• Journal of Magnetics
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• 제21권2호
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• pp.168-172
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• 2016

$BiMnO_3$ has been a promising candidate as a magnetoelectric multiferroic while there have been many controversial reports on its ferroelectricity. The detailed analysis of its film growth, especially the growth of thin film having monoclinic symmetry has not been reported. We studied the effect of miscut angle, the substrate surface, and film thickness on the symmetry of $BiMnO_3$ thin film. A flat $SrTiO_3$ (110) substrate resulted in a thin film with three domains of $BiMnO_3$ and 1 degree miscut in the $SrTiO_3$ (110) substrate resulted in dominant domain preference in the $BiMnO_3$ thin film. The larger miscut resulted in a nearly perfect detwinned $BiMnO_3$ film with a monoclinic phase. This strong power of domain selection due to the step edge of the substrate was efficient even for the thicker film which showed a rather relaxed growth behavior along the $SrTiO_3$ [1-10] direction.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1440-1441
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• 2006

In this study, we synthesized CNTs(carbon nanotubes) on the glass substrate by microwave plasma enhanced chemical vapor deposition (MPECVD), Effect of bias voltage on the grown behavior and morphology of CNTs were investigated. Recently, it has been proposed that aligned CNTs can also be achieved by the application of electric bias to the substrate during growth, the first time reported the bias effect such that the nanotube alignment occurred only when a positive bias was applied to the substrate whereas no aligned growth occurred under a negative bias and no tube growth was observed without bias. On the country, several researchers reported some different observations that aligned nanotubes could also be grown under negative substrate biases. This discrepancy as for the effect of positive and negative bias may indicate that the bias effect is not fully understood yet. The glass and Si wafers were first deposited with TiN buffer layer by r.f sputtering method, and then Ni catalyst same method, The thickness of TiN and Ni layer were 200 nm and 60 nm, respectively. The main process parameters include the substrate bias (0 to - 300 V), and deposition pressure (8 to 20 torr).

• Bulletin of the Korean Chemical Society
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• 제18권1호
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• pp.56-61
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• 1997

Lead zirconate titanate (PZT) thin fills were deposited onto the Pt/Ti/SiO2/Si substrate by the pulsed laser deposition with the second harmonic wavelength (532 nm) of Nd:YAG laser. In order to determine the optimum conditions for the film deposition, the phase of the films were investigated as functions of ambient oxygen pressure, substrate temperature, and laser fluence. Also the chemical composition analysis was conducted for the PZT films deposited under various ambient oxygen pressure. When the distance between substrate and bulk PZT target is set to 20 mm, the optimum conditions have been determined to be 3 torr of oxygen pressure, 1.5 J/cm2 of laser fluence, and 823-848(±10) K range of substrate temperature. At these conditions, perovskite phase PZT films were obtained on platinized silicon. The chemical composition of the films is very similar to that of PZT bulk target. The physical structure of the deposited films analyzed by scanning electron microscopy shows a columnar morphology perpendicular to the substrate surface. Capacitance-Voltage hysteresis loop measurements show also a typical characteristics of ferroelectric thin film. The dielectric constant is found to be 528 for the 0.48 μm thickness of PZT thin film.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.44-44
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• 2003

Growth mechanism of carbon nanotubes(CNTs) synthesized by chemical vapor deposition is abided by two growth modes. These growth modes are classified by the position of activated catalytic metal particle in the CNTs. Growth mode can be also affected by interaction between substrate and catalytic metal and induced energy such as thermal and plasma. We studied the reaction of catalytic metal to the substrate and growth mode of CNTs. Various substrates such as Si(100), graphite plate, coming glass, sapphire and AAO membrane are used to study the relation between catalytic metal and substrate in the synthesis of CNTs. For catalytic metal, thin film was deposited on various substrate via sputtering technique with a thickness of ∼20nm and magnetic fluids with none-sized particles were dispersed on AAO membrane. After laying process on AAO membrane, it was dried at 80$^{\circ}C$ for 8 hour. Synthesizing of CNTs was carried out at 900$^{\circ}C$ in NH3/C2H2 mixture gases flow for 10minutes.

• 대한전자공학회논문지TC
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• 제46권6호
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• pp.118-127
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• 2009

정사각형 기판의 크기가 패치 안테나의 방사 특성에 미치는 영향을 연구하기 위하여 마이크로스트립 패치 안테나를 제작하고 측정한 결과를 전산모의한 결과와 비교하였다. 전산모의한 방사 특성 결과와 측정한 방사 특성 결과가 잘 일치함을 볼 수 있었다. 기판의 크기가 패치 안테나의 공진 주파수와 대역폭에 미치는 영향은 작으나 방사패턴에 미치는 영향은 매우 큼을 볼 수 있었다. 기판 두께가 증가할수록 표면파의 발생이 증가하여 기판 크기에 따른 전방 방사 이득 변화 폭, 최대 방사가 일어나는 각도의 변화 폭과 방사패턴의 변화가 크게 발생한다. 기판 두께에 관계없이 기판 크기가 $0.8\;{\lambda}_0$ 일 때 전방방사 이득이 크고 전방방사와 후방방사 이득의 차이도 매우 크다.

• 대한기계학회논문집A
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• 제26권3호
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• pp.428-435
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• 2002

Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.

• 한국진공학회지
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• 제10권4호
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• pp.387-395
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• 2001

증착 조건에 따라 나타나는 폴리머상, 경질, 흑연상의 다이아몬드상 카본(DLC) 박막에서 두께 감소에 따른 탄성률의 변화거동을 구조적인 관점에서 살펴보았다. 실험에 사용된 박막은 r.f.-PACVD 장비를 이용하여 증착하였으며, 반응 가스로는 벤젠과 메탄을 사용하였다. 기판을 식각 과정을 통해 완전히 제거시켜 주기 때문에 다른 방법들과는 달리 기판의 영향 없이 박막만의 탄성률을 정확히 측정할 수 있는 free overhang 방법을 이용하여 DLC 박막의 biaxial elastic modulus를 측정하였다. 또한 Raman 분석을 이용하여 박막의 구조를 조사하였다. 박막이 폴리머상 혹은 흑연상인 경우 두께가 감소함에 따라 탄성률이 감소하는 것을 확인하였고, Ramanm spectrum의 G-peak 위치를 분석한 결과 그 원인은 폴리머상인 경우 증착 초기에 낮은 물성을 가지는 폴리머상의 박막이 형성되기 때문이며, 흑연상인 경우 증착 초기에 낮은 물성을 가지는 흑연상의 박막이 증착되기 때문이다. 반면에 경질의 박막에서는 두께에 상관없이 일정한 탄성률을 가지고 있었으며, 두께에 따른 박막의 구조적인 변화도 관찰되지 않았다.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.198-200
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• 2014

100 nm thick Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on polyethylene terephthalate (PET) and ZnO coated PET substrate and then the effect of the ZnO thickness on the optical and electrical properties of the GZO films was investigated. GZO single layer films had an optical transmittance of 83.7% in the visible wavelength region and a sheet resistance of $2.41{\Omega}/{\square}$, while the optical and electrical properties of the GZO/ZnO bi-layered films were influenced by the thickness of the ZnO buffer layer. GZO films with a 20 nm thick ZnO buffer layer showed a lower sheet resistance of $1.45{\Omega}/{\square}$ and an optical transmittance of 85.9%. As the thickness of ZnO buffer layer in GZO/ZnO bi-layered films increased, both the conductivity and optical transmittance in the visible wavelength region were increased. Based on the figure of merit (FOM), it can be concluded that the ZnO buffer layer effectively increases the optical and electrical performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• 한국재료학회지
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• 제30권10호
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• pp.558-565
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• 2020

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al³⁺ ions of relatively small ion radius are substituted for Zn²⁺ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al_2p and O_ll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 10¹⁹ cm^-3 of carrier concentration, 8.4 cm^-2/V·s of mobility and 1.2 × 10^-2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

• Korean Chemical Engineering Research
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• 제47권1호
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• pp.105-110
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• 2009

Indium zinc oxide($In_2O_3-ZnO$, IZO) 박막이 poly(ethylene terephthalate) 플렉시블 기판위에 rf 마그네트론 스퍼터링을 이용하여 $Ar/O_2$ 혼합 가스하에서 rf power, 공정압력 및 IZO 두께를 변화하여 증착되었다. 공정압력이 증가됨에 따라서 증착속도는 약간씩 증가되었고 투과도에는 거의 변화가 없었으나 저항도는 증가되었다. rf power의 증가에 대하여는 증착속도가 크게 증가하였고 투과도는 미소한 변화를 보였으며 저항도는 최저점을 보인 후에 증가하였다. 가장 낮은 저항을 보인 1 mTorr와 90 W의 공정조건에서 IZO 박막의 두께변화를 실시하여 최적의 두께를 찾고자 하였다. $1,500{\AA}$ 두께의 IZO 박막이 가장 낮은 저항도를 나타냈고 염료의 최대흡수 파장영역 주변에서 높은 투과도를 보였다. 두께가 다른 투명전극들을 이용하여 제조된 태양전지의 에너지 변환효율을 측정한 결과, $1,500{\AA}$ 두께의 IZO 전극을 사용한 셀에서 2.88%의 최대 변환효율을 보였다.