• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1356-1361
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• 2004

High temperature superconducting coated conductor has a structure of ///. The buffer layer consists of multi-layer, this study reports the deposition method and optimal deposition conditions of YSZ(Yttria-stabilized zirconia) layer which plays a important part in preventing the elements of substrate from diffusing into the superconducting layer. YSZ layer was deposited by DC reactive sputtering technique using water vapor for oxidizing deposited elements on substrate. To investigate optimal thickness of YSZ film, four YSZ/CeO$_2$/Ni samples with different YSZ thickness(130 nm, 260 nm, 390 nm, and 650 nm) were prepared. The SEM image showed that the surface of YSZ layer was getting to be rougher as YSZ layer was getting thicker and the growth mode of YSZ layer was columnar grain growth. After CeO$_2$ layer was deposited with the same thickness of 18.3 nm on each four samples, YBCO layer was deposited by PLD method with the thickness of 300 nm. The critical currents of four samples were 0, 6 A, 7.5 A, and 5 A respectively. This shows that as YSZ layer is getting thicker, YSZ layer plays a good role as a diffusion barrier but the surface of YSZ layer is getting rougher.

• Progress in Superconductivity and Cryogenics
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• v.23 no.4
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• pp.1-5
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• 2021

Among elemental metals, niobium (Nb) has the highest superconducting transition temperature (T_c) at ambient pressure. Thus, Nb films have been used in superconducting electronics and radio frequency cavity applications. In this study, the depositional factors determining the crystallinity and T_c of Nb films were investigated. An Nb film grown at a sputtering temperature of 240℃ exhibited the maximum crystallinity of Nb and the minimum crystallinity of niobium oxide. X-ray photoelectron spectroscopy confirmed a maximum atomic percent of niobium and a minimum atomic percent of oxygen. A sputtering power of 210 W and a sputtering time of 50 min were the optimal conditions for Nb deposition, and the T_c of the optimized film (9.08 K) was close to that of bulk Nb (9.25 K). Transmission electron microscopy images of the thick film directly confirmed the removal of the typical in-plane compressive strain in the (110) plane caused by residual stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.353-355
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• 2004

YBaCuO thick films were fabricated by plasma enhanced chemical vapor deposition, and the crystallinity and the superconducting properties were investigated. The growth temperature to obtain the thick films was decreased by around $150^{\circ}C$ due to plasma enhancement. The zero resistivity temperatures for films grown at $590^{\circ}C$ and $620^{\circ}C$ were 55 and 80 K, resistively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.547-550
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• 2004

Superconducting fault current limiter(SFCL) is expected to be introduced into electric power system in future as an effective countermeasure for the increase of the short-circuit current due to the growth of the electric power system. SFCL has a merit that the fault current can be limited by the resistance generated when a superconductor transits from a superconducting state to a normal state without additional detecting device. In this paper, we investigated the resistance variance of resistive type SFCL and the fault current limiting characteristics due to the amplitude of source voltage. We could obtain the more effective fault current limiting characteristics of SFCL as the source voltage increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.523-526
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• 2004

According to the continuous demand for power and the growth of electric power utilities, the electric power transmission capacity was increased. The increase of the electric power transmission capacity results in an increase of the fault current level a fault happened. So the superconducting fault current limiter(SFCL) has been reached as the countermeasure for the reduction of the fault current. In this paper, we investigate the fault currents characteristics of resistive type SFCL according to fault angles when AC power source applied. As the fault angles increase, the first peak value of fault current decreased lower. On the other hand, the power burden of SFCL increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.208-211
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• 2002

$Bi_2Sr_2CuO_x$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.343-350
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• 2003

Using Bi$_2$Sr$_2$Ca$_2$.$_2$Cu$_3$ $O_{x}$ powders prepared by solid state reaction and spray drying method, the nucleation and growth behaviors of superconducting and second phases were investigated during isothermal heat treatment. When the spray drying power was used in contrast with solid state reaction powder, Bi$_2$Sr$_2$Ca$_2$.$_2$Cu$_3$ $O_{x}$ (2223) phase could be formed at the relatively shot time and second phases were much bigger. Quantitative analysis showed that as the heat treatment time increased, more Bi$_2$Sr$_2$Ca$_2$.$_2$Cu$_3$ $O_{x}$ (2212) changed to 2223 and the major second phase was changed from (Sr,Ca)$_{14}$Cu$_{24}$ $O_{x}$(14:24) to (Sr,Ca)$_2$Cu$_1$ $O_{x}$ (2:l). The superconducting phase formed at the relatively short time 14:24 phase. Following the Bi-free phase of 14:24 Phase, but long time was needed in places far from the 14:24 phase. Following the formation of the 2212 phase near the 14:24 phase, the 2223 phase nucleated preferentially at the interface between the 2212 and 14:24 phases. The preferential nuclcation of 2223 was explained by its structural similarity and low Interfacial energy with both the Bi-free and 2212 Phases.12 Phases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.333-336
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• 2021

Oxide YBCO bulk superconductors are manufactured using the melt process. Because seed crystal growth method utilizes a slow-spreading layer-by-layer reaction, a long-term heat treatment is required to manufacture a single-crystal specimen of several cm. In this study, the melt process method was applied to compensate for the shortcomings of the seed crystal growth method. The thickness of the upper and lower pellets of the YBCO bulk was molded to 40 mm, and YBCO superconductor was produced by heat treatment. The measurement results of capture magnetism was in line with the literature. This results in a relationship that the higher the growth of Y211 particle in the YBCO, the higher the superconducting properties. We analyzed the YBCO superconductor, focusing on the Y₂BaCuO₅ particle distribution.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.478-486
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• 1995

Cu/NbTi multilayer thin films and superconducting wires were fabricated and heat treated with conventional annealing and analyzed by differential scanning calorimetry (DSC) as a basic study for the enhancement of Jc. Interfacial reactions of Cu/NbTi multilayer thin films and superconducting wires were investigated with optical microscope, SEM, and XRD. According to the effective heat of formation (EHF) model, CU$\_$3/Ti was predicted as a first phase. However, considering the crystalline structure and thermodynamics, CuTi was predicted as a first phase. According to the results of DSC and XRD, CU$\_$2/Ti was found to be the first phase, followed by the formation Of CU$\_$4/Ti. The difference in first crystalline phase between the experimental result and the predicted one was discussed. In case of Cu/NbTi superconducting wires, the compounds formed at the Cu/NbTi interface grew with annealing time and the amount of compounds formed in Nb-47wt%Ti alloy was larger than that in Nb-50wt%Ti alloy. It seemed that the incubation time for the formation of compounds in Nb-50wt%Ti alloy was longer than that formed in Nb-47wt%Ti alloy. Also, the diffusion was the rate controlling step for the growth of compounds in all specimens. These compounds were formed at 500-600.deg. C for I hour annealing and, thus, the drawing time below I hour must be required to minimize the growth of compounds for the enhancement of Jc.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.45-48
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• 2003

BiSrCaCuO thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.