• Proceedings of the KIPE Conference
• /
• 2001.10a
• /
• pp.529-533
• /
• 2001

• Proceedings of the KIPE Conference
• /
• 2014.07a
• /
• pp.93-94
• /
• 2014

Recently, According to increase of power demand, it was increased a demand that switching power supply have characteristic of low-loss and high-efficiency. So increase of using device, the failure rate increases and service life problem arises. Even though normal circuit protection is applied in designing stage, it is often hard to identify the cause of malfunction in certain cases such as fatigued power supply due to over-running, malfunctions of main elements or over heating. This report will cover experimental results with the prototype we made, that monitors the efficiency of switching power supply and that protects a circuit when it drops below the standard value.

• Proceedings of the KIEE Conference
• /
• 2002.07b
• /
• pp.1094-1096
• /
• 2002

A new technique for improving the efficiency of single-phase high-frequency boost converter is proposed. This converter includes an additional low-frequency boost converter which is connected to the main high-frequency switching device in parallel. The additional converter is controlled at lower frequency. Most of the current flows in the low-frequency switch and so, high-frequency switching loss is greatly reduced accordingly. Both switching device are controlled by a simple method; each controller consists of a comparator, a frequency generator and an error amplifier. The converter works cooperatively in high efficiency and acts as if it were a conventional high-frequency boost converter with one switching device, The proposed method is verified by simulation and experiment. This paper describes the converter configuration and design, and discusses the steady-state performance concerning the switching loss reduction and efficiency improvement.

• Journal of Power Electronics
• /
• v.18 no.4
• /
• pp.965-974
• /
• 2018

A new zero-voltage-switching (ZVS) push-pull pulse-width modulation (PWM) converter is proposed in this paper. The wide ZVS condition for all of the switches is obtained by utilizing the energy stored in the output inductor and magnetizing inductance. As a result, the switching losses can be dramatically reduced. A simple auxiliary circuit including two small diodes and one capacitor is added at the secondary side of a high frequency (HF) transformer to reset the primary current during the circulating stage and to clamp the voltage spike across the rectifier diodes, which enables the use of low-voltage and low-cost diodes to reduce the conducting and reverse recovery losses. In addition, there are no active devices or resistors in the auxiliary circuit, which can be realized easily. A detailed steady operation analysis, characteristics, design considerations, experimental results and a loss breakdown are presented for the proposed converter. A 500 W prototype has been constructed to verify the effectiveness of the proposed concept.

• Proceedings of the KIPE Conference
• /
• 2001.07a
• /
• pp.520-524
• /
• 2001

Recently, the demand of large capacity SMPS for industrial area is increasing. Full-bridge dc-dc converter with IGBT is most widely used for large capacity SMPS because IGBT has a low-conduction loss and large current capacity, But most large capacity Full-bridge do-dc converter using IGBT has low operating frequency because of switching loss at IGBT especially at turn-off by current tail and it's cause of relatively big converter size. MOSFET has low switching losses has been widely used for high frequency SMPS but it has a problem to apply to large capacity SMPS because it has large conduction resistance causing large on-time losses. In this paper, for reduction losses at switching device, MOSFET is applied at parallel with IGBT in full-bridge dc/dc converter.

• Journal of Power Electronics
• /
• v.18 no.2
• /
• pp.364-374
• /
• 2018

A novel passive lossless soft-switching single inductor dual buck full-bridge inverter (PLSSIDBFBI) is presented in this paper. To accomplish this, a passive lossless snubber circuit is added to a dual buck full-bridge inverter. Therefore, the advantages of the dual buck full-bridge inverter are included in the proposed inverter, and the inverter has just one filter inductor, which can decrease the system volume and improve the integration. In addition, the passive lossless snubber circuit achieves soft-switching by its own resonance, and all of the energy stored in the passive lossless snubber circuit can be transferred to load. A comparison between eight topologies is performed in this paper, and the analysis shows that the proposed soft-switching inverter topology has high reliability and efficiency. Finally, experimental results obtained with a 1 kW prototype verify the theoretical analysis and demonstrate the prominent characteristics of a reduced switching loss and improved efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.37-38
• /
• 2009

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. It is known that in SiC power MOSFET, the JFET region width is one of the most important parameters. In this paper, we demonstrated that the switching performance of DMOSFET is dependent on the with width of the JFET region by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the n JFET region, CSL, and n-drift layer. It has been found that the JFET region reduces specific on-resistance and therefore the switching characteristics depend on the JFET region.

• Proceedings of the KIPE Conference
• /
• 2001.10a
• /
• pp.217-221
• /
• 2001

This paper presents a new prototype of soft-switching DC-DC power converter with a high frequency transformer link which has two active power controlled switches in full bridge rectifier with capacitor input type smoothing filter. In this DC-DC converter, ZVS of the inverter in transformer primary side and ZCS of active rectifier area in secondary side can be completely achieved by taking advantage of parasitic inductor component of high-frequency transformer and loss less snubbing capacitors. Its operation principle and salient features are described. The steady-state operating characteristics of the proposed DC-DC power converter are illustrated and discussed on the basis of the simulation results in addition to the experimental ones obtained by 2kw-40kHz power converter breadboard set up.

• Proceedings of the KIPE Conference
• /
• 2014.07a
• /
• pp.413-414
• /
• 2014

This paper proposed an optimized design of a dual active bridge converter for a low-voltage charger. The dual active bridge converter among various bi-directional DC/DC converters is a high-efficiency isolated bi-directional converter. In the general design, when the battery voltage is high, the ZVS region is reduced. In contrast, when the battery voltage is low, the efficiency is low due to high conduction loss. In order to increase the ZVS region and the power conversion efficiency, depending on the battery voltage, variable switching frequency method is applied. At the same duty, the same power is obtained regardless of the battery voltage using the variable switching frequency method. The proposed method was applied to a 5kW prototype converter, and the experimental results were analyzed and verified.

• Journal of Power Electronics
• /
• v.18 no.6
• /
• pp.1912-1919
• /
• 2018

The output capacitance of power semiconductor devices is important in determining the switching losses and in the operation of some resonant converter topologies. Thus, it is important to be able to accurately determine the output capacitance of a particular device operating at elevated power levels so that the contribution of the output capacitance discharge to switch-on losses can be determined under these conditions. Power semiconductor switch manufacturers usually measure device output capacitance using small-signal methods that may be insufficient for power switching applications. This paper shows how first principle methods are applied in a novel way to obtain more relevant large signal output capacitances of Gallium-Nitride (GaN) FETs using the drain-source voltage transient during device switch-off numerically. A non-linear capacitance for an increase in voltage is determined with good correlation. Simulations are verified using experimental results from two different devices. It is shown that the large signal output capacitance as a function of the drain-source voltage is higher than the small signal values published in the data sheets for each of the devices. It can also be seen that the loss contribution of the output capacitance discharging in the channel during switch-on correlates well with other methods proposed in the literature, which confirms that the proposed method has merit.