• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.245-251
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• 2005

A high performance dual rocking magnet sputtering gun has been developed. The rocking magnet sputtering gun introduces full-face erosion by rapidly rocking the magnet in the region where the high plasma density is maintained. The newly developed dual rocking magnet sputtering gun whose target utilization was 77 percent achieved high performance in quality in the view of target utilization and target life-time comparing to the existing magnetron sputtering gun. The PIC-MCC target erosion simulation has been performed simultaneously. Comparing experimental target erosion profiles with simulated target erosion profiles, the simulation could estimate the tendency of the target erosion profiles but could not estimate an exact target erosion profile. If the simulation were improved more precisely, the cost reduction for the development of the multiple rocking magnet sputtering gun would be expected.

• Journal of the Korean institute of surface engineering
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• v.38 no.5
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• pp.179-182
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• 2005

Indium Tin Oxide (ITO) thin films were deposited from various target densities ($98.7\%\~99.6\%$) using RF magnetron sputtering. Effect of the sputtering target densities on the structural, electrical and optical properties of deposited ITO thin films was investigated. The preferable (400) crystalline orientation peak was observed on the films deposited from > $99.0\%$ target density. Higher target density produced films with higher roughness but lower resistivity. All of the deposited films showed optical transmittance more than $85\%$ in the visible wavelength region. It is necessary to use the highest target density for sputtering deposition of ITO thin films.

• Nuclear Engineering and Technology
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• v.53 no.9
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• pp.3026-3034
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• 2021

Multi-target X-ray tube is a new type X-ray source, and can be applied in many fields such as sensitive X-ray fluorescence analysis and medical imaging. In this work, we report an electric field modulation multi-target X-ray tube, which contains four targets (Cr, Ni, Au, Mo) coated on a Beryllium (Be) window. A four-valve electric field deflector was developed to deflect the electron beam to bombard the corresponding targets. Particle dynamics analysis software was employed to simulate the particle tracking of electron beam. The results show that the 30 keV electron beam could get a 6.7 mm displacement on the target plane by 10⁵ V/m electric field. The focus areas are about 2 mm × 5 mm and 4 mm × 2.5 mm after deflection in two directions. Thermal behavior calculated by ANSYS shows that the designed target assembly could withstand a 10 W continuous power. The optimum target thicknesses and emission spectra were obtained by Geant4 when the thickness of Be window was 300 mm and the electron beam incident angle was 0.141 rad. The results indicate that this multi-target X-ray tube could provide different X-ray sources effectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.122-122
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• 1999

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.45-51
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• 2010

We measured the temperature of target surface inducing by various physical phenomenon on magnetron sputtering target and confirmed the possibilities if the temperature distribution could affect plasma and deposited thin film. The target of magnetron sputtering has two types: round type and rectangular type. In a rectangular target, the concentrated discharge area by corner effect by magnetic field and non-uniform erosion of target are generated. And we found the generation of non-uniform temperature distribution on the target surface from this. This area was $10{\sim}20^{\circ}C$ higher than non-sputtering area. And if particles are generated during sputtering process, they were $20^{\circ}C$ higher than the area where is higher than non-sputtering area. These effects result in non-uniformity of thin films, crack of ceramic target, and shortening target life by non-uniform erosion.

• Journal of Powder Materials
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• v.23 no.1
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• pp.1-7
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• 2016

Cu-Mn compacts are fabricated by the pulsed current activated sintering method (PCAS) for sputtering target application. For fabricating the compacts, optimized sintering conditions such as the temperature, pulse ratio, pressure, and heating rate are controlled during the sintering process. The final sintering temperature and heating rate required to fabricate the target materials having high density are $700^{\circ}C$ and $80^{\circ}C/min$, respectively. The heating directly progresses up to $700^{\circ}C$ with a 3 min holding time. The sputtering target materials having high relative density of 100% are fabricated by employing a uniaxial pressure of 60 MPa and a sintering temperature of $700^{\circ}C$ without any significant change in the grain size. Also, the shrinkage displacement of the Cu-Mn target materials considerably increases with an increase in the pressure at sintering temperatures up to $700^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.1-4
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• 2019

Reactive sputtering is widely used because of its high deposition rate and high step coverage. The deposition layer is often affected by target poisoning because the target conditions are changed, as well, by reactive gases during the initial stage of sputtering process. The reactive gas affects the deposition rate and process stability (target poisoning), and it also leads unintended oxide interlayer formation. Although the target poisoning mechanism has been well known, little attention has been paid on understanding the interlayer formation during the reactive sputtering. In this research, we studied the interlayer formation during the reactive sputtering. A DC magnetron sputtering process is carried out to deposit an aluminum oxide film on a silicon wafer. From the real-time process monitoring and material analysis, the target poisoning phenomena changes the reactive gas balance at the initial stage, and affects the interlayer formation during the reactive sputtering process.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.83-84
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.79-79
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.76-76
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• 1995