• 한국해양공학회지
• /
• 제1권2호
• /
• pp.101-112
• /
• 1987

Fracture toughness characterization in the transition region is examined for heat-treated and ionnitrided Ni-Cr-Mo steel. After heat treatment for the specimens of Ni-Cr-Mo steel, organizations of specimens-specimens which are heat-treated and ion-nitrided for 4 hours at 500 .deg. C and 5 torr in 25%N/dub 2/-75%H/sub 2/mixed gas-, hardness variety, and X-ray diffraction pattern of the ion-nitriding compound layer are observed. Fracture toughenss test of unloading compliance method were conducted over the regions from room trmperature to -70.deg. C. The compound layer was consisted of r'=Fe/sub 4/N phase and ion-nitrided layer's depth was 200mm from surface. The transition regions of heat-treated and ion-nitrided specimens were about -30.deg. C and -50.deg. C, respectively. The transition region of ion-nitrided specimens is estimated less than that of heat-treated one, and this is the effect of ion-nitriding.

• 한국재료학회지
• /
• 제8권10호
• /
• pp.884-889
• /
• 1998

대면적의 비정질 실리콘 박막을 가우스 분포(Gaussian Profile)의 일차원 선형빔(line shape beam)을 가지는 엑시머 레이저를 사용하여 결정화를 시켰다. (Corning 7059 glass)위에 증착된 비정질 실리콘 박막이 재결정화된 실리콘 박막의 경우, 두께에따라 결정화되는 모양이 다르게 나타났다. 따라서 두께에 따라 결정화되는 상태의 변화를 조사하기 위하여 angle wrapping 방법을 새롭게 도입하여 깊이에 따른 Si층이 5${\mu}m$ 이상되도록 angle wrapping한 후에 박막의 두께에 따른 micro-raman spectra를 측정하여 결정화상태에 따른 잔류응력을 조사하였다. 또한 기판의 온도가 상온인 경우에 엑시머 레이저의 밀도가 300mJ/${cm}^2$에서 열처리한 경우에 재결정화된 Si 박막의 잔류응력에 박막의 표면에서 박막의 깊이에 따라 $1.3{\times}10^10$에서 $1.6{\times}10^10$을 거쳐 $1.9{\times}10^10$ dyne/${cm}^2$으로 phase의 변화에 따라 증가하였다. 또한 기판의 온도가 $400^{\circ}C$에서 최적의 열처리 에너지 밀도인 300mJ/${cm}^2$에서는 박막의 깊이에 따른 결정화 상태의변화에 따라 thermal stress 의 값이 $8.1{\times}10^9$에서 $9.0{\times}10^9$를 거쳐 $9.9{\times}10^9$ dyne/${cm}^2$으로 변화하는 것을 알 수 있다. 따라서 liquid phase에서 solid phaserk 변화함에 따라 stress값이 증가하는 것을 알 수 있다.

• Current Applied Physics
• /
• 제18권12호
• /
• pp.1577-1582
• /
• 2018

While controlling the cation contents in perovskite rare-earth nickelate thin films, a metal-to-insulator phase transition is reported. Systematic control of cation stoichiometry has been achieved by manipulating the irradiation of excimer laser in pulsed laser deposition. Two rare-earth nickelate bilayer thin-film heterostructures with the controlled cation stoichiometry (i.e. stoichiometric and Ni-excessive) have been fabricated. It is found that the Ni-excessive nickelate film is structurally less dense than the stoichiometric film, albeit both of them are epitaxial and coherent with respect to the underlying substrate. More interestingly, as a temperature decreases, a metal-to-insulator transition is only observed in the Ni-excessive nickelate films, which can be associated with the enhanced disproportionation of the Ni charge valence. Based on our theoretical results, possible origins (e.g. anti-site defects) of the low-temperature insulating state are discussed with the need of future work for deeper understanding. Our work can be utilized to realize unusual physical phenomena (e.g. metal-to-insulator phase transitions) in complex oxide films by manipulating the chemical stoichiometry in pulsed laser deposition.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
• /
• pp.121.3-121
• /
• 1998

• 한국결정성장학회지
• /
• 제31권1호
• /
• pp.1-7
• /
• 2021

Ga2O3의 준 안정상인 ε-Ga2O3는 육각형 구조나 준 육각형 구조를 가지는 기판들과 정합성이 우수하여 β-Ga2O3보다 상대적으로 쉽게 낮은 표면 거칠기와 결함 밀도를 갖는 박막을 얻을 수 있다. 이에 ε-Ga2O3를 고온에서 열처리하면 β-Ga2O3로 상전이 되는 특성을 이용하여 표면 거칠기와 결함 밀도가 낮은 고품질 β-Ga2O3 박막의 제조를 시도하였다. 이를 위해서는 고품질 ε-Ga2O3 박막의 성장이 선행되어야 하므로 본 연구에서는 갈륨과 산소의 공급 유량 비율에 따른 Ga2O3 박막의 구조적, 형태적 특성을 분석함으로써 최적의 유량 비율을 조사하였다. 추가로 열처리 조건과 ε-Ga2O3 박막에 혼입된 β-Ga2O3가 상전이 이후 β-Ga2O3의 결정성에 미치는 영향도 함께 조사하였다.

• 대한화학회지
• /
• 제38권2호
• /
• pp.87-91
• /
• 1994

세룰로오스 에스터의 LB막을 제조하여 분석하였다. 탄화수소 사슬 길이에 대한 압력-면적 곡선의 변화를 알아보았으며, 압력-면적 곡선의 온도에 대한 의존성으로부터 상전이 과정을 설명하였다. 수평증착법으로 X-type의 다층막을 만들 수 있었으며 접축각, 두께 및 XPS를 측정하였다.

• 한국표면공학회지
• /
• 제23권2호
• /
• pp.1-10
• /
• 1990

Metal-Organic Vapor Phase Epitaxy (MOVPE) is an epitaxial process utilizaing ane or more of organometallice as reactnte to grow compound semicond semiconductror layers. MOVPE is basically a cold wall process in which reactants are delivered without reacting with each other to the heated substrate where reactants are thermally decomposed to from compound semiconductors through chemical reaction. Since reactants are delivered as gas phase and the formation of the single crystal compunds depends on the thermal decomposition of the reactants, details of MOVPE relies on the hydrodynamics and pyroltsis and chemical reation of reactants inside on reaction chamber. It has been demonstrated that MOVPE is capable of growing virtually all of the III-V, II-VI and IV-VI compound semiconductrs, fabricating ultrathin epilayers, for ming abrupt hetrointerfaces with monolayer transition width, and is suitable for multi-wafer operation yilding a high throghtput. Overiew of reactror componts and layer, characteristics, and status of MOVPE are discussed.

• 한국대기환경학회지
• /
• 제18권4호
• /
• pp.275-284
• /
• 2002

Atmospheric concentrations of organochlorine pesticides (OCPs) in Seoul, South Korea between July 1999 and May 2000 were determined to investigate concentration distribution in air, relationship between concentrations and meteorological conditions, and apportionment of sources e.g. local sources (air- surface exchange) and long range transport. Endosulfan and $\alpha$-HCH were the highest concentrations in atmosphere with values typcally ranging from 10s to l00s of pg/㎥. These high concentrations may be attributed to their usage, period and chemical property (Koa). All OCPs also showed elevated levels during the summer and were positively correlated with temperature. This would suggest that a seasonal enhancement was due to (re)volatilization from secondary sources and application during the warmer months. The temperature dependence of atmospheric concentrations of OCPs were investigated using plots of the natural logarithm of partial pressure (In P) vs reciprocal mean temperatures (1/T), and environmental phase-transition energies were calculated for each of the pesticides. For OCPs, temperature dependence was statistically significant (at the 99.99% confidence level) and temperature accounted for 35~95% of the variability in concentrations. The relatively higher slopes and phase-transition energies for $\alpha$-, ${\gamma}$-chlordane, endosulfan and endosulfan sulfate suggested that volatilization from local sources influenced their concentrations. The relatively lower those for $\alpha$-, ${\gamma}$-HCH, p, p'-DDE and heptachlor epoxide also suggested that volatilization from local sources and long range transport influenced their concentrations.

• Journal of Information Display
• /
• 제3권3호
• /
• pp.17-23
• /
• 2002

In this work we report methods of formation of three-dimensional structures of particles in a liquid crystal host. We found that, under the appropriate conditions, the particles are captured and dragged by the moving isotropic/nematic front during the phase transition process. This movement of the particles can be enhanced significantly or suppressed drastically with the influence of an electric field and/or with changing the conditions of the phase transition, such as the rate of cooling. As a result, a wide variety of particle structures can be obtained ranging from a fine-grained cellular structure to stripes of varying periods to a course-grained "root" structures. Changing the properties of the materials, such as the size and density of the particles and the surface anchoring of the liquid crystal at the particle surface, can also be used to control the morphology of the three-dimensional particle network and adjust the physical properties of the resulting dispersions. These particle structures may be used to affect the performance of LCD's much as polymers have been used in the past.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.424-425
• /
• 2007

We have studied the optically compensated splay mode using reactive mesogen (RM) monomer to reduce setting voltage and phase transition time from initial bend to splay state. When the OCS cell has low pretilt angle close to $45^{\circ}C$, OCS state can be formed easily. The low pretilt angle was formed through the polymerization of UV curable reactive RM monomer at the surfaces. In this way, reorientation of the LC is well defined and thus the device shows better performances in setting voltage and phase transition time.