• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.5
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• pp.400-409
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• 2001

A new phase-shifted parallel-input/series-output(PISO) dual converter for tush-power step-up applications has been proposed. Since the proposed converter shows a low switch turn-off voltage stress, switching devices with low conduction loss can be employed in order to improve the power conversion efficiency. Moreover, it features a low output capacitor root-mean-square(RMS) current stress, low input current and output voltage ripple contents, and fast control-to-output dynamics compared to its PWM counterpart. In this paper, the operation of the proposed converter is analyzed in detail and its mathematical models and steady-state solutions are presented. A comparative analysis with the conventional PWM PISO dual converter is also provided. To confirm the operation, features, and validity of the Proposed converter, experimental results from an 800W, 24-350Vdc prototype are presented.

• Journal of KIISE:Information Networking
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• v.29 no.4
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• pp.405-411
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• 2002

Open interfaces in the optica] Internet have been progressed by OIF's ISI, ITU-T ASTN's CCI and IETF's GSMP extensions with optical switching. These open interfaces enable the separation between the control plane and the optical transport plane. This separation allows flexibility in the network, but it suffers more setup delay than the traditional switch-by-switch connection setup. We propose the parallel interworking model, which will reduce the connection setup delay in the open interface of optical Internet. Based on the switch controller's caching capability about networks states, the parallel interworking procedures between signaling protocol and GSMP protocol are performed in the switch controller. We simulated and evaluated our proposed parallel interworking model and the existing sequential interworking model in terms of a connection setup delay and a completion ratio. We observed that the completion ratios of the two interworking models were quite close. However the connection setup delay of parallel interworking model is improved by about 30% compared with that of the sequential interworking model.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.1
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• pp.91-97
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• 2014

Recently, the LED(Light Emitting Diode) is expected to replace conventional lamps including incandescent, halogen and fluorescent lamps for some general illumination application, due to some obvious features such as high luminous efficiency, safety, long life, environment-friendly characteristics and so on. To drive the LED, a single stage PFC(Power Factor Correction) flyback converter has been adopted to satisfy the isolation, PFC and low cost. The conventional flyback LED driver has the serious disadvantage of high 120Hz output current ripple caused by the PFC operation. To overcome this drawback, a new PFC flyback with low 120Hz output current ripple is proposed in this paper. It is composed of 2 power stages, the DCM(Discontinuous Conduction Mode) flyback converter for PFC and BCM(Boundary Conduction Mode) boost converter for tightly regulated LED current. Since the link capacitor is located in the secondary side, its voltage stress is small. Moreover, since the driver is composed of 2 power stages, small output filter and link capacitor can be used. Especially, since the flyback is operated at DCM, the PFC can be automatically obtained and thus, an additional PFC IC is not necessary. Therefore, only one control IC for BCM boost converter is required. To confirm the validity of the proposed converter, theoretical analysis and experimental results from a prototype of 24W LED driver are presented.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.11
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• pp.1543-1550
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• 2015

Ferroresonance is a non-linear vibrational phenomenon that is generated by the electrical interaction of the inductance component with the capacitor component of a certain capacitance as the device of the inductance component such as a transformer is saturated due to the degradation, the waveform distortion of current and voltage, and the oscillation of overcurrent and overvoltage in a system. Recently, ferroresonance was generated from the waveform distortion of current and voltage, or the overvoltage or undervoltage phenomenon caused by the nature of an electrical power system and design technology of the transformer in the three phase transformer system. Hence, in general, ferroresonance analyzed by converting to the LC equivalent circuit. However, in general, the aforementioned analytical method only applies to the resonance phenomenon that is generated by the interaction of the capacitance of bussbar and grounding, and switching as the capacitor component with PT and the transformer as the inductance component in a system. Subsequently, the condition where ferroresonance was generated since overvoltage was supplied as line voltage to the phase voltage and thus the iron core is saturated due to the interconnection between grounded and ungrounded systems could not be analyzed when single phase PT was connected in a ${\Delta}$/Y connection system. In this study, voltage swell in the configuration of grounded circuit of a step-up transformer with the ${\Delta}-{\Delta}$ connection linked to PT for control power and the ferroresonance generated by overvoltage when the line voltage of the ${\Delta}-{\Delta}$ connection was connected to the phase voltage of the grounded Y-Y connection were analyzed using PSCAD / EMTDC through the failure case of the transformer caused by ferroresonance in the system with the ${\Delta}-{\Delta}$/Y-Y connection, and subsequently, the preventive measure of ferroresonance was proposed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.31-32
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• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.77.1-77.1
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• 2013

Atomic layer deposition (ALD) is known for its self-limiting reaction, which offers atomic-level controllability of the growth of thin films for a wide range of applications. The self-limiting mechanism leads to very useful properties, such as excellent uniformity over a large area and superior conformality on complex structures. These unique features of ALD provide promising opportunities for future electronics. Although the ALD of Al2O3 film (using trimethyl-aluminum and water as a metal precursor and oxygen source, respectively) can be regarded as a representative example of an ideal ALD based on the completely self-limiting reaction, there are many cases deviating from the ideal ALD reaction in recently developed ALD processes. The nonconventional aspects of the ALD reactions may strongly influence the various properties of the functional materials grown by ALD, and the lack of comprehension of these aspects has made ALD difficult to control. In this respect, several dominant factors that complicate ALD reactions, including the types of metal precursors, non-metal precursors (oxygen sources or reducing agents), and substrates, will be discussed in this presentation. Several functional materials for future electronics, such as higher-k dielectrics (TiO2, SrTiO3) for DRAM application, and resistive switching materials (NiO) for RRAM application, will be addressed in this talk. Unwanted supply of oxygen atoms from the substrate or other component oxide to the incoming precursors during the precursor pulse step, and outward diffusion of substrate atoms to the growing film surface even during the steady-state growth influenced the growth, crystal structure, and properties of the various films.

• Proceedings of the Korean Information Science Society Conference
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• 2004.04b
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• pp.541-543
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• 2004

능동적 학습(active learning)은 제한된 시간과 인력으로 가능한 정확도가 높은 분류기(classifier)를 생성하기 위하여, 훈련집합에 추가할 예제 즉 문의예제(query example)의 선정과 확장된 훈련집합으로 다시 학습하는 과정을 반복하여 수행한다. 능동적 학습의 핵심은 사용자에게 카테고리(category) 부여를 요청할 문의예제를 선정하는 과정에 있다. 효과적인 문의예제를 선정하기 위하여 다양한 방안들이 제안되었으나, 이들은 매 문의단계마다 하나의 문의예제를 선정하는 경우에 가장 적합하도록 고안되었다. 능동적 학습이 복수의 예제를 사용자에게 문의할 수 있다면, 사용자는 문의예제들을 서로 비교해 가면서 작업할 수 있으므로 카테고리 부여작업을 보다 빠르고 정확하게 수행할 수 있을 것이다. 또한 충분한 인력을 보유한 상황에서는, 카테고리 부여작업을 병렬로 처리할 수 있어 전반적인 학습시간의 단축에 큰 도움이 될 것이다. 하지만, 각 예제의 문의예제로써의 적합 정도를 추정하면 유사한 예제들은 서로 비슷한 수준으로 평가되므로, 기존의 방안들을 복수의 문의예제 선정작업에 그대로 적용할 경우, 유사한 예제들이 문의예제로 동시에 선정되어 능동적 학습의 효율이 저하되는 현상이 나타날 수 있다. 본 논문에서는 특정 예제를 문의예제로 선정하면 이와 일정 수준이상 유사한 예제들은 해당 예제와 함께 문의예제로 선정하지 않음으로써, 이러한 문제점을 극복할 수 있는 방안을 제안한다. 제안한 방안을 문서분류 문제에 적용해 본 결과 기존 문의예제 선정방안으로 복수 문의예제를 선정할 때 발생할 수 있는 문제점을 상당히 완화시킬 있을 뿐 아니라, 복수의 문의예제를 선정하더라도 각 문의 단계마다 하나의 예제를 선정하는 경우에 비해 큰 성능의 저하가 없음을 실험적으로 확인하였다./$m\ell$로 나타났다.TEX>${HCO_3}^-$ 이온의 탈착은 서서히 진행되었다. R＆D investment increases are directly not liked to R＆D productivities because of delays and side effects during transition periods between different stages of technology development. Thus, It is necessary to develope strategies in order to enhance efficiency of technological development process by perceiving the switching pattern. 기여할 수 있을 것으로 기대된다. 것이다.'ity, and warm water discharges from a power plant, etc.h to the way to dispose heavy water adsorbent. Through this we could reduce solid waste products and the expense of permanent disposal of radioactive waste products and also we could contribute nuclear power plant run safely. According to the result we could keep the best condition of radiation safety super vision and we could help people believe in safety with Radioactivity wastes control for harmony with Environ

• Journal of the Korean Institute of Intelligent Systems
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• v.16 no.5
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• pp.537-543
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• 2006

There have been many recent studies on the nonlinear rainfall-runoff modeling, where the use of neural networks is shown to be quite successful. Due to fundamental limitation of linear structures, employing linear models has often been considered inferior to the neural network approaches in this area. However, we believe that with an appropriate extension, the concept of linear impulse responses can be a viable tool since it enables us to understand underlying dynamics principles better. In this paper, we propose the use of multiple impulse responses for the problem of rainfall-runoff analysis. The proposed method is based on a simple and fixed strategy for switching among multiple linear impulse-response models, each of which satisfies the constraints of non-negativity and uni-modality. The computational analysis performed for a certain Korean hydrometeorologic data set showed that the proposed method can yield very meaningful results.

• Nuclear Engineering and Technology
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• v.53 no.10
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• pp.3327-3334
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• 2021

Present electric grids are advanced to integrate smart grids, distributed resources, high-speed sensing and control, and other advanced metering technologies. Cybersecurity is one of the challenges of the smart grid and nuclear plant digital system. It affects the advanced metering infrastructure (AMI), for grid data communication and controls the information in real-time. The research article is emphasized solving the nuclear and smart grid hardware security issues with the integration of field programmable gate array (FPGA), and implementing the latest Time Authenticated Cryptographic Identity Transmission (TACIT) cryptographic algorithm in the chip. The cryptographic-based encryption and decryption approach can be used for a smart grid distribution system embedding with FPGA hardware. The chip design is carried in Xilinx ISE 14.7 and synthesized on Virtex-5 FPGA hardware. The state of the art of work is that the algorithm is implemented on FPGA hardware that provides the scalable design with different key sizes, and its integration enhances the grid hardware security and switching. It has been reported by similar state-of-the-art approaches, that the algorithm was limited in software, not implemented in a hardware chip. The main finding of the research work is that the design predicts the utilization of hardware parameters such as slices, LUTs, flip-flops, memory, input/output blocks, and timing information for Virtex-5 FPGA synthesis before the chip fabrication. The information is extracted for 8-bit to 128-bit key and grid data with initial parameters. TACIT security chip supports 400 MHz frequency for 128-bit key. The research work is an effort to provide the solution for the industries working towards embedded hardware security for the smart grid, power plants, and nuclear applications.