• 한국전기전자재료학회논문지
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• 제30권12호
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• pp.800-805
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• 2017

Randomly patterned and wet chemical etching processes were used to treat anti-glare of display cover glasses. The surface and optical properties of grain size and surface morphology controlled by randomly patterned etching and wet chemical solution etching were investigated. The surface morphology and roughness of the etched samples were examined using a spectrophotometer and a portable surface roughness (Ra) measuring instrument, respectively. The gloss caused by reflection from the glass surface was measured at $60^{\circ}$ using a gloss meter. The surface of the sample etched by the doctor-blade process was more uniform than that obtained from a screen pattern etching process at gel state etching process of the first step. The surface roughness obtained from the randomly patterned etching process depended greatly on the mesh size, which in turn affected the grain size and pattern formation. The surface morphology and gloss obtained by the etching process in the second step depended primarily on the mesh size of the gel state etching process of the first step. In our experimental range, the gloss increased on decreasing the grain size at a lower mesh size for the first step process and for longer reaction times for the second step process.

• 대한치과보철학회지
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• 제40권4호
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• pp.323-334
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• 2002

The purpose of this study is to investigate which current densities and etching times will result in an optimal etching depth and surface roughness when an Ni-Cr-Be alloy is etched with 30% perchloric acid($HClO_4$). For this study, observations were made by means of an optical three-dimensional surface roughness measuring machine and a scanning electron microscope. The etchings took place under the following conditions using current densities of $300mA/cm^2\;450mA/cm^2,\;600mA/cm^2$ and $750mA/cm^2$, and using etching time of three, five, six, seven and nine minutes. Under the conditions, the experiments reached the following conclusions. 1. When the current density is above $450mA/cm^2$ and the etching time is longer than five minutes, the etching depth increased as the current density and etching time increased. And the surface roughness was significantly influenced by the interaction of the current density and etching time. 2. Under the etching conditions of $600mA/cm^2$ and five minutes, the optimal etching depth for a resin cement space and the highest surface roughness for mechanical retention were obtained. The etching depth and surface roughness were $32.86{\mu}m$ and $7.90{\mu}m$, respectively. 3. Observations under the scanning electron microscope showed that both the corrosion at the grain boundary and the corrosion within the grain occurred on the etched surface. It was also observed that the corrosion at the grain boundary became more severe as the current density and etching time increased. In addition. at higher current densities and longer etching times general corrosion appeared.

• 대한치과보철학회지
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• 제38권2호
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• pp.178-190
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• 2000

The purpose of this study was to evaluate the surface roughness of Ni-Cr-Be alloy($Verabond^{(R)}$, Aalba Dent Inc., USA) according to electrolyte concentration and etching time. Total of 150 metal specimens ($12{\times}10{\times}1.5mm$) composed of 5 polisded specimens, 5 sandblasted specimens, 140 etched specimens were prepared. Etched groups were divided into 28 groups by the $HClO_4$ concentrations(10, 30, 50, 70%) and etching times(15, 30, 60, 120, 180, 240, 300 seconds). The mean surface roughness(Ra) and the etching depth were measured with Optical 3-dimensional surface roughness measuring machine(Accura 1500M, Intek Engineering Co., Korea) and observed under SEM. The results obtaind were as follows: 1. Surface roughness(Ra) and etching depth were affected by the order of etching time, electrolyte concentration, and their interaction(P<0.05). 2. Surface roughness(Ra) and etching depth were increased with etching time in 10%, 30% electrolyte concentrations, but they had no significant difference with etching time in 70% (P<0.05). 3. Surface roughness(Ra) and etching depth decreased in the order of 30, 10, 50, 70% electrolyte concentrations from 120 seconds etching time(P<0.05). 4. The remarkable morphologic changes in etched surface were observed along the grain boundaries in 15, 30 seconds of 10%, 30% concentrations and the morphologic changes could be denoted in the grains themselves as well as along the boundaries with the lapse of time. Even though the noticeable morphologic changes also took place in etched surface with 50% concentration, the degree of changes were less than that of changes with 10%, 30%. However, there were little morphologic changes with 70% concentration regardless of etching time. 5. Surface roughness(Ra) of sandblasting group with $50{\mu}m\;Al_2O_3$ had no significant difference with 30%-30 seconds etched group(P<0.05).

• 전기학회논문지
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• 제59권4호
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• pp.749-753
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• 2010

We investigated the haze and the surface roughness of textured Si substrates etched by $XeF_2$ etching system with the etching parameters of $XeF_2$ pressure, etching time, and etching cycle. Here the haze was obtained as a function of wavelength from the measured reflectance. The haze of textured Si substrates was strongly affected by the etching parameter of etching cycle. The surface roughness of textured Si substrates was calculated with the haze and the scalar scattering theory at the wavelength of 800 nm. Then, the surface roughness was compared with that measured by atomic force microscope. The surce roughness obtained by two methods was changed with the similar tendency n terms of $XeF_2$ etching conditions.

• 대한치과기공학회지
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• 제39권4호
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• pp.243-251
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• 2017

Purpose: The purpose of this study was to investigate the effects of etching by monitoring the etched surfaces and the shear bonding strength of resin and porcelain with etched zirconia. Methods: The CAD/CAM was used to produce 24 zirconia blocks in groups of six. The zirconia specimen surfaces were sandblasted, and they were then divided into 12 specimens with surface etching and 12 specimens without etching for the control group. 12 specimens of composite resin were bonded using a curing light, and 12 specimens of porcelain underwent vita porcelain build-up sintering and the shear bonding strength was measured using a universal testing system. The SEM photographs were taken in order to observe any differences in the surfaces before and after etching, and they were magnified by a factor of 8 in order to observe fractured surface types. Results: The results of the shear bonding strength measurements are as follows: For the composite resin tests, between zirconia and resin, the shear bonding strength of the control group (NZR) without surface etching was 4.68 Mpa and the experimental group (EZC) with surface etching was 9.65 Mpa, which is significantly higher. The crystal structure of the zirconia was confirmed to be different in observations of the surfaces before and after etching. Conclusion : In comparing the shear bonding strength of zirconia and composite resin, the effects of etching were found to be significant. The effects of surface etching were also observed in fractured surfaces between zirconia and porcelain. This is expected to be applicable to various prosthetics as surface etching on zirconia is used in clinics.

• Journal of Electrical Engineering and Technology
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• 제3권2호
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• pp.271-275
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• 2008

The MAM(Megasonic Agitated Module) has been fabricated for improving the characteristics of wet etching. The characteristics of the MAM are investigated during the wet etching with and without megasonic agitation in this paper. The adoption of the MAM has improved the characteristics of wet etching, such as the etch rate, etch uniformity, and surface roughness. Especially, the etching uniformity on the entire wafer was less than ${\pm}1%$ in both cases of Si and glass. Generally, the initial root-mean-square roughness($R_{rms}$) of the single crystal silicon was 0.23nm. Roughnesses of 566nm and 66nm have been achieved with magnetic stirring and ultrasonic agitation, respectively, by some researchers. In this paper, the roughness of the etched Si surface is less than 60 nm. Wet etching of silicon with megasonic agitation can maintain nearly the original surface roughness during etching. The results verified that megasonic agitation is an effective way to improve etching characteristics of the etch rate, etch uniformity, and surface roughness and that the developed micromachining system is suitable for the fabrication of devices with complex structures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.19-20
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• 2006

Two methods that can reduce reflectance in solar cells are surface texturing and anti-reflection coating. Wet chemical etching is a typical method that surface texturing of multi-crystalline silicon. Wet chemical etching methods are the acid texturization of saw damage on the surface of multi-crystalline silicon or double-step chemical etching after KOH saw damage removal too. These methods of surface texturing are realized by chemical etching in acid solutions HF-$HNO_3$-$H_2O$. In this solutions we can reduce reflectance spectra by simple process etching of multi-crystalline silicon surface. We have obtained reflectance of 27.19% m 400~1100nm from acidic chemical etching after KOH saw damage removal. This result is about 7% less than just saw damage removal substrate. The surface morphology observed by microscope and scanning electron microscopy (SEM).

• 한국염색가공학회지
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• 제8권2호
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• pp.56-63
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• 1996

Low-temperature plasma treatment or sputter etching is of interest as one of the techniques to modify polymer surface. In this study, poly(ethylene terephthalate)(PET), nylon 6 and cotton fabrics dyed three black dyes were subjected to low-temperature argon plasma and also sputter etching. In relation to bathochromic effect, the surface characteristics of the treated fabrics and films were investigated by means of critical surface tension, SEM and ESCA measurement. The depth of shade of fabrics more increased by the sputter etching technique than argon plasma treatment. Many microcraters on the fiber surface formed by the sputter etching resulted in increase of surface area of the fiber and wettability, but the hydrophobic group was increased by the results of ESCA analysis. In particular the change in reflective index of the fibers was much more effective than the chemical composition of the fiber surface on increasing of the depth of shade.

• 한국정밀공학회지
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• 제31권4호
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• pp.353-358
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• 2014

This paper reports a simple, yet effective 1-step surface modification method for stainless steel. Electrochemical etching in dilute Aqua Regia forms hierarchical micro and nanoscale structure on the surface. The surface becomes highly hydrophobic (${\sim}150^{\circ}$) as a result of the etching in terms of static contact angle (CA). However the liquid drops easily pinned on the surface because of high contact angle hysteresis (CAH), which is called a "petal effect": The petal effect occur because of gap between surface microstructures, despite of intrinsic hydrophobicity of the base material. The pore size and period of surface structure can be controlled by applied voltage during the etching. This method can be applied to wide variety of industrial demand for surface modification, while maintaining the advantageous anti-corrosion property of stainless steel.

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.194-197
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• 2013

We investigated the effect of etching time on the surface roughness, and electrical and optical properties of ZnO and 2 wt% Al-doped ZnO (AZO) films. The ZnO and AZO films were deposited on glass substrates by RF magnetron sputtering technique. The etching experiment was carried out using a solution of 5% HCl at room temperature. The surface roughness was characterized by Atomic Force Microscopy. The electrical property was measured by Hall measurement system and 4-point probe. The optical property was characterized by UV-vis spectroscopy. After the wet chemical etching, the surface textures were obtained on the surface of the ZnO and AZO films. With the increase of etching time, the surface roughness (RMS) of the films increased and the transmittance of the films was observed to decrease. For the AZO film, a low resistivity of $1.0{\times}10^{-3}\;{\Omega}{\cdot}cm$ was achieved even after the etching.