• 전력전자학회논문지
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• 제6권5호
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• pp.400-409
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• 2001

대용량 승압형 응용을 위한 새로운 위상천이 병렬입력/직렬출력 듀얼 컨버터가 제안된 바 있다. 제안된 컨버터는 종래의 펄스 폭 변조(PWM) 방식의 병렬입력/직렬출력 듀얼 컨버터에 비해 낮은 스위치 전압 스트레스를 보여 저 손실의 소자를 사용할 수 있으므로 높은 효율을 보인다. 또한, 출력 캐패시터의 실효(RMS) 전류 스트레스가 낮고 입력 전류와 출력 전압의 맥동이 작으며, 제어 입력에 대한 출력 전압의 동역학(dynamics)이 빠른 장점이 있다. 본 논문에서는 제안된 컨버터의 정상상태 동작을 심도 있게 분석하고 그 수학적 모델 및 정상상태 해를 제시하며, 제안된 컨버터의 특징을 종래의 PWM 방식의 컨버터와의 비교를 통해 정량적으로 분석한다. 또한, 제안된 회로의 동작, 특성 및 유효성을 검증하기 위해 800W급 24-350Vdc 사양의 시작품으로부터의 실험 결과를 제시한다.

• 한국정보과학회논문지:정보통신
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• 제29권4호
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• pp.405-411
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• 2002

광 인터넷에서 광 전달망과 제어평면의 분리를 실현하는 개방형 인터페이스에 대한 연구는 OIF의 ISI, ITU-T ASON의 CCI 그리고 IETF의 광 스위칭을 위한 GSMP 확장 등이 있다. 이러한 개방형 인터페이스 기술들은 망에서의 다양한 융통성을 제공하는 반면에 전통적인 스위치-대-스위치 연결 설정에 비하여 지연이 길다. 본 논문에서는 광 인터넷의 개방형 인터페이스에서 연결 설정 지연을 줄이기 위하여 병렬형 연동 모델을 채택 한다. 병렬형 연동 모델에서는 네트워크 상태에 대한 스위치 제어기의 캐쉴 능력을 기반으로 연결 설정을 위한 신호 프로토콜과 GSMP 프로토콜 사이의 연동 절차를 병렬로 수행한다. 시뮬레이션을 통하여 본 논문에서 채택한 병렬형 연동 모델과 기존의 순차형 연동 모델에 대한 연결 설정 지연과 완료율을 비교 분석하였다. 시뮬레이션 결과 두 모델이 완료율 면에서는 거의 일치하며, 연결 설정 지연 면에서는 병렬형 모델이 순차형 모델에 비하여 평균 30% 향상됨을 알 수 있었다.

• 전력전자학회논문지
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• 제19권1호
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• pp.91-97
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• 2014

Recently, the LED(Light Emitting Diode) is expected to replace conventional lamps including incandescent, halogen and fluorescent lamps for some general illumination application, due to some obvious features such as high luminous efficiency, safety, long life, environment-friendly characteristics and so on. To drive the LED, a single stage PFC(Power Factor Correction) flyback converter has been adopted to satisfy the isolation, PFC and low cost. The conventional flyback LED driver has the serious disadvantage of high 120Hz output current ripple caused by the PFC operation. To overcome this drawback, a new PFC flyback with low 120Hz output current ripple is proposed in this paper. It is composed of 2 power stages, the DCM(Discontinuous Conduction Mode) flyback converter for PFC and BCM(Boundary Conduction Mode) boost converter for tightly regulated LED current. Since the link capacitor is located in the secondary side, its voltage stress is small. Moreover, since the driver is composed of 2 power stages, small output filter and link capacitor can be used. Especially, since the flyback is operated at DCM, the PFC can be automatically obtained and thus, an additional PFC IC is not necessary. Therefore, only one control IC for BCM boost converter is required. To confirm the validity of the proposed converter, theoretical analysis and experimental results from a prototype of 24W LED driver are presented.

• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.

• 전기학회논문지
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• 제64권11호
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• pp.1543-1550
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• 2015

Ferroresonance is a non-linear vibrational phenomenon that is generated by the electrical interaction of the inductance component with the capacitor component of a certain capacitance as the device of the inductance component such as a transformer is saturated due to the degradation, the waveform distortion of current and voltage, and the oscillation of overcurrent and overvoltage in a system. Recently, ferroresonance was generated from the waveform distortion of current and voltage, or the overvoltage or undervoltage phenomenon caused by the nature of an electrical power system and design technology of the transformer in the three phase transformer system. Hence, in general, ferroresonance analyzed by converting to the LC equivalent circuit. However, in general, the aforementioned analytical method only applies to the resonance phenomenon that is generated by the interaction of the capacitance of bussbar and grounding, and switching as the capacitor component with PT and the transformer as the inductance component in a system. Subsequently, the condition where ferroresonance was generated since overvoltage was supplied as line voltage to the phase voltage and thus the iron core is saturated due to the interconnection between grounded and ungrounded systems could not be analyzed when single phase PT was connected in a ${\Delta}$/Y connection system. In this study, voltage swell in the configuration of grounded circuit of a step-up transformer with the ${\Delta}-{\Delta}$ connection linked to PT for control power and the ferroresonance generated by overvoltage when the line voltage of the ${\Delta}-{\Delta}$ connection was connected to the phase voltage of the grounded Y-Y connection were analyzed using PSCAD / EMTDC through the failure case of the transformer caused by ferroresonance in the system with the ${\Delta}-{\Delta}$/Y-Y connection, and subsequently, the preventive measure of ferroresonance was proposed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.31-32
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• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.77.1-77.1
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• 2013

Atomic layer deposition (ALD) is known for its self-limiting reaction, which offers atomic-level controllability of the growth of thin films for a wide range of applications. The self-limiting mechanism leads to very useful properties, such as excellent uniformity over a large area and superior conformality on complex structures. These unique features of ALD provide promising opportunities for future electronics. Although the ALD of Al2O3 film (using trimethyl-aluminum and water as a metal precursor and oxygen source, respectively) can be regarded as a representative example of an ideal ALD based on the completely self-limiting reaction, there are many cases deviating from the ideal ALD reaction in recently developed ALD processes. The nonconventional aspects of the ALD reactions may strongly influence the various properties of the functional materials grown by ALD, and the lack of comprehension of these aspects has made ALD difficult to control. In this respect, several dominant factors that complicate ALD reactions, including the types of metal precursors, non-metal precursors (oxygen sources or reducing agents), and substrates, will be discussed in this presentation. Several functional materials for future electronics, such as higher-k dielectrics (TiO2, SrTiO3) for DRAM application, and resistive switching materials (NiO) for RRAM application, will be addressed in this talk. Unwanted supply of oxygen atoms from the substrate or other component oxide to the incoming precursors during the precursor pulse step, and outward diffusion of substrate atoms to the growing film surface even during the steady-state growth influenced the growth, crystal structure, and properties of the various films.

• 한국정보과학회:학술대회논문집
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• 한국정보과학회 2004년도 봄 학술발표논문집 Vol.31 No.1 (B)
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• pp.541-543
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• 2004

능동적 학습(active learning)은 제한된 시간과 인력으로 가능한 정확도가 높은 분류기(classifier)를 생성하기 위하여, 훈련집합에 추가할 예제 즉 문의예제(query example)의 선정과 확장된 훈련집합으로 다시 학습하는 과정을 반복하여 수행한다. 능동적 학습의 핵심은 사용자에게 카테고리(category) 부여를 요청할 문의예제를 선정하는 과정에 있다. 효과적인 문의예제를 선정하기 위하여 다양한 방안들이 제안되었으나, 이들은 매 문의단계마다 하나의 문의예제를 선정하는 경우에 가장 적합하도록 고안되었다. 능동적 학습이 복수의 예제를 사용자에게 문의할 수 있다면, 사용자는 문의예제들을 서로 비교해 가면서 작업할 수 있으므로 카테고리 부여작업을 보다 빠르고 정확하게 수행할 수 있을 것이다. 또한 충분한 인력을 보유한 상황에서는, 카테고리 부여작업을 병렬로 처리할 수 있어 전반적인 학습시간의 단축에 큰 도움이 될 것이다. 하지만, 각 예제의 문의예제로써의 적합 정도를 추정하면 유사한 예제들은 서로 비슷한 수준으로 평가되므로, 기존의 방안들을 복수의 문의예제 선정작업에 그대로 적용할 경우, 유사한 예제들이 문의예제로 동시에 선정되어 능동적 학습의 효율이 저하되는 현상이 나타날 수 있다. 본 논문에서는 특정 예제를 문의예제로 선정하면 이와 일정 수준이상 유사한 예제들은 해당 예제와 함께 문의예제로 선정하지 않음으로써, 이러한 문제점을 극복할 수 있는 방안을 제안한다. 제안한 방안을 문서분류 문제에 적용해 본 결과 기존 문의예제 선정방안으로 복수 문의예제를 선정할 때 발생할 수 있는 문제점을 상당히 완화시킬 있을 뿐 아니라, 복수의 문의예제를 선정하더라도 각 문의 단계마다 하나의 예제를 선정하는 경우에 비해 큰 성능의 저하가 없음을 실험적으로 확인하였다./$m\ell$로 나타났다.TEX>${HCO_3}^-$ 이온의 탈착은 서서히 진행되었다. R＆D investment increases are directly not liked to R＆D productivities because of delays and side effects during transition periods between different stages of technology development. Thus, It is necessary to develope strategies in order to enhance efficiency of technological development process by perceiving the switching pattern. 기여할 수 있을 것으로 기대된다. 것이다.'ity, and warm water discharges from a power plant, etc.h to the way to dispose heavy water adsorbent. Through this we could reduce solid waste products and the expense of permanent disposal of radioactive waste products and also we could contribute nuclear power plant run safely. According to the result we could keep the best condition of radiation safety super vision and we could help people believe in safety with Radioactivity wastes control for harmony with Environ

• 한국지능시스템학회논문지
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• 제16권5호
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• pp.537-543
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• 2006

최근들어 강우-유출 현상에 관한 비선형 모델링에 관하여 많은 연구가 있어 왔는데, 그 중에서도 신경망을 이용한 결과는 매우 성공적인 것으로 보고되어 왔다. 선형 구조가 갖는 근본적인 한계성으로 인하여, 이 분야에 선형 모델을 활용하는 것은 신경망을 사용하는 경우에 비하여 불리할 것으로 여겨지곤 한다. 하지만 우리는, 선형 모델의 경우 주어진 문제가 갖는 근본적 동특성의 원리를 보다 잘 이해할 수 있도록 해주므로, 적절한 확장 과정을 거치면 선형 임펄스 응답의 개념은 매우 경쟁력 있는 도구가 될 수 있을 것으로 생각한다. 이러한 생각에 따라, 본 논문에서 우리는 복수의 임펄스 응답의 이용을 강우-유출 해석의 문제에 적용하는 방안을 제안한다. 제안된 방법은 복수의 임펄스 응답 모델 사이에 적용되는 단순하고 고정된 스위칭 전략에 기반을 두고 있으며, 각 임펄스 응답은 음이 아닌 성분을 갖도록 하고, 동시에 한개의 봉우리만 갖는 형태를 만족하도록 한다. 우리나라의 특정한 지역의 수문기상학 자료를 대상으로 하여 적용해 본 결과, 제안된 방법은 매우 의미 있는 결과를 제공함을 보여주었다.

• Nuclear Engineering and Technology
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• 제53권10호
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• pp.3327-3334
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• 2021

Present electric grids are advanced to integrate smart grids, distributed resources, high-speed sensing and control, and other advanced metering technologies. Cybersecurity is one of the challenges of the smart grid and nuclear plant digital system. It affects the advanced metering infrastructure (AMI), for grid data communication and controls the information in real-time. The research article is emphasized solving the nuclear and smart grid hardware security issues with the integration of field programmable gate array (FPGA), and implementing the latest Time Authenticated Cryptographic Identity Transmission (TACIT) cryptographic algorithm in the chip. The cryptographic-based encryption and decryption approach can be used for a smart grid distribution system embedding with FPGA hardware. The chip design is carried in Xilinx ISE 14.7 and synthesized on Virtex-5 FPGA hardware. The state of the art of work is that the algorithm is implemented on FPGA hardware that provides the scalable design with different key sizes, and its integration enhances the grid hardware security and switching. It has been reported by similar state-of-the-art approaches, that the algorithm was limited in software, not implemented in a hardware chip. The main finding of the research work is that the design predicts the utilization of hardware parameters such as slices, LUTs, flip-flops, memory, input/output blocks, and timing information for Virtex-5 FPGA synthesis before the chip fabrication. The information is extracted for 8-bit to 128-bit key and grid data with initial parameters. TACIT security chip supports 400 MHz frequency for 128-bit key. The research work is an effort to provide the solution for the industries working towards embedded hardware security for the smart grid, power plants, and nuclear applications.