• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1349-1354
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• 2011

In this work, we fabricated the CdZnS/CdTe heterojunction and investigated the C-V characteristics to determine the depletion width and the charge density distribution. A parallel experiment on CdS/CdTe heterojunction was also carried out for comparison. The depletion region width, for CdZnS/CdTe heterojunction, was nearly constant, regardless of bias voltage. However, the depletion region was wider than that of CdS/CdTe heterojunction due to high resistivity of CdZnS film. The interface charge density of CdZnS/CdTe heterojunction was increased linearly with the bias voltage and showed lower values than those for CdS/CdTe junction. The open circuit voltage of CdZnS/CdTe heterojunction solar cells increased with zinc mole ratio due to reducing of the electron affinity difference between CdZnS and CdTe films. However, the increase of series resistance due to the high resistivity of Cd1-xZnxS films results in reducing conversion efficiency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.7
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• pp.1647-1652
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• 2010

A CdS film has been used as a window layer in CdTe and Cu(In,Ga)$Se_2$ thin films solar cell. Partial substitution of Zn for Cd increases the photocurrent and the open-circuit voltage by providing a match in the electron affinities of the two materials and the higher band gap. In this paper, CdZnS/CdTe and CdS/CdTe heterojunctions were fabricated and the electrical characteristics were investigated. Current-voltage-temperature measurements showed that the current transport for CdS/CdTe heterojunction was controlled by both tunneling and interface recombination. However, CdZnS/CdTe heterojunction displayed different current transport mechanism with the operating temperature. For above room temperature, the current transport of device was generation/recombination in the depletion region and was the leakage current and/or tunneling in the range below room temperature.

• Journal of Powder Materials
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• v.13 no.5 s.58
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• pp.313-320
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• 2006

The present study is to analyze the thermoelectric properties of $Bi_{0.4}Sb_{1.6}Te_3$ thermoelectric materials fabricated by the mechanical grinding process. The $Bi_{0.4}Sb_{1.6}Te_3$ powders were prepared by the combination of mechanical milling and reduction treating methods using simply crushed pre-alloyed $Bi_{0.4}Sb_{1.6}Te_3$ powder. The mechanical milling was carried out using the tumbler-ball mill and planetary ball mill. The tumbler-ball milling had an effect on the carrier mobility rather than the carrier concentration, whereas, the latter on the carrier concentration. The specific electric resistivity and Seebeck coefficient decreased with increasing the reduction-heat-treatment time. The thermal conductivity continuously increased with increasing the reduction-heat-treatment time. The figure of merit of the $Bi_{0.4}Sb_{1.6}Te_3$ sintered body prepared by the mechanical grinding process showed higher value than one of the sintered body of the simply crushed powder.

• Journal of Radiation Protection and Research
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• v.41 no.2
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• pp.87-91
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• 2016

Background: A hand-held detector for an emergency response was developed for nuclide identification and to estimate the information of the ambient dose rate in the scene of an accident as well as the radioactivity of the contaminants. Materials and Methods: To achieve this, the most suitable sensor was first selected as a cadmium zinc telluride (CZT) semiconductor and the signal processing unit from a sensor and the signal discrimination and storage unit were successfully manufactured on a printed circuit board. Results and Discussion: The performance of the developed signal processing unit was then evaluated to have an energy resolution of about 14 keV at 662 keV. The system control unit was also designed to operate the CZT detector, monitor the detector, battery, and interface status, and check and transmit the measured results of the ambient dose rate and radioactivity. In addition, a collimator, which can control the inner radius, and the airborne dust sampler, which consists of an air filter and charcoal filter, were developed and mounted to the developed CZT detector for the quick and efficient response of a nuclear accident. Conclusion: The hand-held CZT detector was developed to make the in-situ gamma-ray spectrometry and its performance was checked to have a good energy resolution. In addition, the collimator and the airborne dust sampler were developed and mounted to the developed CZT detector for a quick and efficient response to a nuclear accident.

• Journal of Radiation Protection and Research
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• v.41 no.2
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• pp.81-86
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• 2016

Background: For positron emission tomography (PET) application, cadmium zinc telluride (CZT) has been investigated by several institutes to replace detectors from a conventional system using photomultipliers or Silicon-photomultipliers (SiPMs). The spatial and energy resolution in using CZT can be superior to current scintillator-based state-of-the-art PET detectors. CZT has been under development for several years at the Korea Atomic Energy Research Institute (KAERI) to provide a high performance gamma ray detection, which needs a single crystallinity, a good uniformity, a high stopping power, and a wide band gap. Materials and Methods: Before applying our own grown CZT detectors in the prototype PET system, we investigated preliminary research with a developed discrete type data acquisition (DAQ) system for coincident events at 128 anode pixels and two common cathodes of two CZT detectors from Redlen. Each detector has a $19.4{\times}19.4{\times}6mm^3$ volume size with a 2.2 mm anode pixel pitch. Discrete amplifiers consist of a preamplifier with a gain of $8mV{\cdot}fC^{-1}$ and noise of 55 equivalent noise charge (ENC), a $CR-RC^4$ shaping amplifier with a $5{\mu}s$ peak time, and an analog-to-digital converter (ADC) driver. The DAQ system has 65 mega-sample per second flash ADC, a self and external trigger, and a USB 3.0 interface. Results and Discussion: Characteristics such as the current-to-voltage curve, energy resolution, and electron mobility life-time products for CZT detectors are investigated. In addition, preliminary results of gamma ray imaging using 511 keV of a $^{22}Na$ gamma ray source were obtained. Conclusion: In this study, the DAQ system with a CZT radiation sensor was successfully developed and a PET image was acquired by two sets of the developed DAQ system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.231-231
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• 2010

Thermoelectric properties of a multi-layered thin film, which was composed with indium selenide and bismuth telluride, were investigated. The structure of the layered thin film is Bi-Te /In-Se/Bi-Te and it was prepared on sapphire substrate by RF magnetron sputter using stoichiometric $Bi_2Te_3$ (99.9%) and $In_2Se_3$(99.99%) target at room temperature. Then, it was annealed at temperature range of 150 - $500^{\circ}C$ in Ar ambient. Structural characterizations were done using X-ray diffraction(XRD, BRUKER, D8, 60kW) and transmission electron microscopy (TEM, FEI, Tecnai, F30 S-Twin), respectively. Cross-section of multi-layer structure was observed by Scanning electron microscopy (SEM). The resistivity and Seebeck coefficient of these samples were also measured by conventional equipment at room temperature. The maximum value of power factor was $1.16\;{\mu}W/k^2m$ at annealing temperature of $400^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.49-54
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• 2010

The n-type $Bi_2(Te,Se)_3$ powders were fabricated by melting/grinding method and were hot-pressed in order to compare thermoelectric properties of the hot-pressed specimens with those of the $Bi_2(Te,Se)_3$ ingot. Effects of mechanical milling treatment of the $Bi_2(Te,Se)_3$ powders on thermoelectric characteristics of a hot-pressed specimen were also examined. The hot-pressed $Bi_2(Te,Se)_3$ exhibited power factors of $27.3{\sim}32.3{\times}10^{-4}W/m-K^2$ which were superior to $24.2{\times}10^{-4}W/m-K^2$ of the ingot. The $Bi_2(Te,Se)_3$, hot-pressed after mechanical milling treatment of the powders, possessed a non-dimensional figure-of-merit of 1.02 at $100^{\circ}C$ and exhibited extrinsic-intrinsic transition at $130^{\circ}C$.

• Journal of the Korean Society for Nondestructive Testing
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• v.28 no.2
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• pp.119-124
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• 2008

In recent years, gradually increasing interest has been directed to the use of terahertz technology in nondestructive testing and non-invasive measurements, and terahertz time domain spectroscopy (THz-TDS) has become a key technology in such applications. This paper deals with the terahertz pulse generation from cadmium telluride via optical rectification process of femto-second infrared laser pulses. The measured terahertz spectrum is compared with the result of model calculation based on space-time domain nonlinear Maxwell equations for coherent frequency mixing process. The propagation process of terahertz and infra-red pulses in the material as well as the surface interference and free space diffraction effects are also considered. The experimental results are in good agreements with the calculated spectrum.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.41-49
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• 2008

Thermoelectric properties of the n-type Bi-Te and the p-type Bi-Sb-Te films were measured and the growth behaviors of the electrodeposited Bi-Te and Bi-Sb-Te nanowires were characterized. Filling ratios of 81% and 77% were obtained for electrodeposition of the Bi-Te and the Bi-Sb-Te nanowires, respectively, into the nano pores of 200 nm-diameter of an alumina template. A thermoelectric module, composed of the Bi-Te nanowires and the Bi-Sb-Te nanowires was processed by electrodeposition, and a resistance value of $15{\Omega}$ was measured between the Ni electrodes formed on the Bi-Te nanowires and the Bi-Sb-Te nanowires of the module.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.7-7
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• 2009

Lead telluride (PbTe) is a very promising thermoelectric material due to its narrow band gap (0.31 eV at 300 K), face-centered cubic structure and large average excitonic Bohr radius (46 nm) allowing for strong quantum confinement within a large range of size. In this work, we present the thermoelectric properties of individual single-crystalline PbTe nanowires grown by a vapor transport method. A combination of electron beam lithography and a lift-off process was utilized to fabricate inner micron-scaled Cr (5 nm)/Au (130 nm) electrodes of Rn (resistance of a near electrode), Rf (resistance of a far electrode) and a microheater connecting a PbTe nanowire on the grid of points. A plasma etching system was used to remove an oxide layer from the outer surface of the nanowires before the deposition of inner electrodes. The carrier concentration of the nanowire was estimated to be as high as $3.5{\times}10^{19}\;cm^{-3}$. The Seebeck coefficient of an individual PbTe nanowire with a radius of 68 nm was measured to be $S=-72{\mu}V/K$ at room temperature, which is about three times that of bulk PbTe at the same carrier concentration. Our results suggest that PbTe nanowires can be used for high-efficiency thermoelectric devices.