• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.368-370
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• 2002

We present current limiting properties of 1.2kV/70A superconducting fault current limiter based on YBCO thin films. This is consisted of 6 wafers (3 parallel $\times$ 2 serial connection) with 4 inch-diameter YBCO thin film. The quench current Iq of the switching elements vary between 33.9 and 35.6 A. Within the difference of 0.5 A in the sum of quench current Iq in two stacks, the serial connection of the stacks showed the simultaneous quench behavior in applied power of 1.2 kV/70A.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.150-152
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• 2004

An integrated inductor using the low temperature cofiring ceramics(LTCC) technology was fabricated. The inductor has Ag circular spiral coil with 16 turns (2-turn x 8-layer) and has a dimension of 11.52mm diameter and 0.71mm thick. For the fabricated inductor, calculation method of inductance was given and it is confirmed that the calculated value is very close to the measured one. Finally as an application of the LTCC integrated inductor to low power electronic circuits, a LTCC buck DC/DC converter with 1.32W output power and 1MHz switching frequency using the inductor fabricated was developed. For the converter the maximum efficiency of about 81% was obtained.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.57-57
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• 2010

In this study, nano-sized phase change materials were evaluated using nanoimprint lithography and c-AFM technique. The 200nm in diameter phase change nano-pillar device of GeSbTe, AgInSbTe, InSe, GeTe, GeSb were successfully fabricated using nanoimprint lithography. And the electrical properties of the phase change nano-pillar device were evaluated using c-AFM with pulse generator and voltage source.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.129-132
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• 2004

An integrated inductor using low temperature cofiring ceramics(LTCC) technology has been fabricated. The inductor has Ag circular spiral coil with 16 turns (2-turn $\times$ 8-layer) and has a dimension of 11.52mm diameter and 0.71mm thick, For the fabricated inductor, calculation method of inductance was given and it is confirmed that the calculated value is very close to the measured value. Finally as an application of the LTCC integrated inductor to low power electronic circuits, a LTCC buck DC/DC converter with 1W output power and 1MHz switching frequency using the inductor has been developed. For the converter the maximum efficiency of about 81% was obtained.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권11호
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• pp.680-686
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• 2004

An integrated inductor using the low temperature cofiring ceramics(LTCC) technology was fabricated. The inductor has Ag circular spiral coil with 16 turns (2-turn x 8-layer) and has a dimension of 11.52mm diameter and 0.71mm thick. For the fabricated inductor, calculation method of inductance was given and it is confirmed that the calculated value is very close to the measured one. Finally as an application of the LTCC integrated inductor to low power electronic circuits, a LTCC buck DC/DC converter with 1.32W output power and 1MHz switching frequency using the inductor fabricated was developed. For the converter the maximum efficiency of about 81% was obtained.

• 대한기계학회논문집B
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• 제22권6호
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• pp.734-749
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• 1998

A numerical study t predict the characteristics on transient operation of the heat pipe cooling system with multiple heaters for electronic system has been performed. The heat pipe cooling system of 45 cm length and 16 mm diameter was composed of evaporator section with four heaters which simulate electronic components, insulated transport section, and condenser section with a conductor which was cooled under the constant heat flux boundary condition. Two test cases were investigated in present study; Case 1 indicated that the 1st and 2nd heaters among four heaters were heated off, while the 3rd and the 4th heaters were heated on. Case 2 was the inverse situation switched from heating locations of Case 1. Case 3 indicated that the 1st and 4th heaters among four heaters were heated off, while the 2nd and 3rd heaters were heated on. The results showed that the transient time to reach the steady state is shorter for Case 1 than for Case 2. Especially, the maximum temperature among the heaters which simulate electronic components during switching operation is relatively small compared to the maximum allowable operating temperature in electronic system. It is concluded that the heat pipe cooling system in present study operate with the good thermal reliability even for sudden switching situation of the heaters.

• 대한기계학회논문집
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• 제16권6호
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• pp.1156-1162
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• 1992

본 연구에서는 종횡비가 다른 3가지의 날카로운 모서리를 가진 타원 슬롯노즐 (AR=1,2,4)을 풍동 수축부 끝에 장착하여 타원제트의 유동특성 및 축교차현상을 3-D LDV 시스템을 이용하여 조사하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• Korean Journal of Radiology
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• 제23권2호
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• pp.189-201
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• 2022

Objective: To compare the outcomes of radiofrequency ablation (RFA) using dual switching monopolar (DSM), switching bipolar (SB), and combined DSM + SB modes at two different interelectrode distances (25 and 20 mm) in an ex vivo study, which simulated ablation of a 2.5-cm virtual hepatic tumor. Materials and Methods: A total of 132 ablation zones were created (22 ablation zones for each protocol) using three separable clustered electrodes. The performances of the DSM, SB, and combined DSM + SB ablation modes were compared by evaluating the following parameters of the RFA zones at two interelectrode distances: shape (circularity), size (diameter and volume), peritumoral ablative margins, and percentages of the white zone at the midpoint of the two electrodes (ablative margin at midpoint, AMm) and in the electrode path (ablative margin at electrode path, AMe). Results: At both distances, circularity was the highest in the SB mode, followed by the DSM + SB mode, and was the lowest in the DSM mode. The circularity of the ablation zone showed a significant difference among the three energy groups (p < 0.001 and p = 0.002 for 25-mm and 20-mm, respectively). All size measurements, AMm, and AMe were the greatest in the DSM mode, followed by the DSM + SB mode, and the lowest were with the SB mode (all statistically significant). The white zone proportion in AMm and AMe were the greatest in the SB mode, followed by the DSM + SB mode and DSM in general. Conclusion: DSM and SB appear to be complementary in creating an ideal ablation zone. RFA with the SB mode can efficiently eradicate tumors and create a circular ablation zone, while DSM is required to create a sufficient ablative margin and a large ablation zone.

• 한국통신학회논문지
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• 제18권11호
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• pp.1689-1700
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• 1993

WDM(Wavelength Division Multiplexing) 방식은 이정 수의 파장들을 사용하여 광의 풍부란 대역폭을 이용할 수 있는 새로운 전송기법이다. 본 논문에서는 대용향 WDM 다중 홉 스위치를 위한 개선된 가상 위상인 "(a, $\beta$,${\gamma}$) ShuffleNet"을 제시하였다. 제안된 위상은 a개의 ($\beta$,${\gamma}$)ShuffleNet을 $\beta$${\gamma}$개의 "bridge 노드"를 이용하여 자체루팅에 의한 N-by-N(N=(x*$\beta$${\gamma}$*${\gamma}$) 스위칭을 수행할 수 있도록 연결한 구조이다. 제안된 구조가 갖는 위상적 병렬성으로 인해 기준의 규칙적 위상의 구조들와 달리 스위치의 용량이 증가하더라도 조으간의 diameter를 2${\gamma}$로 일정하게 유지할 수 있어 높은 이용율과 성능을 제공한다. 이러한 용양증가에 따른 scalability 특성은 growable 광대역 스위칭의 구성을 가능하게 한다. 지연 분석에서도 위상적 특징으로 인해 각각의 ($\beta$,${\gamma}$)ShuffleNet내에서의 트래픽 국부성(locality)에 의해 매우 낮은 지연시간을 갖음을 확인하였다. 낮은 지연시간을 갖음을 확인하였다.