• 대한소아치과학회지
• /
• 제10권1호
• /
• pp.85-93
• /
• 1983

In one group that tested for the effects of grinding and etching on the deciduous teeth, S.E.M. examination on the ground or unground labial surface of deciduous maxillary central incisors were made after etching procedure with 40% phosphoric acid for 60 secs., 120 secs., 180 sees. each. In another group that tested for the degree of resin penetration to the ground and etched deciduous teeth, composite resin application was done to the ground deciduous maxillary central incisors that had been acid-etched for 30 secs., 60 secs., 90 sees., 120 sees., 180 secs. each. The tooth-resin specimens were cut at the middle 1/3 of the crown by 2mm thickness, and the adjacent tooth materials were demineralized by 10% hydrochloric acid, the author observed the tags of the resin replica with S.E.M.. Following results were obtained. 1. After 40% phosphoric acid etching, the unground deciduous enamel surface showed various types of etching pattern. 2. For the formation of regular micropores on deciduous enamel surface by acid etching with 40% phosphoric acid, the time over 120 secs. should be requested. 3. After 40% phosphoric acid etching, the ground deciduous enamel surface showed the same etching pattern that has been a preferential removal of prism peripheries despite different etching time. 4. On the ground group that etched over 60 secs. to 180 secs., the length of tags was $5{\mu}m$ to $8{\mu}m$, with a mean of $7{\mu}m$.

• 한국응용과학기술학회지
• /
• 제32권3호
• /
• pp.512-521
• /
• 2015

PCB 제조에서 photoresist와 Copper Clad Laminate(CCL)의 구리표면과의 부착력을 항상시키기 위하여 사용되는 soft etching제를 제조하기 위하여 과산화수소 사용을 배제하고, 유기산과 유기과산화물을 이용하여 산의 종류, 농도, 에칭시간 등에 따른 구리표면의 에칭속도, 표면 조도, 및 오염도 등을 조사하였다. 또한 에칭 후의 표면의 얼룩을 제거하기 위한 안정제의 최적 배합 및 농도도 확립하였다. 본 연구 결과 유기산의 종류 중에서는 아세트산이 초기 구리 에칭속도가 가장 빨랐으며, 농도가 0.04 M이었을 때 $0.4{\mu}m/min$이였다. 유기과산화물인 APS의 농도는 높을수록 에칭속도가 가장 빨랐으나, 표면 오염이 심각하였다. 안정제 용액의 조성도 표면 오염도에 큰 영향을 주었다. 결과적 0.04 M 아세트산, 0.1M APS에 4 g/L의 안정제(ST-1)를 첨가한 에칭액의 경우 $0.37{\mu}m/min$의 에칭속도와 표면오염이 전혀 없으며, 표면 조도도 가장 우수하였다. 즉, CCL과 photoresist와 접착력을 향상시킬 수 있을 것으로 판단된다.

• 구강회복응용과학지
• /
• 제23권4호
• /
• pp.269-281
• /
• 2007

Fluoric acid etching is an essential procedure in cementation of reinforced ceramics to tooth surface. But there have been few studies about the changes of surface structure and flexural strength of IPS $Empress^{(R)}$ 2 ceramic according to the etching time. The objectives of this study were to examine the surface structure changes and the difference in biaxial flexural strength of IPS $Empress^{(R)}$ 2 ceramic according to various etching times. Sixty one disk-shaped specimens of IPS $Empress^{(R)}$ 2 ceramic($14mm{\times}1.2mm$) were fabricated for the biaxial flexural strength test and SEM analysis according to the manufacturer's recommendations. Sixty specimens were divided into 6 groups(n=10) according to the time of HF acid etching(0, 20, 180 and 300s)and silane/resin cement application. Each disk was loaded using a piston-on-3 ball biaxial configuration in a universal testing machine. The failure loads(N) were recorded, and the biaxial flexural strength for each disk was calculated. A one-way analysis of variance and independent t-test on transformed fracture strength data were used to determine significant differences between groups. The groups of no cementation showed a trend toward progressive weakening with increasing the etching time. However, this was not statistically significant at p=0.05 level. The groups of resin cementation exhibited no apparent trend in their mean strength values. SEM photomicrographs showed very different results of etching. Within the conditions of this study, alteration of surface topography by acid etching does not have a deleterious effect on the biaxial flexural strength of IPS $Empress^{(R)}$ 2 ceramic.

• 한국결정성장학회지
• /
• 제24권5호
• /
• pp.196-201
• /
• 2014

화학적 습식 에칭을 통해 AlN와 GaN의 결함 및 표면 특성을 분석했다. 화학적 습식 에칭은 단결정의 결함을 선택적으로 에칭하기 때문에 결정의 품질을 평가하는 좋은 방법으로 주목 받고 있다. AlN와 GaN의 단결정은 NaOH/KOH 용융액을 이용하여 에칭을 했으며, 에칭 후 표면 특성을 알아보기 위해 주사전자현미경(SEM)과 원자힘 현미경(AFM)을 촬영했다. 에치 핏의 깊이를 측정하여 표면에 따른 에칭 속도를 계산했다. 그 결과 AlN와 GaN 표면에는 두 개의 다른 형태에 에치 핏이 형성 되었다. (0001)면의 metal-face(Al, Ga)는 육각 추를 뒤집어 놓은 형태를 갖는 반면 N-face는 육각형 형태의 소구 모양(hillock structure)을 하고 있었다. 에칭 속도는 N-face가 metal-face(Al, Ga)보다 각 각 약 109배(AlN)와 5배 정도 빨랐다. 에칭이 진행되는 동안 에치 핏은 일정한 크기로 증가하다 서로 이웃한 에치 핏들과 합쳐지는 것으로 보여졌다. 또한 AlN와 GaN의 에칭 공정을 화학적 메커니즘을 통해 알아 보았는데, 수산화 이온($OH^-$)과 질소의 dangling bond에 영향을 받아 metal-face(Al, Ga)와 N-face가 선택적으로 에칭되는 것으로 추론되었다.

• 마이크로전자및패키징학회지
• /
• 제11권4호
• /
• pp.81-86
• /
• 2004

메가소닉파을 이용하여 KOH 용액에서의 실리콘 이방성 습식 식각의 특성들을 개선하기 위한 새로운 방법에 관한 연구를 하였다. P형 6인치 실리콘 웨이퍼를 메가소닉파를 이용한 상태와 이용하지 않은 상태에서 식각 실험을 각각 수행하여 식각 특성들을 비교하였다. 메가소닉파는 식각균일도, 표면 조도 등과 같은 습식 식각의 특성들을 개선시키는 것으로 나타났다. 메가소닉파를 이용했을 때 식각 균일도는 전체 웨이퍼 표면의 ${\pm}1\%$ 이하이며, 메가소닉파를 이용하지 않았을 때는 ${\pm}20\%$이상이다. 식각 공정에 사용한 초기의 실리콘웨이퍼의 제곱 평균 표면 조도($R_{rms}$)는 0.23 nm이다. 자기 진동과 초음파 진동을 이용한 식각에서의 평균 표면 조도는 각각 566 nm, 66 nm로 보고 되었지만, 메가소닉파를 이용하여 $37{\mu}m$ 깊이로 식각한 경우 평균 표면 조도가 1.7nm임을 실험을 통하여 검증하였다. 이러한 결과는 메가소닉파를 이용한 식각 방법이 식각 균일도, 표면 평균 조도 등과 같은 식각 특성들을 개선시키는데 효과적인 방법임을 알 수 있다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.416-417
• /
• 2005

In this study, we optimized the process of Si anisotropy etching by combing tetramethyl ammonium hydroxide (TMAH) etching process with ultrasonic wave technology. New ultrasonic TMAH etching apparatus was developed and it was used for fabricating a $20{\mu}m$ thick diaphragm for Si piezoresistive pressure sensors. Based on comparison study on etch rate and surface flatness, it was observed that the Si anisotropy etching methode with new ultrasonic TMAH etching apparatus (at 40 kHz/ 500 watt) was superior to conventional etching methods with TMAH or TMAH+ammonium persulfate(AP) solutions.

• 한국정밀공학회지
• /
• 제20권2호
• /
• pp.25-32
• /
• 2003

Molding properties of etched surface pattern are presented. Injection molding has given attention on improving dimensional accuracy and productivity. However, the molding of etched surface pattern on plastic parts is not researched relatively for its additional values, which can meet design function and customer's attraction. Specimens, whose surface patterns are made by print-type etching, are investigated. The molding properties of surface pattern are estimated with roughness deviation of surface pattern on part and mold. The etching properties are related to physical properties of plastic materials and surface roughness of etched pattern. Also, flow mark and gate location can give influence on surface pattern molding. The experimental result can contribute to good molding of surface pattern in injection molding.

• 한국진공학회지
• /
• 제6권S1호
• /
• pp.59-65
• /
• 1997

Efficient Si(100) etching by thermal H atoms at low substrate temperatures has been achieved. Gas-phase etching product $SiH_4$(g) upon H atom bombardment resulting from direct abstraction of $SiH_3$(a) by impinging H atoms was detected with a quadrupole mass spectrometer over the substrate temperature range of 105-408 K Facile depletion of all surface silyl ($SiH_3$) groups the dissociative adsorption product of disilane ($Si_2H_6$) at 105K from Si(100)2$\times$1 by D atoms and continuous regeneration and removal of $SiD_3$(a) were all consumed. These results provide direct evidence for efficient silicon surface etching by thermal hydrogen bombardment at cryogenic temperatures as low as 105K We attribute the high etching efficiency to the formation and stability of $SiH_3$(a) on Si(100) at lowered surface temperatures allowing the $SiH_3$(a) abstraction reaction by additional H atom to produce $SiH_4$((g).

• 소성∙가공
• /
• 제13권3호
• /
• pp.268-272
• /
• 2004

Transparent materials such as fused silica are widely utilized in optical and optoelectronics field because of its outstanding properties, such as transparency in a wide wavelength range, strong damage resistance for laser irradiation, and high thermal and chemical stability. In this study, we made a few micro patterns on the surface of fused silica plate using laser induced wet etching. KrF excimer laser was used as a light source. There were no burrs and micro cracks on the etched surface of fused silica and the flatness of the etched surface was fairly good. We investigated the influence of etchant upon the etch rate and quality in laser induced wet etching. Pyrene-acetone solution and toluene were used as etchant. In the side of etch rate, toluene solution was better than pyrene-acetone solution. But we made in wider range of energy density using pyrene-acetone solution. But pyrene-acetone solution gave us wider window of energy density for successful micro patterning.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2005년도 추계학술대회 논문집
• /
• pp.182-185
• /
• 2005

Indentation pattern and line pattern were machined on borosilicate(Pyrex 7740 glass) surface using the combination of mechanical machining by $Nanoi-indenter\circledR$ XP and HF wet etching, and a etch-mask effect of the affected layer of the nano-scratched and indented Pyrex 7740 glass surface was investigated. In this study, effects of indentation and scratch process with etching time on the morphologies of the indented and scratched surfaces after isotropic etching were investigated from an angle of deformation energies.