• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.131-133
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• 1994

Deposition of silicon on pretreated sapphire substrates has been investigated by the liquid phase epitaxy method at low temperatures. An average 14 $\mu\textrm{m}$ thickness of silicon was grown over a large area on sapphire substrate originally coated with a much thinner silicon layer $[0.5 \mu\textrm{m} (100) Si/(1102) sapphire]$ at low temperatures from $(380^{\circ}C to 460^{\circ}C)$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.441-445
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• 1999

Thick diamond film having $~700\mu\textrm{m}$ thickness was deposited on polycrystalline molybdenum(Mo) substrate using high power (4 kW) microwave plasma-enhanced chemical vapor depostion (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconcuctivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.37-44
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• 1997

Barium ferrite thin films on the thermal oxidized Si substrate were prepared by using sol-gel method (dip coating) from the sol of composition ratio of 5.25, designated by mole ratio 2Fe/Ba. The gelation process was largely divided into 4 step, and the sol prepared by reaction for 90 minutes at 8$0^{\circ}C$ was the suit-able for coating. Needle shaped particles formed on the coating layer were placed parallel to substrate and the inclination was increased with film thickness. The easy-direction of magnetization of needle shaped par-ticles was long-axis direction.

• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.782-787
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• 2008

Ni-ceria cermets have been extensively investigated as candidates for the anode in intermediate-temperature solid oxide fuel cells. We have used the citric method to synthesize nanocomposite powders consisting of NiO (Ni metal content: $40{\sim}60%$ by volume) highly dispersed in $Ce_{0.9}Gd_{0.1}O_{1.95}$ (CGO). The microstructure characteristics and sintering behaviors of the nanocomposites were investigated. No impurity phases were observed and the shrinkage of these substrates matched well with that of a CGO electrolyte with a specific surface area of $11\;m^2/g$. Densification of the CGO electrolyte layer to $<5\;{\mu}m$ thickness was achieved by co-firing the laminated electrolyte with the porous NiO-CGO substrate at $1400^{\circ}C$ for 6 h.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.5-9
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• 2015

Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.233-238
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• 2011

The friction and wear characteristics of CrN and TiN coatings on SKD61 which is mold material using for extrusion of AZ80 magnesium alloy were investigated. The coatings were deposited by the arc ion-plating method, and the thickness were about $3.59{\mu}m$ and $3.28{\mu}m$, respectively. Reciprocating friction wear tests were conducted by varying pin load and temperature of counter substrate at un-lubricated condition. The pin loads were 11, 15 and 19 kgf, and the substrate temperatures were room temperature and $120^{\circ}C$. CrN coating which has a lower friction coefficient and a smaller adhesive wear with AZ80 magnesium alloy showed better wear resistance than TiN coating.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.331-340
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• 2001

Elastic-Plasitc Finite element analysis is peformed about the TiN coated medium. The normal contact is simulated by a rigid asperity pressing the surface of an elastic-plastic half-surface. The case of a surface film stiffer than the substrate is considered, and general solutions for the subsurface stress and deformation fields are presented for several coating thickness. Additionally, the critical normal loads for deformation in the substrate and coating fracture are calculated when the yield of TiN film follows the Maximum Principal Stress Theory and Von Mises Theory. The results can be subsumed in failure maps for TiN thin film on steel.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.594-594
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• 2012

Al doped ZnO (AZO) thin films were deposited on textured glass substrate by magnetron sputtering method. Also, AZO films on textured glass were etched by hydrochloric acid (HCl). Average thickness of etched AZO films are 90 nm. We observed morphology of AZO film by AFM with various etchant concentration and etching time. Etched AZO films have low resistivity and high haze. The surface RMS roughness of AZO film was increased from 53.8 nm to 84.5 nm. The haze ratio was also enhanced in above 700 nm of wavelength due to light trapping effect was increased by rough AZO surface. The etched AZO films on textured glass are applicable to fabricate solar cell.

• Biotechnology and Bioprocess Engineering:BBE
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• v.5 no.5
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• pp.345-349
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• 2000

To easily separate chitosanoligosaccharides by size exclusion, an coencapsulating technology of substrate and enzyme was developed. The membrane was composed of alginate and a divalent cation such as calcium. Chitosan and chitosanase were enveloped in this membrane and the product released to medium by size exclusion. The capsule was stabilized in a 2% acetic acid solution (pH 5.0) containing 0.145 M CaCO$_3$. The leakage of substrate caused by the agitation speed was controlled by increasing alginate and CaCO$_3$concentrations. The lower limit of the alginate concentration and the agitation speed were 0.5% and 49rpm, respectively. Membrane thickness and capsule diameter were 10$\mu\textrm{m}$ and 2.5mm, respectively. By TLC analysis, the composition of chitosanoligosaccharides were mainly 3-6 mers. The molecular weight distribution of the released oligosaccharides ranged from 262 to 3624 Da by GPC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.133-135
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• 2006

SBN60 and SBN60/30 thin films were deposited by ion beam sputtering technique. Using the ceramic target of the same composition and Pt(100)/$TiO_2$/$SiO_2$/Si or Pt(111)/Ti/$SiO_2$/Si substrate, crystallization and orientation behavior as well as electric properties of the films were examined, Thickness was controlled to $3000{\AA}$ and the films were heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation and crystallization behavior were observed which showed the dependence on processing condition($O_2$/Ar ratio, substrate temp, annealing temp...).