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http://dx.doi.org/10.6109/jkiice.2010.14.7.1647

A study on the electrical characteristics of CdZnS/CdTe heterojunction  

Lee, Jae-Hyeong (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.14, no.7, 2010 , pp. 1647-1652 More about this Journal
Abstract
A CdS film has been used as a window layer in CdTe and Cu(In,Ga)$Se_2$ thin films solar cell. Partial substitution of Zn for Cd increases the photocurrent and the open-circuit voltage by providing a match in the electron affinities of the two materials and the higher band gap. In this paper, CdZnS/CdTe and CdS/CdTe heterojunctions were fabricated and the electrical characteristics were investigated. Current-voltage-temperature measurements showed that the current transport for CdS/CdTe heterojunction was controlled by both tunneling and interface recombination. However, CdZnS/CdTe heterojunction displayed different current transport mechanism with the operating temperature. For above room temperature, the current transport of device was generation/recombination in the depletion region and was the leakage current and/or tunneling in the range below room temperature.
Keywords
Cadmium zinc sulfide(CdZnS); cadmium telluride(CdTe); heterojunction; solar cell; electrical characteristic;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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