• Title/Summary/Keyword: tantalate

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Microwave Dielectric Characteristics of Aluminum Magnesium Tantalate Solid Solutions with Variations of Ionic Polarizability and Crystal Structure (이온 분극률과 결정구조에 따른 Aluminum Magnesium Tantalate 고용체의 마이크로파 유전특성)

  • 최지원;하종윤;강종윤;윤석진;윤기현;김현재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.119-122
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    • 2002
  • The calculated and measured dielectric constant of (1-x)(Al$\sub$1/2/Ta$\sub$1/2/)O$_2$-x(Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$(O$\leq$x$\leq$1.0) solid solutions were investigated by variations of ionic polarizability and crystal structure. (Al$\sub$1/2/Ta$\sub$1/2/)O$_2$ and (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$were orthorhombic and tetragonal trirutile structure, respectively. When (Al$\sub$1/2/Ta$\sub$1/2/)O$_2$ was substituted by (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$, the phase transformed to tetragonal structure over 60 mole%. Because the ionic radius of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$was slightly bigger than one of (A1$\sub$1/2/Ta$\sub$1/2)O$_2$, the cell parameters increased with an increase of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$ substitution. The measured dielectric constant increased with an increase of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$ substitution and coincided with dielectric mixing rule and the calculated dielectric constant with the molecular additivity rule. There were some differences between the measured and the calculated dielectric constant. The reason of the lowered dielectric constant comparing with the calculated one was compressed stress due to the electronic structure of tantalum.

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Temperature Dependent Terahertz Generation at Periodically Poled Stoichiometric Lithium Tantalate Crystal Using Femtosecond Laser Pulses

  • Yu, N.E.;Kang, C.;Yoo, H.K.;Jung, C.;Lee, Y.L.;Kee, C.S.;Ko, D.K.;Lee, J.
    • Journal of the Optical Society of Korea
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    • v.12 no.3
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    • pp.200-204
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    • 2008
  • Coherent tunable terahertz generation was demonstrated in periodically poled stoichiometric lithium tantalate crystal via difference frequency generation of femtosecond laser pulses. Simultaneous forward and backward terahertz radiations were obtained around 1.35 and 0.63 THz, respectively at low temperature. By cooling the crystal to reduce losses caused by phonon absorptions, the generated THz bandwidth was as narrow as 23GHz at the center frequency of 0.63 THz. The measurement result of temperature-dependent showed gradual intensity increase of the generated terahertz pulse and red shift of the center frequency as the temperature decrease from 291 to 143 K, but insignificant reduction of the spectral bandwidth. Furthermore, the stoichiometric crystal was very suitable for the suppression of THz loss at low temperature compared to the congruent $LiNbO_3$ crystal.

Synthesis of $Ba(Mg_{1/3}Ta_{2/3})O_3$ Nanopowders by Glycothermal Process

  • Badrakh, Amar;Cho, Hong-Chan;Lim, Dae-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.167-168
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    • 2009
  • Phase pure barium magnesium tantalate $Ba(Mg_{1/3}Ta_{2/3})O_3$(BMT) nanopowders were synthesized at temperature as low as $220^{\circ}C$ through glycothermal reaction by using $Ba(OH)_2{\cdot}8H_2O$, $Mg(NO_3){\cdot}6H_2O$, and $TaCl_5$ as precursors and 1,4-butandiol as solvent. XRD, SEM, and TGA data support that glycothermal processing method provides a simple low temperature route for producing fine grained BMT nanopowders without alkaline mineralizers. BMT nanopowders synthesized at $220^{\circ}C$ showed more homogenous with rounded morphologies.

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Characteristics of Ferroelectric SrBi2Ta2O9 Thin Films deposited by Plasma-Enhanced Atomic Layer Deposition (플라즈마 원자층증착법에 의해 제조된 강유전체 SrBi2Ta2O9박막의 특성)

  • 신웅철;류상욱;유인규;윤성민;조성목;이남열;유병곤;이원재;최규정
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.35-35
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    • 2003
  • Recent progress in the integration of the ferroelectric random access memories (FRAM) has attracted much interest. Strontium bismuth tantalate(SBT) is one of the most attractive materials for use in nonvolatile-memory applications due to low-voltage operations, low leakage current, and its excellent fatigue-free property. High-density FRAMs operated at a low voltage below 1.5V are applicable to mobile devices operated by battery. SBT films thinner than 0.1 #m can be operated at a low voltage, because the coercive voltage (Vc) decreases as the film thickness is reduced. In addition, the thickness of the SBT film will have to be reduced so it can fit between adjacent storage nodes in a pedestal type capacitor in future FRAMs.

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Dielectric Characteristics of $Pb(Sc_{1/2-x} Ta1_{/2+x}) O_{3+x}$ Ceramic System

  • Nam-Kyung Kim;Dwight D. Viehland;David A. Payne
    • The Korean Journal of Ceramics
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    • v.1 no.2
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    • pp.81-85
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    • 1995
  • PST-series spcimens with stoichimetric and nonstoichimtric compositins were prepared and the effects of compositionl modification on phase formation and dielectric presponse were investigated. The phases formed on calcination were mainly perovskite and trace amount of phyrochlore(s), with an increase of the latter phase(s) as the composition became more ononstoichiometric. The sintered samples showed thermal hysteresis and diffuseness in phase transition with a small degree of frequency relaxation. Temperatures corresponding to maximum values of dielectric constant and loss were relatively insensitive to the composition change while the maximum values were very sensitive to that.

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Development of the high-temperature, high-pressure Dynamic pressure sensor with LGT (LGT를 이용한 고온, 고압용 동압 센서 개발)

  • Kwon, Hyuk Jae;Lee, Kyung Il;Kim, Dong Su;Kim, Young Deog;Lee, Young Tae
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.2
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    • pp.17-21
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    • 2012
  • This study developed a high-temperature, high-pressure dynamic pressure sensor using LGT(lanthanum gallium tantalate). The sensitivity of the fabricated dynamic pressure sensor was 2.1 mV/kPa and its nonlinearity was 2.5%FS. We confirmed that the high-temperature dynamic pressure sensor operated stably in high-temperature environment at $500^{\circ}C$. The developed dynamic pressure sensor using LGT is expected to be applicable not only to gas turbines but also in various industrial areas in duding airplanes and power stations.

Ionic Conductivity in Lithium-Borate-Tantalate Compound Glasses

  • Kwon, Oh Hyeok;Yang, Yong Suk;Rim, Young Hoon
    • Journal of the Korean Physical Society
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    • v.73 no.12
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    • pp.1873-1878
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    • 2018
  • We have investigated the ionic conductivity and dielectric relaxation in $Li_2B_4O_7$ (LBO) and $Li_2O-B_2O_3-Ta_2O_5$ (LBTO) glasses. The sample was synthesized by using the melt quenching method. The frequency dependence of the electrical data from the LBO and LBTO glasses has been analyzed in the frameworks of the impedance Cole-Cole formalism and the universal power-law representation driven by the modified fractional Rayleigh equation. The potential barriers in the LBO and the LBTO glasses turn out to be the same. Comparing with the dc and ac activation energies of the LBO glass, these energies of the LBTO glass decrease due to the increasing Coulomb interaction of inter-cationic interaction.

Low Temperature Sintering and Dielectric Properties of $Sr_2$($Ta_{1-x}$$Nb_{x}$)$_2$$O_{7}$ Ceramics ($Sr_2$($Ta_{1-x}$$Nb_{x}$)$_2$$O_{7}$ 세라믹스의 저온소성과 유전특성)

  • 남효덕
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.11a
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    • pp.8-12
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    • 1994
  • Solid solutions $Sr_2$($Ta_{1-x}$$Nb_{x}$)$_2$$O_{7}$ (x = 0.0 - 1.0) composed of strontium-tantalate (low Curie temperature) and strontium-niobate (high Curie temperature) were prepared by the conventional mixed oxide method and the molten salt synthesis method (flux method). Phase relation, sintering temperature, grain-orientation and dielectric properties were investigated for sintered ceramic samples with different compositions. Both Curie temperature and dielectric constant at Curie temperature were increased, and sintering behavior and the degree of grain-orientation were improved with the increase of Nb content. Single phase $Sr_2$$Nb_2$$O_{7}$ powder was synthesized by using flux method at lower temperatures, and sintering temperature was also reduced by using flux method derived powder than using mixed-oxide derived powder. Sintering characteristics and dielectric properties of specimens prepared by flux method were better than those derived through the conventional method.

Low temperature sintering and dielectric properties of $Sr_2(Ta_{1-x}Nb_x)_2O_7$ ceramics by the flux method (용융염합성법에 의한 $Sr_2(Ta_{1-x}Nb_x)_2O_7$ 세라믹스의 저온소성과 유전특성)

  • 남효덕
    • Electrical & Electronic Materials
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    • v.8 no.2
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    • pp.158-164
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    • 1995
  • Solid solutions Sr$_{2}$(Ta$_{1-x}$ Nb$_{x}$)$_{2}$O$_{7}$, (x=0.0-1.0), composed of strontium tantalate(Tc=-107.deg. C) and strontium-niobate(Tc=1342.deg. C) were prepared by the conventional mixed oxide method and the flux method(molten salt synthesis method). Phase relation, sintering temperature, grain-orientation and dielectric properties for sintered ceramic samples were investigated with different compositions. Both Curie temperature and dielectric constant at Curie temperature were increased, and sintering behavior and the degree of grain-orientation were improved with the increase of Nb content. The single phase Sr$_{2}$(Ta/sib 1-x/Nb$_{x}$)$_{2}$O$_{7}$ powder was synthesized by using the flux method at lower temperatures, and sintering temperature was also reduced by using the flux method-derived powder than using the mixed oxide-derived powder. Sintering characteristics and dielectric properties of the specimens prepared by the flux method were better than those derived through the conventional mixed oxide method.thod.hod.

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