• Progress in Superconductivity and Cryogenics
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• v.9 no.1
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• pp.5-8
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• 2007

We have investigated the superconducting properties and surface morphology of $Sm_xBa_yCu_3O_{6+z}$ thin films deposited on LMO/IBAD-MgO/Hastelloy which prepared with different composition ratio by co-evaporation method(EDDC, Evaporation using Drum in Dual Chambers). We observed the composition ratio of SmBCO thin films by EDS analysis. We fabricated SmBCO thin film with critical current density of $1.5{\times}10^6A/cm^2$ at composition ratio of SM:Ba:Cu=1.10:2.01:3(at 77 K self-field). And, we confirmed that substitution of Sm-Ba did not occur at Cu rich phase by EDS analysis.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.10
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• pp.537-543
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• 1999

We fabricated a resistive superconducting fault current limiter (SFCL) of a meander type based on a YBCO film with the meander cross section of 5 $\times$ $10^{-6}$$cm^2$, and performed current limitation experiments. The film was coated quench current was 9.6 Apeak at 60 Hz, and the fast quench time was 0.63 msec. The resistance of the limiter continuously increased for three cycles dut to the temperature rise in the gold layer. The temperature of the current limiting element reached the room temperature in 11 msec, $150^{\circ}C$ in 54 msec after quench, and was saturated afterwards. For $45^{\circ}$and $90^{\circ}$faults the fast quench times were 0.56 msec and 0.26 msec, respectively. The quench time is believed to be reduced because the fault occurred when the current was either increasing or at the peak value. This limiter effectively limited the fault current to about 1/5 of the potential current with no SFCL right after the fault and to about 1/8.5 in three cycles. We confirmed that the gold layer effectively carried out the role of heat dissipation as the SFCL was quenched.

• Progress in Superconductivity
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• v.5 no.2
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• pp.105-108
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• 2004

We have studied effects of in-situ annealing on the fabrication of superconducting MgB$_2$ thin films prepared by rf magnetron co-sputtering. The Films were deposited on A1$_2$O$_3$ (1102) substrates at room temperature by using Mg and B targets. To trap remnant $O_2$ gas in the chamber, we used 20 mtorr Af sputter-gas balanced with 5 mol % of H$_2$ gas. To enhance adhesion to the substrate a thin layer of B was deposited prior to the codeposition of Mg and B. After completion of the film deposition, an additional Mg layer was deposited on top to compensate for Mg loss during the subsequent in-situ annealing. We have investigated the effects of two most important annealing parameters that are the Mg-to-B composition ratio and the annealing temperature. The range of the Mg-to-B composition ratio was from 0.42 to 0.85, and that of the annealing temperature was 500 $^{\circ}C$∼750 $^{\circ}C$. The Best result was obtained for the composition ratio of about 10% Mg excess from the stoichiometry and the annealing temperature of 700 $^{\circ}C$. Based on these results, we obtained films with T$_{c}$ : 36.5 K by further refining the fabrication process.s.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.536-539
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• 2007

BSCCO am films fabricated by using the evaporation method at various substrate temperatures, Tsub and ozone gas pressures $PO_3$. Despite setting the composition of thin film Bi2223, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$, and it was distributed in the rezone. The XRD peak of the generated film continuously changed according to the substrate temperature. This demonstrates the existence of mixed crystal composition where the phases of Bi2201, Bi2212 and Bi2223 are mixed in the crystal structure; and the single-phase film of each phase exist in a very rezone of temperature and gas pressure.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.221-224
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• 2002

Superconducting electrical devices are under development in a national project in Korea. And KEPCO and LGIS are in charge of development of a resistive type fault current limiters(FCLs) with YBCO thin films. In order to realize FCLs, the rated power of FCLs must be increased. For this purpose, it is of great interest to increase of allowed voltage of unit component without electrical and thermal damages. So, meander lines were widely used for the conducting path to increase maximum electric field. In this research, numerical simulations on the electromagnetic behaviors of the device were carried out, especially focusing on the effect of meander line structures on the YBCO thin films. To evaluate the structures of meander lines, three types of meander lines were considered for numerical analysis using finite element method (FEM). In this simulation, both normal state and fault conditions were considered for calculation of electric field, current density, magnetic field density. And the simulation resulted are compared to find the optimum design of meander lines for resistive FCLs.

• Progress in Superconductivity
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• v.6 no.1
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• pp.46-51
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• 2004

We fabricated a resistive type superconducting fault current limiter (SFCL) of 3-phase $6.6 kV_{rms}$ / rating, based on YBCO thin films grown on sapphire substrates with a diameter off inch. Each element of the SFCL was designed to have the rated voltage of $600 V_{rms}$ $/35A_{rms}$. The elements produced a single phase with 8${\times}$6 components connected in series and parallel. In addition, a NiCr shunt resistor of 23 $\Omega$ was connected in parallel to each of them for simultaneous quenches between the elements. Prior to investigating the performance of the 3 phase SFCL, we examined the quench characteristics for 8 elements connected in series. For all elements, simultaneous quenches and equal voltage distribution within 10% deviation from the average were obtained. Based on these results, performance of the SFCL for single line-to-ground faults was investigated. The SFCL successfully limited the fault current of $10 kA_{ rms}$ below 816 $A_{peak}$ within 0.12 msec right after the fault occurred. During the quench process, average temperature of all components did not exceed 250 K, and the SFCL was totally safe during the whole operation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1035-1040
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• 2003

High $T_{c}$ superconducting B $i_2$S $r_2$CaC $u_2$ $O_{8+d}$ (BSCCO2212) films were prepared by a metallorganic decomposition (MOD) method. The metal organic solution of BSCCO2212 was spin-coated on MgO (100) substrates at 3000 rpm for 1 min. To achieve a high critical current density, we controlled heat-treatment conditions and atmosphere. The films were annealed at temperature 75$0^{\circ}C$ ∼ 80$0^{\circ}C$ in $O_2$ or air. We obtained c-axis orientated BSCCO thin films on MgO substrates. The annealed sample at 77$0^{\circ}C$ with $O_2$ showed the critical temperature about 77 K and critical current denstity of 1.19 ${\times}$ 10$^{5}$ A/$\textrm{cm}^2$ about 13 K.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.193-196
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• 2000

A new type low-pass filter design method based on a coupled line and transmission line theory is proposed to suppress harmonics by attenuation poles in the stop band. The design formula are derived using the equivalent circuit of a coupled transmission line. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range and low insertion loss. The seventh-order low-pass filter designed by present method has a cutoff frequency of 0.9 CHz with a 0.01 dB ripple level. The coupled line type low-pass filter with strip line configuration was fabricated by using a high-temperature superconducting (HTS : YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on MgO(100) substrate. Since the HTS coupled tine type low-pass filter was proposed with five attenuation poles in stop band such as 1.8, 2.5, 4, 5.5, 6.2 GHz. The fabricated low-pass filter has improved the attenuation characteristics up to seven times of the cutoff frequency.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.873-875
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• 1999

We have fabricated good quality superconducting $YBa_{2}Cu_{3}O_{7-\delta}$ thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrate with $CeO_2$ and $BaTiO_3$ buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with YBCO. $CeO_2$ layer may be helpful for power transmission due to its conducting property. In order to enhance the crystallization of YBCO films on metallic substrates. we deposited $CeO_2$ and $BaTiO_3$ buffer layers at various temperatures. The YBCO superconducting tape fabricated with $BaTiO_3$ and $CeO_2$ buffer layers shows 85K of transition temperature and about $8.4{\times}10^4A/cm^2$ of critical current density at 77K.

• Progress in Superconductivity
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• v.14 no.1
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• pp.30-33
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• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.