Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Thermoelectric Properties of the n-type $Bi_2(Te,Se)_3$ Processed by Hot Pressing

n형 $Bi_2(Te,Se)_3$ 가압소결체의 열전특성

  • Park, D.H. (Department of Materials Science and Engineering, Hongik University) ;
  • Roh, M.R. (Department of Materials Science and Engineering, Hongik University) ;
  • Kim, M.Y. (Department of Materials Science and Engineering, Hongik University) ;
  • Oh, T.S. (Department of Materials Science and Engineering, Hongik University)
  • 박동현 (홍익대학교 신소재공학과) ;
  • 노명래 (홍익대학교 신소재공학과) ;
  • 김민영 (홍익대학교 신소재공학과) ;
  • 오태성 (홍익대학교 신소재공학과)
  • Received : 2010.06.02
  • Accepted : 2010.06.25
  • Published : 2010.06.30
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Abstract

The n-type $Bi_2(Te,Se)_3$ powders were fabricated by melting/grinding method and were hot-pressed in order to compare thermoelectric properties of the hot-pressed specimens with those of the $Bi_2(Te,Se)_3$ ingot. Effects of mechanical milling treatment of the $Bi_2(Te,Se)_3$ powders on thermoelectric characteristics of a hot-pressed specimen were also examined. The hot-pressed $Bi_2(Te,Se)_3$ exhibited power factors of $27.3{\sim}32.3{\times}10^{-4}W/m-K^2$ which were superior to $24.2{\times}10^{-4}W/m-K^2$ of the ingot. The $Bi_2(Te,Se)_3$, hot-pressed after mechanical milling treatment of the powders, possessed a non-dimensional figure-of-merit of 1.02 at $100^{\circ}C$ and exhibited extrinsic-intrinsic transition at $130^{\circ}C$.

n형 $Bi_2(Te,Se)_3$ 분말을 용해/분쇄법으로 제조하여 가압소결 후, 가압소결체의 열전특성을 $Bi_2(Te,Se)_3$ 잉곳과 비교하였으며, $Bi_2(Te,Se)_3$ 열전분말의 기계적 밀링처리가 가압소결체의 열전특성에 미치는 영향을 분석하였다. $Bi_2(Te,Se)_3$ 잉곳은 $24.2{\times}10^{-4}W/m-K^2$의 power factor를 나타내었으며, 이를 가압소결함으로써 power factor가 $27.3{\sim}32.3{\times}10^{-4}W/m-K^2$로 향상되었다. 기계적 밀링처리한 분말로 제조한 $Bi_2(Te,Se)_3$ 가압소결체는 $100^{\circ}C$에서 1.02의 무차원 성능지수를 나타내었으며, $130^{\circ}C$에서 외인성-내인성 천이거동을 나타내었다.

Keywords

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