• Title/Summary/Keyword: surface display

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A Study on Processing of TFT Electrodes for Digital Signage Display using a Reverse Offset Printing (리버스옵셋 프린팅을 이용한 디지털 사이니지 디스플레이용 TFT 전극 형성 공정 연구)

  • Yoon, Sun Hong;Lee, Junsang;Lee, Seung Hyun;Lee, Bum-Joo;Shin, Jin-Koog
    • Journal of the Korean Society for Precision Engineering
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    • v.31 no.6
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    • pp.497-504
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    • 2014
  • The digital signage display is actively researched as the next generation of large FPD. To commercialize those digital signage display, the manufacturing cost must be downed with printing method instead of conventional photolithography. Here, we demonstrate a reverse offset printed TFT electrodes for the digital signage display. For the fabricated source/drain and gate electrode, we used Ag ink, silicone blanket, Clich$\acute{e}$ and reverse offset printer. We printed uniform TFT electrode patterns with narrow line width(10 ${\mu}m$ range) and thin thickness(nm range). In the end the printing source/drain and gate electrode are successfully achieved by optimization of experimental conditions such as Clich$\acute{e}$ surface treatment, ink coating process, delay time, off/set process and curing temperature. Also, we checked that the printing align accuracy was within 5 ${\mu}m$.

High-Density Hollow Cathode Plasma Etching for Field Emission Display Applications

  • Lee, Joon-Hoi;Lee, Wook-Jae;Choi, Man-Sub;Yi, Joon-Sin
    • Journal of Information Display
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    • v.2 no.4
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    • pp.1-7
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    • 2001
  • This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

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A Study on the Equipment of Neutral Beam Assisted Deposition for MgO Protective Layer of High Efficient AC PDP (고효율 AC PDP용 MgO 보호막 형성을 위한 중성빔 보조 증착 장비에 관한 연구)

  • Li, Zhao-Hui;Kwon, Sang-Jik
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.2
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    • pp.63-67
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    • 2008
  • The MgO protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by ion beam assisted deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, oxygen neutral beam assisted deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in F/$F^+$ centers, crystal orientation, surface morphology of the MgO thin film, and the discharge characteristics of AC PDP. The lowest firing voltage $(V_f)$ and the highest secondary electron emission coefficient $(\gamma)$ were obtained when the neutral beam energy was 300 eV.

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Fracture Analysis of a $SiN_x$ Encapsulation Layer for Flexible OLED using Electrical Methods (전기적 기법을 통한 플렉서블 OLED 봉지막의 파괴특성 연구)

  • Kim, Hyuk Jin;Oh, Seungha;Kim, Sungmin;Kim, Hyeong Joon
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.4
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    • pp.15-20
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    • 2014
  • The fracture analysis of $SiN_x$ layers, which were deposited by low-temperature plasma enhanced chemical vapor deposition (LT-PECVD) and could be used for an encapsulation layer of a flexible organic light emitting display (OLED), was performed by an electrical method. The specimens of metal-insulator-metal (MIM) structure were prepared using Pt and ITO electrodes. We stressed MIM specimen mechanically by bending outward with a bending radius of 15mm repeatedly and measured leakage current through the top and bottom electrodes. We also observed the cracks, were generated on surface, by using optical microscope. Once the cracks were initiated, the leakage current started to flow. As the amount of cracks increased, the leakage current was also increased. By correlating the electrical leakage current in the MIM specimen with the bending times, the amount of cracks in the encapsulation layer, generated during the bending process, was quantitatively estimated and fracture behavior of the encapsulation layer was also closely investigated.

Cast Shadow Extraction of Mountainous Terrain in Satellite Imagery (위성영상에서 산악지역의 그림자 추출)

  • 손홍규;윤공현;송영선
    • Proceedings of the Korean Society of Surveying, Geodesy, Photogrammetry, and Cartography Conference
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    • 2004.04a
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    • pp.309-312
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    • 2004
  • In mountainous area with high relief, topography may cause cast shadows due to the blocking of direct solar radiation. Remote sensing images of these landscapes display reduced values of reflectance for shadowed areas compared to non-shadowed areas with similar surface cover characteristics. A variety of approaches are possible, though a common step in various active approaches is first to delineate the shadows using automated algorithm and digital surface model (or digital elevation model). This articles demonstrates a common confusion caused by cast shadows

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The effect of NPB morphology on OLEDs optoelectronic characteristics

  • Jiang, Yurong;Xue, Wei
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.602-604
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    • 2004
  • NPB surface morphologies deposited on different temperature substrates were investigated using atomic force microscopy(AFM). It has been found that the NPB morphology turned from island morphology at high temperature(100$^{\circ}C$) to grain morphology at room temperature. To characterize the effect of NPB surface morphology, the devices with the structure of Glass/ITO/NPB/$Alq_3$/Al were fabricated using NPB films deposited at different substrate temperature and their performances were compared.

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Thin-Beam Excimer Laser Annealing

  • Ang, Woo Boon;Rothweiler, Dirk;Knowles, David
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1061-1064
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    • 2007
  • Thin Beam Excimer Laser Annealing is investigated as one possible process enabled by the variable concept of Thin Beam LTPS processing. The structure of the resulting p-Si material is analyzed in terms of grain size distribution, scaling with energy density and overlap, as well as average surface roughness. This process provides similar control and latitude as conventional excimer laser annealing, but reduced average surface roughness and the potential to be scaled to significant productivity levels.

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Development of Light Collecting Optical Sheet for LCD Backlight

  • Borysov, Illia;Chung, Kyu-Ha;Lee, Kyung-Joon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1087-1090
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    • 2008
  • Present research is devoted to the development of optical sheet intended to be used inside LCD Backlight unit in order to improve output axial Luminance. It deals with refractive by nature optical sheet having relief embossed top surface (microlenses array). Patterned reflecting layer can be coated on flat bottom surface.

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The application of rapid SIMS analysis for the identification of surface contamination in TFT-LCD manufacturing

  • Liou, Been-Chih;Chou, Yi-Hung;Chen, Chien-Chih;Eccles, John A.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.665-668
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    • 2006
  • Sodium is a serious contamination in LTPS TFT process. It causes the abnormal characteristics of TFT in operation. Contaminated areas can be seen in SEM images, but EDX measurements do not have adequate sensitivity to confirm the presence of superficial sodium residues. We employed SIMS as a fast analysis method to map the non-uniform distribution of sodium on the surface. SIMS can also indicate the thickness of the contamination.

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MURA Detection Method using a Slit-Beam-Profile Ellipsometer

  • Murai, Hideyuki;Ekawa, Koichi;Takashima, Jun;Naito, Hitoshi;Nakatsuka, Nobuo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1465-1468
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    • 2006
  • We developed a new ellipsometer for MURA detection. This ellipsometer can measure MURA along the slit line on the sample with high sensitivity, because this ellipsometer irradiates a slit beam onto the sample but can reject the reflected light from the back surface of the substrate. This ellipsometer is suitable for measuring MURA of the surface of sample with high sensitivity.

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