• Journal of Information Display
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• 제2권4호
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• 반도체디스플레이기술학회지
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• 제7권2호
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• pp.63-67
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• 2008

The MgO protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by ion beam assisted deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, oxygen neutral beam assisted deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in F/$F^+$ centers, crystal orientation, surface morphology of the MgO thin film, and the discharge characteristics of AC PDP. The lowest firing voltage $(V_f)$ and the highest secondary electron emission coefficient $(\gamma)$ were obtained when the neutral beam energy was 300 eV.

• 반도체디스플레이기술학회지
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• 제13권4호
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• pp.15-20
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• 2014

The fracture analysis of $SiN_x$ layers, which were deposited by low-temperature plasma enhanced chemical vapor deposition (LT-PECVD) and could be used for an encapsulation layer of a flexible organic light emitting display (OLED), was performed by an electrical method. The specimens of metal-insulator-metal (MIM) structure were prepared using Pt and ITO electrodes. We stressed MIM specimen mechanically by bending outward with a bending radius of 15mm repeatedly and measured leakage current through the top and bottom electrodes. We also observed the cracks, were generated on surface, by using optical microscope. Once the cracks were initiated, the leakage current started to flow. As the amount of cracks increased, the leakage current was also increased. By correlating the electrical leakage current in the MIM specimen with the bending times, the amount of cracks in the encapsulation layer, generated during the bending process, was quantitatively estimated and fracture behavior of the encapsulation layer was also closely investigated.

• 한국측량학회:학술대회논문집
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• 한국측량학회 2004년도 춘계학술발표회논문집
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• pp.309-312
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• 2004

In mountainous area with high relief, topography may cause cast shadows due to the blocking of direct solar radiation. Remote sensing images of these landscapes display reduced values of reflectance for shadowed areas compared to non-shadowed areas with similar surface cover characteristics. A variety of approaches are possible, though a common step in various active approaches is first to delineate the shadows using automated algorithm and digital surface model (or digital elevation model). This articles demonstrates a common confusion caused by cast shadows

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.602-604
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• 2004

NPB surface morphologies deposited on different temperature substrates were investigated using atomic force microscopy(AFM). It has been found that the NPB morphology turned from island morphology at high temperature(100$^{\circ}C$) to grain morphology at room temperature. To characterize the effect of NPB surface morphology, the devices with the structure of Glass/ITO/NPB/$Alq_3$/Al were fabricated using NPB films deposited at different substrate temperature and their performances were compared.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1061-1064
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• 2007

Thin Beam Excimer Laser Annealing is investigated as one possible process enabled by the variable concept of Thin Beam LTPS processing. The structure of the resulting p-Si material is analyzed in terms of grain size distribution, scaling with energy density and overlap, as well as average surface roughness. This process provides similar control and latitude as conventional excimer laser annealing, but reduced average surface roughness and the potential to be scaled to significant productivity levels.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1087-1090
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• 2008

Present research is devoted to the development of optical sheet intended to be used inside LCD Backlight unit in order to improve output axial Luminance. It deals with refractive by nature optical sheet having relief embossed top surface (microlenses array). Patterned reflecting layer can be coated on flat bottom surface.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.665-668
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• 2006

Sodium is a serious contamination in LTPS TFT process. It causes the abnormal characteristics of TFT in operation. Contaminated areas can be seen in SEM images, but EDX measurements do not have adequate sensitivity to confirm the presence of superficial sodium residues. We employed SIMS as a fast analysis method to map the non-uniform distribution of sodium on the surface. SIMS can also indicate the thickness of the contamination.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1465-1468
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• 2006

We developed a new ellipsometer for MURA detection. This ellipsometer can measure MURA along the slit line on the sample with high sensitivity, because this ellipsometer irradiates a slit beam onto the sample but can reject the reflected light from the back surface of the substrate. This ellipsometer is suitable for measuring MURA of the surface of sample with high sensitivity.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1273-1275
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• 2005

The influence of oxygen plasma and octadecyltrichlorosilane (OTS) treatment of $SiO_2$ on the patterning of poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT:PSS) is presented. A significant difference in surface energies between plasma treated and OTS treated $SiO_2$ was noted. Such heterogeneous surface energy guides PEDOT:PSS to wet and spread on the wettable region and to dewet and retract from other regions.