energy resolutions of 122 keV, 356 keV, 511 keV, and 662 keV peaks were improved from 13.59%, 9.56%, 6.08%, and 5%-4.61%, 2.94%, 2.08%, and 2.2%, respectively. For the Compton imaging, simulations and experiments using one $^{137}Cs$ source with various angular positions and two $^{137}Cs$ sources were performed. Individual and multiple sources of $^{133}Ba$, $^{22}Na$, and $^{137}Cs$ were also measured. The images were successfully reconstructed by weighted list-mode maximum likelihood expectation maximization method. The angular resolutions and intrinsic efficiency of the $^{137}Cs$ experiments were approximately $7^{\circ}-9^{\circ}$ and $5{\times}10^{-4}-7{\times}10^{-4}$, respectively. The distortions of the source distribution were proportional to the offset angle.