• 제목/요약/키워드: substrate thickness

검색결과 1,915건 처리시간 0.026초

사파이어 기판을 사용한 태양전지용 실리콘 박막의 저온액상 에피탁시에 관한 연구 (Low temperature growth of silicon thin film on sapphire substrate by liquid phase epitaxy for solar cell application)

  • Soo Hong Lee;Martin A. Green
    • 한국결정성장학회지
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    • 제4권2호
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    • pp.131-133
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    • 1994
  • $[0.5 \mu\textrm{m} (100) Si/(1102) sapphire]$ 기판상에 액상 에피탁시 방법으로 태양전지용 실리콘 박막형성을 시도하여, 평균 14 $\mu\textrm{m}$ 두께의 실리콘 박막을 아주 낮은 온도범위 $(380^{\circ}C~460^{\circ}C)$에서 성장시켰다.

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Effect of hydrogen plasma treatment on the photoconductivity of free-standing diamond film

  • Kim, Sung-Hoon
    • 한국결정성장학회지
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    • 제9권4호
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    • pp.441-445
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    • 1999
  • Thick diamond film having $~700\mu\textrm{m}$ thickness was deposited on polycrystalline molybdenum(Mo) substrate using high power (4 kW) microwave plasma-enhanced chemical vapor depostion (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconcuctivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

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졸겔법을 이용한 바륨페라이트 박막 제조 (Preparation of Barium Ferrite Thin Film by Sol-Gel Method)

  • 변태봉;조원덕;김태옥
    • 한국세라믹학회지
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    • 제34권1호
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    • pp.37-44
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    • 1997
  • 졸겔법중 딥코팅법을 이용하여 조성비 2Fe/Ba=5.25 졸로부터 바륨페라이트 박막을 제조하였다. 졸의 겔화과정은 4단계로 구분할 수 있으며, 8$0^{\circ}C$에서 90분간 반응시켜 제조한 졸이 코팅용 졸로서 가장 적합한 특성을 나타내었다. 박막층에 형성된 침상 형태의 입자들은 기판에 수평 하게 위치하고 있었으며, 박막 두께가 증가함에 따라 그 경향은 증가하였다. 침상형 입자의 자화용이축 방향은 장축 방향이었다.

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Nanocomposite Ni-CGO Synthesized by the Citric Method as a Substrate for Thin-film IT-SOFC

  • Wang, Zhenwei;Liu, Yu;Hashimoto, Shin-ichi;Mori, Masashi
    • 한국세라믹학회지
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    • 제45권12호
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    • pp.782-787
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    • 2008
  • Ni-ceria cermets have been extensively investigated as candidates for the anode in intermediate-temperature solid oxide fuel cells. We have used the citric method to synthesize nanocomposite powders consisting of NiO (Ni metal content: $40{\sim}60%$ by volume) highly dispersed in $Ce_{0.9}Gd_{0.1}O_{1.95}$ (CGO). The microstructure characteristics and sintering behaviors of the nanocomposites were investigated. No impurity phases were observed and the shrinkage of these substrates matched well with that of a CGO electrolyte with a specific surface area of $11\;m^2/g$. Densification of the CGO electrolyte layer to $<5\;{\mu}m$ thickness was achieved by co-firing the laminated electrolyte with the porous NiO-CGO substrate at $1400^{\circ}C$ for 6 h.

Opto-Electrical Study of Sol-Gel Derived Antimony Doped Tin Oxide Films on Glass

  • De, Arijit
    • Transactions on Electrical and Electronic Materials
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    • 제16권1호
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    • pp.5-9
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    • 2015
  • Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.

마그네슘 압출용 금형의 내마모성 향상을 위한 CrN, TiN 코팅 (CrN and TiN Coatings for the Wear Resistance of Extrusion Mold for Magnesium)

  • 이수영;김상호
    • 한국표면공학회지
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    • 제44권6호
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    • pp.233-238
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    • 2011
  • The friction and wear characteristics of CrN and TiN coatings on SKD61 which is mold material using for extrusion of AZ80 magnesium alloy were investigated. The coatings were deposited by the arc ion-plating method, and the thickness were about $3.59{\mu}m$ and $3.28{\mu}m$, respectively. Reciprocating friction wear tests were conducted by varying pin load and temperature of counter substrate at un-lubricated condition. The pin loads were 11, 15 and 19 kgf, and the substrate temperatures were room temperature and $120^{\circ}C$. CrN coating which has a lower friction coefficient and a smaller adhesive wear with AZ80 magnesium alloy showed better wear resistance than TiN coating.

TiN 박막의 탄소성 유한요소해석 (Elastic-Plastic Finite Element Analysis of TiN Thin Film)

  • 김정실;김석삼
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2001년도 제34회 추계학술대회 개최
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    • pp.331-340
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    • 2001
  • Elastic-Plasitc Finite element analysis is peformed about the TiN coated medium. The normal contact is simulated by a rigid asperity pressing the surface of an elastic-plastic half-surface. The case of a surface film stiffer than the substrate is considered, and general solutions for the subsurface stress and deformation fields are presented for several coating thickness. Additionally, the critical normal loads for deformation in the substrate and coating fracture are calculated when the yield of TiN film follows the Maximum Principal Stress Theory and Von Mises Theory. The results can be subsumed in failure maps for TiN thin film on steel.

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Double Textured AZO Film and Glass Substrate by Wet Etching Method for Solar Cell Application

  • 정원석;남상훈;부진효
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.594-594
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    • 2012
  • Al doped ZnO (AZO) thin films were deposited on textured glass substrate by magnetron sputtering method. Also, AZO films on textured glass were etched by hydrochloric acid (HCl). Average thickness of etched AZO films are 90 nm. We observed morphology of AZO film by AFM with various etchant concentration and etching time. Etched AZO films have low resistivity and high haze. The surface RMS roughness of AZO film was increased from 53.8 nm to 84.5 nm. The haze ratio was also enhanced in above 700 nm of wavelength due to light trapping effect was increased by rough AZO surface. The etched AZO films on textured glass are applicable to fabricate solar cell.

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Development of Coencapsulating Technology for the Production of Chitosanoligosaccharides

  • Lee, Ki-Sun;Chio, Myeong-Rak;Lim, Hyun-Soo
    • Biotechnology and Bioprocess Engineering:BBE
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    • 제5권5호
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    • pp.345-349
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    • 2000
  • To easily separate chitosanoligosaccharides by size exclusion, an coencapsulating technology of substrate and enzyme was developed. The membrane was composed of alginate and a divalent cation such as calcium. Chitosan and chitosanase were enveloped in this membrane and the product released to medium by size exclusion. The capsule was stabilized in a 2% acetic acid solution (pH 5.0) containing 0.145 M CaCO$_3$. The leakage of substrate caused by the agitation speed was controlled by increasing alginate and CaCO$_3$concentrations. The lower limit of the alginate concentration and the agitation speed were 0.5% and 49rpm, respectively. Membrane thickness and capsule diameter were 10$\mu\textrm{m}$ and 2.5mm, respectively. By TLC analysis, the composition of chitosanoligosaccharides were mainly 3-6 mers. The molecular weight distribution of the released oligosaccharides ranged from 262 to 3624 Da by GPC.

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스퍼터링 및 후 열처리 조건변화에 따른 SBN 강유전체 박막의 배향성에 관한 연구 (Effect of Sputtering and Post-Annealing Condition on The Orientation of SBN Thin Films)

  • 이채종;이희영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.133-135
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    • 2006
  • SBN60 and SBN60/30 thin films were deposited by ion beam sputtering technique. Using the ceramic target of the same composition and Pt(100)/$TiO_2$/$SiO_2$/Si or Pt(111)/Ti/$SiO_2$/Si substrate, crystallization and orientation behavior as well as electric properties of the films were examined, Thickness was controlled to $3000{\AA}$ and the films were heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation and crystallization behavior were observed which showed the dependence on processing condition($O_2$/Ar ratio, substrate temp, annealing temp...).

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