• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.90-93
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• 2002

In the surface pressure-area isotherms of mixed monolayers, mixtures containing as much as 30 mol% of AA form stable condensed monolayer while the monolayer without AA is in the expanded state because PVK take on 3D collapsed. All of the mixed monolayers with 0, 10, 20 and 30 mol% of AA could be readily transferred onto ITO substrate at 16, 17, 24 and 26 mN/m, respectively. The monolayer containing 30 mol% of AA, however, showed a roughness value of 28A and became homogeneous decreasing with the phase separation. We fabricated organic EL device of ITO/CuPc/MEL/BBOT/iLiF/Al using mixed monolayer of 13, 19 and 25 layer deposited by LB method as a emitting layer. In the voltage-current characteristics of EL device, current density was much smaller than that of the spin-coated devices. It may due to the large contact resistance existed at the interface of LB layer/organic layer inhibit carrier injection to the emitting layer. EL spectra of device showed peaks at 450. 470, 505, 555 and 650 nm and the white light emission indicate the CIE coordinate x=0.306, y=0.353.

• 한국재료학회지
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• 제15권5호
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• pp.293-300
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• 2005

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at $400^{\circ}C$. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are $2.69\times10cm^{-3}$ and $52.137cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, $E_g(T)=3.5128eV{\cdot}(9.51\times10^{-4}eV/K)T^2/(T+280K)$. After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of $V_{zn},\;V_o,\;Zn_{int},\;and\;O_{int}$ showned on PL spectrum are classified as a donors or accepters type. We confirm that $ZnO:Li/Al_2O_3$ in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.

• Progress in Superconductivity
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• 제12권2호
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• pp.99-103
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• 2011

We performed angle resolved photoelectron spectroscopy (ARPES) studies on Ru doped $BaFe_2As_2$ with various Ru contents. Ru, which is doped into a parent compound $BaFe_2As_2$ and substitute Fe, does not donate or accept electrons. However, it induces superconductivity. From ARPES data along the high symmetry cuts and Fermi surface maps, we investigate the electron correlation and carrier density at the Fermi level. We observe that the Fermi velocity increases with Ru doping, suggesting reduction in electron correlation. In addition, we address issues on local vs. itinerant pictures for the magnetism in $BaFe_2As_2$.

• 한국전기전자재료학회논문지
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• 제26권9호
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• pp.701-706
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• 2013

We have focused on the conversion efficiency of CIGS thin film solar cell prepared by co-evaporation method as well as the optimization of process condition. The total thickness of back electrode was fixed at 1 ${\mu}m$ and the structural, electric and optical properties of CIGS thin film were investigated by varying the thickness of Mo:Na bottom layer from 0 to 500 nm. From the experimental results, the content of Na was appeared as 0.28 atomic percent when the thickness of Mo:Na layer was 300 nm with compactly densified plate-shape surface morphology. From the XRD measurements, (112) plane was the strongest preferential orientation together with secondary (220) and (204) planes affecting to the crystallization. The lowest roughness and resistivity were 2.67 nm and 3.9 ${\Omega}{\cdot}cm$, respectively. In addition, very high carrier density and hole mobility were recorded. From the optimization of Mo:Na layer, we have achieved the conversion efficiency of 9.59 percent.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.242.2-242.2
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• 2014

Plasma-polymer thin films (PPTF) have been deposited on a Si(100) wafer and glass under several conditions such as different RF power by using plasma-enhanced chemical vapor deposition (PECVD) system. Ethylcyclohexane, ammonia gas, hydrogen and argon were utilized as organic precursor, doping gas, bubbler gas and carrier gases, respectively. PPTFs were grown up with RF (ratio frequency using 13.56 MHz) powers in the range of 20~60 watt. PPTFs were characterized by FT-IR (Fourier Transform Infrared), FE-SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope), Contact angle and Probe station. The result of FT-IR measurement showed that the PPTFs have high cross-link density nitrogen doping ratio was also changed with a RF power increasing. AFM and FE-SEM also showed that the PPTFs have smooth surface and thickness. Impedance analyzer was utilized for the measurements of C-V curves having different dielectric constant as RF power.

• 한국전기전자재료학회논문지
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• 제31권1호
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• pp.29-33
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• 2018

Using a vanadium dioxide ($VO_2$) source, highly pure and amorphous vanadium oxide (VO) thin films were deposited using an e-beam evaporator at room temperature and high vacuum (<$10^{-7}$ Torr). Then, by controlling the post-annealing conditions such as $N_2:O_2$ pressure ratio and annealing time, we could easily synthesize a homogeneous $VO_2$ thin film and also mixed-phase VO thin films, including $VO_2$, $V_2O_5$, $V_3O_7$, $V_5O_9$, and $V_6O_{13}$. The crystallinity and phase of these were characterized by X-ray diffraction, and the surface morphology by FE-SEM. Moreover, the electrical properties and ethanol sensing measurements of the VO thin films were analyzed as a function of temperature. In general, mixed-phases as a self-doping effect have enhanced electrical properties, with a high carrier density and an enhanced response to ethanol. In summary, we developed an easy, scalable, and reproducible fabrication process for VO thin films that is a promising candidate for many potential electrical and optical applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.160-162
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• 2003

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The substrate temperatures was $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}\;and\;299\;cm^2V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T\;+\;463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, Vo, $Zn_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type.

• 대한화장품학회지
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• 제30권3호
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• pp.295-305
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• 2004

콜로이드와 계면화학은 표면적과 표면에너지의 학문이다. 계면상의 위치에 따라서 분자밀도, 분자간의 상호작용력, 분자 배향성 그리고 반응성이 달라진다는 것은 흥미있는 주제가 되고 있다. 이러한 계면에너지가 중요하게 작용하는 시스템으로서 회합체, 에멀젼, 입자분산, 거품, 2차원적 표면이나 필름을 들 수 있다. 특히 나노 입자에 관련된 생체 적합성 재료를 사용하여 약물 전달체와 화장품 나노 소재로 이용하는데 관심이 고조되고 있다. 나노 입자는 수 nm에서 수백 nm 크기를 갖는, 넓은 표면적을 가진 콜로이드 상의 불균일 분산 입자의 일종이다. 지금까지 나노 입자의 제조, 특성 규명, 나노입자를 이용한 약물 봉입에 관한 연구가 활발히 이루어져 약물 전달체로서의 가능성이 충분히 입증되었다. 또한 난용성분 가용화 나노소재, 피부 흡수 증진용 나노소재, 자외선 차단용 나노소재, 안정화용 나노소재, 서방형 나노소재 등의 화장품 연구에 생체적합 나노전달체를 이용한 예가 보고되었다. 나노/마이크로 입자 시스템은 제조방법과 형태에 따라 나노/마이크로 스피어, 나노/마이크로 캡슐, 나노/마이크로 에멀젼, 폴리머 마이셀, 리포좀 등으로 구분된다. 수용액상에서 자기 회합체를 구성하는 나노수준의 폴리머 마이셀입자, 고농도, 고활성 물질에 대하여 농도 및 활성을 일정하게 제어할 수 있는 나노/마이크로 캡슐, 단일 이중층 또는 다층(100~800 nm)을 형성하여 여러 생리 환성 물질의 전달체로 이용되는 리포솜(liposome)에 대하여 제조방법과 산업의 응용에 대해 소개하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.139-139
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• 2010

Ionic Transition Metal Complex based (iTMC) Light-emitting electrochemical cells (LEECs) have been drawn attention for cheap and easy-to-fabricate light-emitting device. LEEC is one of the promising candidate for next generation display and solid-state lighting applications which can cover the defects of current commercial OLEDs like complicated fabrication process and strong work-function dependent sturucture. We have investigated the performance characteristics of LEECs based on poly (3, 4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS)-incorporated transition metal complex, which is tris(2, 2'-bipyridyl)ruthenium(II) hexafluorophosphate in this study. There are advantages using conductive polymer-incorporated luminous layer to prevent light disturbance and absorbance while light-emitting process between light-emitting layer and transparent electrode like ITO. The devices were fabricated as sandwiched structure and light-emitting layer was deposited approximately 40nm thickness by spin coating and aluminum electrode was deposited using thermal evaporation process under the vacuum condition (10-3Pa). Current density and light intensity were measured using optical spectrometer, and surface morphology changes of the luminous layer were observed using XRD and AFM varying contents of PEDOT:PSS in the Ruthenium(II) complex solution. To observe enhanced ionic conductivity of PEDOT:PSS and luminous layer, space-charge-limited-currents model was introduced and it showed that the performances and stability of LEECs were improved. Main discussions are the followings. First, relationship between film thickness and performance characteristics of device was considered. Secondly, light-emitting behavior when PEDOT:PSS layer on the ITO, as a buffer, was introduced to iTMC LEECs. Finally, electrical properties including carrier mobility, current density-voltage, light intensity-voltage, response time and turn-on voltages were investigated.