• Applied Microscopy
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• 제33권1호
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• pp.49-58
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• 2003

EF-TEM 직접가열 실험을 통하여 titanium의 ${\alpha}-{\beta}$상전이를 연구하였다. 통계적 오차를 줄이기 위해 서로 다른 3군데의 titanium foil의 영역을 관찰하였고, 각각의 영역에 대해 단계별로($RT{\rightarrow}600{\rightarrow}900{\rightarrow}RT$) 회절패턴과 이미지를 기록하였다. 이 연구를 통해 얻은 결과는 다음과 같다. (1) Titanium은 $900^{\circ}C$에서 급격히 상전이가 진행된다. 이 온도에서는 ${\alpha}$와 ${\beta}$-상이 같이 존재한다. (2) 상전이가 일어난 ${\beta}$-상의 영역은 쌍정구조를 가진 plate 형태로 나타나며, 그들은 서로 상호 회전 배열되어 있다. (3) 전자회절도형과 EDS 분석 결과, $600^{\circ}C$ 이상의 가열에서는 열적 산화에 의해 Ti의 산화물이 표면에서 생성되기 시작하며 이들은 냉각 시 Ti의 ${\beta}{\rightarrow}{\alpha}$ 가역 상전이를 저해한다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.38-38
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• 1998

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2016년도 자성 및 자성재료 국제학술대회
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• pp.203-203
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• 2016

• 한국진공학회지
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• 제8권3B호
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• pp.269-275
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• 1999

전자회절법을 이용하여 K및 다양한 흡착자에 의한 Si(113)3 $\times$ 2 표면의 상변화를 관찰하였으며 광전자분광법을 이용하여 산소 노출량에 따른 가전자대 및 내각준위스펙트럼을 관찰하였다. 산소 흡착에 의해 가전자대의 표면상태가 내각준위에서 관찰되는 두 피크(S1, S2)와 동시에 사라지면서 3$\times$1 주기성을 보였다. 특히 이러한 변화가 동종물질인 실리콘 증착에서도 관찰되었으며 후열처리에 의해 3$\times$2 주기성으로 환원되는 것으로 미루어 Si(113)3$\times$2 표면의 3$\times$1으로의 초기 상전이가 실리콘 표면의 흡착자에 의해서 형성된 것이 아니며 기판 자체의 재배열과 관련되어 있음을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.323-326
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• 2000

In this study, we used Brewster-Angle Microscope(BAM) to study on the molecular orientation of monolayer on the water surface. The behaviors of molecules on three different subphase have been observed. Reproducible $\pi$-A isotherm have been obtained only on information about phase transition by molecular area. BAM facilitates the observation of morphology by optical anisotropy and thickness in monolayer and multilayers as BAM is shown to be sensitive to anisotropy of film. Every transition was found by BAM technique, either as a dramatic change in degree of contrast or as a sudden alteration of molecular action and $\pi$-A isotherm.

• 한국재료학회지
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• 제14권10호
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• pp.683-687
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• 2004

The BON thin films were grown on the Si substrate by the RF-PECVD method. When stored at the room temperature, the phase separation or transition of BON thin films occurred on the surface, due to the hydrophilic property of BON. The oxidation of BON thin films occurred mainly by the evaporation of B, O and N. The oxidized BON thin films consisted of an amorphous phase and a bit of the polycrystalline phase.

• 한국세라믹학회지
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• 제28권1호
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• pp.29-36
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• 1991

Microporous glasses in the system TiO2-SiO2-Al2O3-B2O3-CaO-Na2O were prepared by the phase-separation technique. Morphology and distribution of pore and specific surface area of glasses heated and leached out at various conditions were investigated by SEM and Porosimeter. Crystallization of glasses heated above transition temperature was also inspected by X-ray diffraction method. When the heating temperature and time increased, the pore size and volume increased, but the specific surface area decreased above the critical temperature. The phase-separation, specific surface area and pore size showed more sensitive change on the variation of heating temperature than of heating time. The specific surface area and micropore volume of porous glasses prepared in this study were about 120-330$m^2$/g and 0.001-0.01cc/g, respectively. Mean pore size of porous glasses were about 20-90$\AA$. Anatase phases was deposited when the parent glass was heat-treated at 75$0^{\circ}C$ for 6hrs.

• 한국재료학회지
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• 제1권2호
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• pp.93-98
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• 1991

The as-grown $YBa_2Cu_3O_{7-x}$ superconducting thin films on MgO(100) substrate have been prepared by a reactive coevaporation method. The superconducting transition temperature, surface morphology and crystalline quality were examined as a function of the substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$. From the reflection high energy electron diffraction (RHEED) analysis, it was found the film consisted of almost amorphous phase with a halo pattern deposited at the substrate temperature of $450^{\circ}C$. The film deposited at the substrate temperature of $510^{\circ}C$ consisted of polycrystalline phase, showing a broad ring pattern. On the other hand, for the film deposited at $590^{\circ}C$, RHEED showed spotty pattern indicating that this film consisted of single crystal phase. It has rough film surface due to the surface outgrowth. The surface outgrowth increased as the substrate temperature increased from $510^{\circ}C$ to $590^{\circ}C$. the surface outgrowth may be due to the anisotropic growth rate. The highest transition temperature obtained in this study was $Tc_{zero}$ of 83K with $Tc_{onset}$ of 88K for the film deposited at $590^{\circ}C$ using activated RF oxygen plasma.

• 한국재료학회지
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• 제4권1호
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• pp.107-112
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• 1994

초청정 실리콘 기판위에 동시증착(codeposition)하여 형성된 Ti silicide의 상전이와 표면 및 계면 형상을 조사하였다. UHV(UItra Highvaccum) 챔버에서 200$\AA$Ti와 400$\AA$ Si을 400-$800^{\circ}C$로 가열한 실리콘 기판위에 동시증착하였다. XRD, SEM, TEM 으로 상전이와 계면 및 표면을 관찰하였다. 비교적 평편한 형상을 갖는 C49상은 $500^{\circ}C$와 $600^{\circ}C$에서 형성되었으며 응집화 현상은 관찰되지 않았다. $700^{\circ}C$에서 형성된 C54는 표면과 계면의 형상이 거칠어졌다. 기판의 온도가 $800^{\circ}C$로 증가할때 이런 현상은 더욱 뚜렷히 관찰되었다. $400^{\circ}C$와 $500^{\circ}C$에서 TiSi와 관련된 XRD peak가 관찰되었고, TEM사진에서 기판과 박막계면에 작은 결정들이 존재하는 것이 보이고 있다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.47-51
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• 2014

In this work, a possible mechanism for grain evolution in Al-Mg alloy films during thermal annealing is suggested on the basis of the phase transition and the related residual stress. Al-Mg alloy films with compositions of 14.0 and 18.0 wt% Mg content were deposited on cold-rolled steel substrates by the direct current co-sputtering method using Al and Mg targets. After the deposition, the samples were thermally annealed at $400^{\circ}C$ for 10 min. The featureless, dense cross-sectional microstructure of the as-deposited films turned into a grainy microstructure after the thermal annealing. According to the residual stress evaluated by using the $XRD-sin2{\psi}$ technique and the phase analysis by XRD, it is likely that grains were created in order to relieve the additional accumulation of residual stress originating from the phase transition from face-centered cubic Al (${\alpha}$) to Al3Mg2 (${\beta}$) and Mg (${\delta}$) phases, suggesting interplay between the microstructure and residual stress.